6″Prime Silicon Wafer Thickness 1500±25μm

6″Prime Silicon Wafer Thickness 1500±25μm

PAM XIAMEN offers 6″Prime Silicon Wafer Thickness 1500±25μm.

Diameter 150mm
Thickness 1500±25μm
phosphorus, boron or Antimony doped boron,<100>
Resistivity 1-100ohm cm
with 200A thermal oxide and 1200A nitride
TTV < 15um
BOW < 80um

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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