Wafer Si CZ (100)
Dia 6” x Thickness 675µm
Type p doped B
Resistivity 1-20 ohm.cm
With one flat
One Side Polished or Double Side Polished
LPD’s < 50 @ 0.2um
TTV < 25µm
Bow < 60µm
Warp < 60µm
Absorption coefficient of DSP silicon substrate changes with the wavelength:
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Coated Silicon wafer. Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,5x5x0.5mmSSP, R:1-20 ohm.cm Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm Nickel<111> Film (100nm) [...]
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PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 2,000-5,000 SEMI Prime, Lifetime>1,500μs n-type Si:P [111] ±1° 3″ 508 E/E FZ 182-196 SEMI Test, TTV<3μm Intrinsic Si:- [100] 3″ 300 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 300 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 380 P/E FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 380 P/E FZ >20,000 SEMI Test, unpolished side has stain Intrinsic Si:- [100] 3″ 380 P/E FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 500 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 500 P/P FZ >20,000 SEMI Prime, Front Side Prime, back side Test Intrinsic Si:- [100] 3″ 650 P/P FZ >10,000 SEMI Prime, with LM, TTV<2μm Intrinsic Si:- [100] 3″ 700 P/P FZ >10,000 Test, scratrches and stains. [...]
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PAM-XIAMEN has 4H SiC crystal for sale, which is for power electronic device and microwave power device. It has been found that there are over 250 polytypes of silicon carbide single crystal, but the most common polytypes are cubic close-packed 3C-SiC and hexagonal close-packed [...]
