PAM XIAMEN offers 6″ CZ Si Wafer
Wafer Si CZ (100)
Dia 6” x Thickness 675µm
Type p doped B
Resistivity 1-20 ohm.cm
With one flat
One Side Polished or Double Side Polished
LPD’s < 50 @ 0.2
TTV < 25µm
Bow < 60µm
Warp < 60µm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Livermore, CA and Tokyo (Marketwire) – Bridgelux Inc., a leading developer and promoter of LED lighting technologies and solutions, and Toshiba Corporation, a world-leading semiconductor manufacturer, today announced that Bridgelux and Toshiba have achieved the industry’s top class 8″ GaN on SiliconLED chip emitting [...]
This paper investigates the hydrogen plasma treatment effects on the interface of Au/CdZnTe contact. Hydrogen plasma with high energy is the smallest and lightest atomic mass, which is easy to enter into the crystal surface to fill the vacancy defects. The Au/CdZnTe samples were treated [...]
PAM XIAMEN offers4″ Silicon EPI Wafer-6 4″ Si epi wafer Structure： (Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate) Top layer intrinsic Si: Resistivity≥50Ωcm, Thickness 5μm, Residual carrier concentration<1×1014/cm3 Middle layer Phosphorus Doped： Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3), Thickness 20μm, Residual carrier concentration<2.1×1013/cm3 Layer with Ion Implantation: handled [...]
PAM XIAMEN offers CaF2. CaF2, (100), 10x10x 0.5 mm 2 Sides polished CaF2, (100), 10x10x 0.5 mm 1 Side polished CaF2, (100), 10x10x 1.0mm , 1 Side polished CaF2, (100), 10x10x 1.0mm , 2 Side polished CaF2, (111), 10x10x 0.5mm , 2 Side polished [...]
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]
PAM XIAMEN offers Gold Single Crystal & Substrate. PAM XIAMEN grows Gold single crystal along <111> direction upto 20 mm diameter by Modified bridgman method. The Gold single crystal subsrtae is cut from the Gold ingot and polished to 30A surface roughness. Au (Gold) [...]
