PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[110]
2″
250
P/E
FZ ~50
PF<111> SF 134°
n-type Si:P
[110]
2″
900
P/E
FZ 50-100
1 F @ <111> only
n-type Si:P
[110]
2″
280
P/P
FZ 16-30
1 F @ <111> only
n-type Si:P
[110]
2″
1000
P/P
FZ 15-18
1 F @ <1,-1,0>
n-type Si:P
[100]
2″
300
P/P
FZ 1,000-1,600
SEMI Prime
n-type Si:P
[100]
2″
300
P/P
FZ 600-1,200
SEMI Prime,
n-type Si:P
[100]
2″
2000
P/E
FZ >600
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ >300
SEMI Prime,
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 20-70
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ 10-40
SEMI Prime
n-type [...]
2019-03-07meta-author
PAM-XIAMEN offers 850nm laser diode wafer, which is a SLD (superluminescent diode) structure. It can be used as the light source of fiber optic gyroscope. Super-luminescent diode is a kind of semiconductor optoelectronic devices between laser diodes (LDs) and light-emitting diodes (LEDs). More detail [...]
2019-03-13meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI Prime
p-type Si:B
[100]
3″
350
P/E/P
0.100-0.200
SEMI Prime
p-type Si:B
[100]
3″
400
P/P
0.015-0.016
SEMI Prime
p-type Si:B
[100]
3″
380
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
0.003-0.004
SEMI Prime
p-type Si:B
[100]
3″
100
P/P
0.0026-0.0030
SEMI Prime
p-type Si:B
[100]
3″
300
P/E
0.002-0.003
SEMI Prime
p-type Si:B
[100]
3″
525
P/E
0.0020-0.0027
SF @ 45°
p-type Si:B
[100]
3″
380
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[911]
3″
380
P/E
5-6
PF <110>
p-type Si:B
[111]
3″
380
P/E
18-21
SEMI Prime
p-type Si:B
[111]
3″
775
P/E
13-14
Prime, NO Flatst
p-type Si:B
[111]
3″
1000
P/E
10-20
Prime, NO Flatst
p-type Si:B
[111-4°]
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111]
3″
2000
P/P
8-9
SEMI Prime, Individual cst
p-type Si:B
[111]
3″
625
P/P
5-8
SEMI Prime
p-type Si:B
[111]
3″
2300
P/P
4-7
SEMI Prime, Individual [...]
2019-03-06meta-author
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2121
p-type Si:B
[110]
2″
380
P/P
FZ 130–160
1 F @ <111> only
PAM2122
p-type Si:B
[110]
2″
280
P/E
FZ 120–300
1 F @ <111> only
PAM2123
p-type Si:B
[100]
2″
300
P/P
FZ 400–1,000
Prime, NO Flats, hard cst
PAM2124
p-type Si:B
[100]
2″
300
P/E
FZ >50
SEMI Prime, 2Flats, hard cst
PAM2125
p-type Si:B
[111]
2″
300
P/E
FZ 730–1,050
SEMI Prime, [...]
2019-02-18meta-author
PAM-XIAMEN can provide AlGaN/GaN HEMT heterostructure, like GaN on SiC HEMT wafer, for more wafer parameter please read: https://www.powerwaywafer.com/gan-wafer/gan-hemt-epitaxial-wafer.html. Based on the strong polarization-induced effect and the huge energy band shift, the interface of the III-nitride heterostructure can form a strong quantum localized high-concentration [...]
2022-07-07meta-author
PAM XIAMEN offers 150-μm-gapped THz photoconductive antenna.
The types of terahertz photoconductive antennas prepared includes diope antenna,strip line antenna, bow-tie antenna and antenna array with different parameters. The antenna gaps are from 2 μm to 1 mm, and we also can make the antennas designed [...]
2019-03-07meta-author