Wafer Si CZ (100)
Dia 6” x Thickness 675µm
Type p doped B
Resistivity 1-20 ohm.cm
With one flat
One Side Polished or Double Side Polished
LPD’s < 50 @ 0.2um
TTV < 25µm
Bow < 60µm
Warp < 60µm
Absoption coeffient of DSP silicon substrate changes with the wavelength:
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [211] ±0.5° 4″ 1,500 ±15 P/P 0.01-0.02 SEMI Prime, TTV<1μm n-type Si:Sb [211] ±0.5° 4″ 1600 C/C 0.01-0.02 SEMI Test, Wafers can be polished for additional fee n-type Si:P [111] 4″ 1200 P/P 35-85 SEMI Prime n-type Si:P [111] ±0.5° 4″ 1500 P/E >20 {24-29} SEMI Prime, TTV<5μm, in Empak cassettes of 2 wafers n-type Si:P [111] ±0.5° 4″ 250 P/E 18-25 SEMI Prime n-type Si:P [111] ±0.5° 4″ 500 P/P 11-15 SEMI Prime, Both-sides Epi Ready polished n-type Si:P [111] 4″ 280 P/E 1.3-2.7 SEMI Prime n-type Si:P [111] ±0.5° 4″ 280 P/E 1.3-2.7 SEMI Prime n-type [...]
PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers for 650V power switching device fabrication. Recently, PAM XIAMEN, a leading supplier of GaN epitaxial wafers, announced that it has successfully developed “6-inch silicon-on-silicon (GaN-on-Si) epitaxial wafers” and its 6 inch size is on [...]
PAM XIAMEN offers Photographic Film. Various Technical Parameters Max plotted area 24″*35″ Thickness 0.18mm Resolution 6000dpi、1200dpi、1600dpi、2500dpi Positioning accuracy ±10μm Repetitive accuracy ±3μm Min Critical Dimension 25μm at 6000 and 12000dpi 12μm at 16000 and 25000dpi CD Tolerance Control ±3μm or ±4μm Main application areas: LCD, PCB, VFD, BGA, FPC and other industries For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
A 6-inch MicroLink Devices high-efficiency, lightweight and flexible ELO IMM solar cell wafer. Credit: MicroLink Devices The U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) has entered into a license agreement with MicroLink Devices, Inc. (Niles, IL) to commercialize NREL’s patented inverted metamorphic [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -2 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:As [111-4°] ±0.5° 4″ 325 P/E 0.001-0.005 SEMI Prime, Back Surface: Sand blasted with LTO seal n-type Si:As [111-4°] ±0.5° 4″ 300 P/E 0.001-0.005 SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers n-type Si:As [111-2°] ±0.5° 4″ 400 P/EOx 0.001-0.004 {0.0018-0.0036} SEMI Prime, Epi edges, 0.5μm LTO n-type Si:As [111-4°] ±0.5° 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111] ±0.5° 4″ 1000 P/E 0.001-0.005 {0.0031-0.0040} SEMI Prime, TTV<4μm, [...]
