PAM XIAMEN offers 80+1mm FZ Si Ingot-3
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-19meta-author
PAM-XIAMEN offers (20-2-1) Plane Semi-insulating Freestanding GaN Substrate, which is semiconductor material for the development of iii-nitride device, microelectronic devices and optoelectronic devices. The following specification of free standing GaN crystal substrate is for sale.
1. Semi-insulating Freestanding GaN Substrate Specification
Item
PAM-FS-GAN(20-2-1)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front [...]
2020-09-02meta-author
PAM XIAMEN offers 2004nm laser diode wafers.
Available Center Wavelengths: 1970 nm – 2051 nm
Wavelength Tolerance: +/- 1nm
CW Output Power (typical): 3mW (out of fiber)
SMSR (typical): >40 dB
Optical Linewidth: < 1.5 MHz
Temperature Tuning Coefficient (typical): 0.1 nm/°C
Current Tuning Coefficient (typical): 12 pm/mA
Slope Efficiency (typical): 0.12 [...]
2019-03-13meta-author
PAM XIAMEN offers GGG single crystal.
Composition
GGG
YSGG
S-GGG(CaMgZr:GGG)
NGG
GYSGG
GSGG
Lattice constant
12.376 Å
12.426 Å
12.480 Å
12.505Å
12.507 Å
12.554 Å
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 oC
~1730 oC
~1730 oC
GGG, (111), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 2sp
GGG, (110), 5x5x0.5mm, 1sp
GGG (111), 10x10x0.5mm, 2sp
GGG, (111), 10x10x0.5mm, 1sp
GGG, [...]
2019-04-26meta-author
Monocrystalline Germanium (Ge) ingot is provided with P type by PAM-XIAMEN. Germanium crystal does not contain large-angle grain boundaries or twin crystals. It has a diamond-shaped crystal structure and is an important semiconductor material. According different applications, single crystal germanium ingot can be divided [...]
2021-10-08meta-author
PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate
A client of our recently requested a substrate that would help them with their research experiement.
“My experiment is to synthesize the novel magnesium biomaterials on the polyelectrolyte multilayer modified silicon wafer. The wafer would be similar with the [...]
2019-02-26meta-author