6″ CZ Silicon Wafer

PAM XIAMEN offers 6″ CZ Silicon Wafer

N Type/Arsenic doped
Orientation (100)
Thickness 625±15μm
Resistivity 0.002-0.004Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤10μm
TIR ≤5μm
STIR≤2μm (15mm*15mm)
Bow/Warp≤30μm
Front Side: Chemical Mechanical
Polished
Back side:
BSD Yes
Poly(Å) No
Oxide Back Seal(Å)5000±500 Å
Edge Oxide Strip(mm):0.8
Back side Laser Mark: No
Particle ≤10 @≥0.3㎛
METAL IMPURITIES:
≤ 2.5E10(Fe Cr Cu Ni)at/㎠
≤ 5E10(Al Zn K Na Ca)at/㎠

For more information, send us email at [email protected] and [email protected]

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8″CZ Prime Silicon Wafer-2

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5″ FZ Silicon wafers

PAM XIAMEN offers 5″ FZ Silicon wafers Silicon wafers, per SEMI Prime, P/P 5″Ø×240±10µm, FZ p-type Si:B[100]±0.5°, Ro=(240-280)Ohmcm, TTV<5µm, Bow<25µm, Warp<25µm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1000µs. For more information, send us email at [email protected] and [email protected]

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Electronic lifetime engineering using low-temperature GaAs in a quantum well structure

Electronic lifetime engineering using low-temperature GaAs in a quantum well structure Using an AlAs barrier, it is possible to confine the defects associated to the low temperature grown GaAs in a well-defined portion of the sample. We verified that a minimum thickness of about 5 nm [...]

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[email protected] [email protected]

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6″ CZ Silicon Wafer

6″ CZ Silicon Wafer

PAM XIAMEN offers 6″ CZ Silicon Wafer

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