Wafer Si CZ (100)
Dia 6” x Thickness 675µm
Type p doped B
Resistivity 1-20 ohm.cm
With one flat
One Side Polished or Double Side Polished
LPD’s < 50 @ 0.2um
TTV < 25µm
Bow < 60µm
Warp < 60µm
Absorption coefficient of DSP silicon substrate changes with the wavelength:
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There are three basic types of semiconductor materials: intrinsic semiconductors, extrinsic semiconductors, also known as impurity semiconductors. Both types of semiconductor materials can be supplied by PAM-XIAMEN. 1. What Is Intrinsic Semiconductor? Intrinsic semiconductor refers to a pure semiconductor that is completely free of impurities and [...]
Helium implantation-induced layer splitting of InP in combination with direct wafer bonding was utilized to achieve low temperature layer transfer of InP onto Si(1 0 0) substrates. InP(1 0 0) wafers with 4 inch diameter were implanted by 100 keV helium ions with a dose of 5 × 1016 cm−2. Then [...]
PAM XIAMEN offers high-quality Al2O3 (Sapphire). A-plane (11-20) Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 2 SP Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20),1 SP Al2O3 – Sapphire Wafer 10x5x0.5 mm , A plane (11-20), 1 SP Al2O3 – [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM CZ DIAMETER 4 inch (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 525µm +/-25µm SSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 8 – [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] ±0.5° 4″ 1000 P/E <0.01 SEMI Prime n-type Si:P [110] ±0.5° 4″ 525 P/P 20-80 SEMI Prime @ [111] – Secondary 70.5° CW from Primary n-type Si:P [110] ±0.5° 4″ 500 P/P 3-10 SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers n-type Si:P [110] ±0.3° 4″ 525 P/P 3-10 SEMI [...]
PAM XIAMEN offers ZnO/Pt/Ti coated Si wafer. ZnO/Pt/Ti coated Si wafer ,4″x0.525mm,1sp P-type B-doped,( ZnO=150nm ,Pt=150nm Ti=20-40nm) Silicon Wafer Specifications: Film: ZnO/Pt/Ti thin film on Si (100) (P-type) substrate ,4″x0.525mm,1sp ZnO=150nm, ZnO film: c-axis, medium (001) orientation Pt/Ti film: [...]
