6″ CZ Prime Wafer 1

PAM XIAMEN offers6″ CZ Prime Wafer 1

6 inch Prime CZ-Si wafer 6 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.5μm, <qty300
ttv ≤ 10um，warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008 certified and awarded honors from China General Administration of Quality Supervision, Inspection and Quarantine. We have owns and shares four modern factories, which can provide quite a big range of qualified products to meet different needs of our customers.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-09-20

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on growth rate, indium content, and surface [...]

2015-09-11meta-author gan freestanding substate, GaN substrate

LD Bare Bar for [email protected] 4mm

PAM XIAMEN offers LD Bare Bar for [email protected] 4mm. Brand: PAM-XIAMEN Wavelength: 940nm Filling Factor: 38% Output Power: 250W Cavity Length:4mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]

2019-05-09meta-author

Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers

Highlights •Effects of atomic step width on the removal of sapphire and SiC wafers are studied. •The reason of effects of step width on the removal and the model are discussed. •CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed. •The variations of atomic [...]

2015-10-28meta-author

2″CZ Prime Silicon Wafer-3

PAM XIAMEN offers 2″CZ Prime Silicon Wafer-3 Silicon wafer dia 2 inch thickness 280 um P type boron doped or N doped resistivity- 1-10 ohm cm orientation-100 For more information, send us email at [email protected] and [email protected]

2020-06-12meta-author

4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-4

PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM FZ DIAMETER 4’’ (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 400µm +/-25µm DSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 5000 – 10000 [...]

2019-07-05meta-author

Room Temperature Bonding of Wafers Using Si and Ge Films with Extremely Low Electrical Conductivity

The technical potential of room temperature bonding of wafers in vacuum using amorphous Si (a-Si) and Ge (a-Ge) films was studied. Transmission electron microscopy images revealed no interface corresponding to the original films surfaces for bonded a–Ge–a–Ge films. Analyses of film structure and the [...]

2019-12-09meta-author

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[email protected] [email protected]

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PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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6″ CZ Prime Wafer 1

6″ CZ Prime Wafer 1

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