PAM XIAMEN offers 6″CZ Si Wafer with low LPD
Wafer Si CZ (100)
Dia 6” x Thickness 675µm
Type p doped B
Resistivity 1-20 ohm.cm
With one flat
One Side Polished or Double Side Polished
LPD’s < 50 @ 0.2um
TTV < 25µm
Bow < 60µm
Warp < 60µm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers MoSe2 crystal. MoSe2 is a layered material with strong in-plane bonding and weak out-of-plane interactions. These interactions lead to exfoliation into two-dimensional layers of single unit cell thickness. In addition, MoSe2 have sizable bandgaps that change from indirect to direct in [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-2 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
THz Generation Process in LT-GaAs Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]
PAM XIAMEN offers La0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 on Nb:SrTiO3 . 20nmLa0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 films on Nb:SrTiO3 Substrate <100> 5x5x0.5 mm, 1sp ,wt 0.7% Specifications: Film: La0.7Sr0.3MnO3 (20nm) + PbZr0.2Ti0.8O3 (100nm) Substrate:Nb: SrTiO3 (100), wt 0.7% Size: 5x5x0.5mm, one side polished For more information, please visit our website: https://www.powerwaywafer.com, send us [...]
PAM XIAMEN offers 1″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 1″ 475 ±10 E/E FZ >500 {1,900-2,400} n-type Si:P [111] ±0.5° 1″ 280 P/P FZ 2,000-10,000 TTV<5μm Intrinsic Si:- [100] 1″ 320 P/E FZ >20,000 Prime Intrinsic Si:- [100] 1″ 500 P/E FZ >20,000 SEMI Prime Intrinsic Si:- [100] 1″ 160 P/P FZ >10,000 Prime, TTV<8μm Intrinsic Si:- [100] 0.5″ 12700 C/C FZ >10,000 a set of 4 rods sealed in polyehtylene foil Intrinsic Si:- [111] ±0.5° 1″ 500 P/P FZ >15,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 1″ 1000 P/E FZ 14,000-30,000 Cassettes of 7, 6, 6 wafers Intrinsic Si:- [111] ±2° 1″ 27870 C/C FZ >10,000 Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm p-type [...]
PAM XIAMEN offers ZnO/Au/Cr coated Si substrate. ZnO/Au/Cr coated Si substrate ,4″x0.525 mm,1sp P-type B-doped,(ZnO=150nm,Au=150nm,Cr=20-40nm) Silicon Wafer Specifications: Film: ZnO/Au/Cr coated Si substrate ,4″x0.525 mm,1sp P-type B-doped, ZnO =150 nm ,ZnO film: c-axis, medium (001) orientation Au/Cr film: highly (111) [...]
