PAM XIAMEN offers Single crystal CdS window.
CdS (0001) 5 mm X 5 mm x 0.5 mm , 1 Sides polished
CdS (0001) 5 mm X 5 mm x 0.5 mm , 2 Sides polished
CdS (0001) 5 mm x 5 mm x1.0 mm, [...]
2019-04-19meta-author
We investigated the effect of the thickness of a 3C-SiC buffer layer on the growth of GaN on a Si substrate. GaN samples with thicknesses of 2.0 and 4.5 µm were grown by metal organic vapor phase epitaxy. Islands were observed at the initial [...]
2018-08-14meta-author
PAM-XIAMEN offers (11-22) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(11-22)- N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author
PAM-XIAMEN offers A Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-17meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
100
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
100
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
100
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
100
N
Phos
CZ
-100
300-350
P/P
PRIME
100
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
100
N
Phos
CZ
-100
350-400
P/P
PRIME
100
N
Phos
CZ
-100
1-3
350-400
P/P
PRIME
100
N
As
CZ
-100
.001-.005
375-425
P/P
PRIME
100
N
Phos
CZ
-100
1-20
375-425
P/E
PRIME
100
N
Phos
CZ
-100
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
450-500
P/P
PRIME
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
PRIME
100
N
Phos
FZ
-100
>3000
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
500-550
P/E
PRIME
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
PRIME
100
N
Phos
FZ
-100
>3000
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[111-4°] ±0.5°
4″
325
P/E
0.001-0.005
SEMI Prime, Back Surface: Sand blasted with LTO seal
n-type Si:As
[111-4°] ±0.5°
4″
300
P/E
0.001-0.005
SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers
n-type Si:As
[111-2°] ±0.5°
4″
400
P/EOx
0.001-0.004 {0.0018-0.0036}
SEMI Prime, Epi edges, 0.5μm LTO
n-type Si:As
[111-4°] ±0.5°
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111] ±0.5°
4″
1000
P/E
0.001-0.005 {0.0031-0.0040}
SEMI Prime, TTV<4μm, [...]
2019-03-05meta-author