With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]
2021-02-25meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-13
4″ CZ wafer, P type
Orientation: (100)±0.5
Type/Dopant; P/Boron
Resistivity: 1-5 Ω-cm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
Diameter: 100 mm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-24meta-author
Heteroepitaxial growth of 3C‐SiC on Si by chemical vapor deposition has been investigated using the precursor trimethylsilane. To optimize the growth process and to obtain high growth rates, we have investigated the effect of temperature and precursor flow rate on on‐axis Si(100) and off‐axis [...]
2020-01-20meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
PAM XIAMEN offers Single crystal LiGaO2.
LiGaO2 (001 ) 10x10x0.35mm, 2sp, with domain
LiGaO2 (001 ) 10x10x0.5mm, 1sp, with domain”
LiGaO2 (001 ) 10x10x0.5mm, 2sp
LiGaO2 (010 ) 10x10x0.5mm, 1sp,with doman
LiGaO2 (010 ) 10x10x0.5mm, 2sp
LiGaO2 (100 ) 10x10x0.5mm, 1sp,
LiGaO2 (100 ) [...]
2019-05-07meta-author