Wafer Si CZ (100)
Dia 6” x Thickness 675µm
Type p doped B
Resistivity 1-20 ohm.cm
With one flat
One Side Polished or Double Side Polished
LPD’s < 50 @ 0.2um
TTV < 25µm
Bow < 60µm
Warp < 60µm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 905nm laser diode wafers. Single stark 905nm pulse LD structures P+ GaAs P=0.5-2×1020, d~0.15μm P- AlGaAs cladding, d~1.0μm Undoped AlGaAs waveguide d~0.4μm Undoped GaInAs QW d~8nm, PL:890-900nm Undoped AlGaAs waveguide d~0.7μm N- AlGaAs cladding, d~1.2μm N GaAs, d~0.5μm 2” or 3” N GaAs substrate N=(0.6~4)×1018 d=350~625μm 15°off <111>A Two stark 905nm pulse LD structures P+ GaAs P=0.5-2×1020, d~0.15μm P- AlGaAs cladding, d~1.0μm Undoped AlGaAs waveguide d~0.4μm Undoped GaInAs QW d~8nm, PL:890-900nm Undoped AlGaAs waveguide d~0.7μm N- AlGaAs cladding, d~1.2μm N++GaAs/P++GaAs Tunnel junction P- AlGaAs cladding, d~1.0μm Undoped AlGaAs waveguide d~0.4μm Undoped GaInAs QW d~8nm, PL:890-900nm Undoped AlGaAs waveguide d~0.7μm N- AlGaAs cladding, d~1.2μm N GaAs, d~0.5μm 2” or 3” N GaAs substrate N=(0.6~4)×1018 d=350~625μm 15°off <111>A For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy [...]
Fully spectroscopic x/γ-ray imaging is now possible thanks to advances in the growth of wide-bandgap semiconductors. One of the most promising materials is cadmium zinc telluride (CdZnTe or CZT), which has been demonstrated in homeland security, medical imaging, astrophysics and industrial analysis applications. These [...]
PAM XIAMEN offers EU DOPED CALCIUM FLUORIDE EU: CAF2 CRYSTAL. To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote. Eu doped calcium fluoride, Eu: CaF2, is an excellent scintillation crystal. It has been widely used in low energy nuclear physics [...]
PAM XIAMEN offers LiF crystal. LiF (100) 10x10x1.0mm, 1SP LiF (100) 10x10x1.0mm, 2SP LiF (111) 10x10x1.0mm, 1SP LiF (111) 10x10x1.0mm, 2SP LiF (110) 10x10x1.0mm, 1SP” For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen [...]
High-power broad-area InGaNAs/GaAs quantum-well (QW) edge-emitting lasers on GaAs substrates in the 1200 nm range are reported. The epitaxial layers of the InGaNAs/GaAs QW laser wafers were grown on n+-GaAs substrates by using metal-organic chemical vapor deposition (MOCVD). The thickness of the InGaNAs/GaAs QW layers [...]
PAM XIAMEN offers 4″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[111]±0.5°, Ro > 10,000 Ohmcm, TTV<5μm, Bow<20μm, Warp<30μm, One-side-Epi-Ready-polished, back-side etched, SEMI Flats, Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our [...]
