Wafer Si CZ (100)
Dia 6” x Thickness 675µm
Type p doped B
Resistivity 1-20 ohm.cm
With one flat
One Side Polished or Double Side Polished
LPD’s < 50 @ 0.2um
TTV < 25µm
Bow < 60µm
Warp < 60µm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 37 p- Si:B 35±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 16.5 n- Si:P 12.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 13±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 7±1 n- Si:P 12±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 14.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 7 n- Si:P 12±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.002-0.005 P/E 88 p- Si:B 80.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.002-0.005 P/E 88 n- Si:P 27±10% P/N/N+ 4″Øx380μm n- Si:As[111] 0.002-0.005 P/E 105 p- Si:B 0.0035±10% P/N/N+ 4″Øx380μm n- Si:As[111] 0.002-0.005 P/E 26 n- Si:P 5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10.15 n- Si:P 3.8±0.5 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 6.8±0.8 n- Si:P 0.55±0.15 N/N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 16.5 n- Si:P 35 ±10% N/N+ 4″Øx508μm n- Si:As[111] 0.002-0.005 P/E 19±1.3 n- Si:P 25±5 N/N/N+ 4″Øx508μm n- Si:As[111] 0.002-0.005 P/E 54.5±3.6 n- Si:P 4.4 N/N/N+ 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 20 n- Si:P 270 ±10% N/N+ 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.09 ±10% N/N+ 4″Øx400μm n- [...]
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. 2 inch in diameter wafers Monocrystalline silicon with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 microns, Warping <35 microns For more information, please visit our website: [...]
Silicon epitaxy with Boron dopant in size 200mm from PAM-XIAMEN is available for semiconductor device fabrication. Silicon epitaxy growth is a surface treatment process for silicon wafers, which means that a single crystal film is superimposed on the polished wafer by chemical reaction or other [...]
Abstract Nanostructured surfaces can be broadly defined as substrates in which the typical features have dimensions in the range 1–100 nm (although the upper limit of 100 nm may be relaxed to greater sizes in some cases, depending on the material and the specific property being investigated). [...]
Highlights •Elaboration of a smooth 3C–SiC membrane on a SiC substrate. •Faceted surface for the (110) orientation but smoother for the (111) orientation. •Roughness of the 3C–SiC membrane limited to 9 nm for the (111) orientation. •New MEMS devices feasible. •The huge SiC properties could be entirely exploited. The cubic [...]
PAM XIAMEN offers KTaO3 Potassium Tantalate Crystal Substrates. Formula KTaO3 Point group m3m Cell parameters 0.3984nm Melting point 1352.2 ℃ Density 7.025 g/cm3 Mohs hardness 6 Growth method Czochralski method Refractive index [email protected], [email protected] Coefficient of thermal expansion 4.027 x 10-6/K Specific heat (temperature J/(K g) 0.378 Transparent bands (nm) 380~4000 Crystal orientation <100>, <110>, <111> Regular size 20x20x0.5mm, 10x10x0.5mm, 5x5x0.5mm, other sizes are available upon request For more information, please visit our website: [...]
