PAM XIAMEN offers BARIUM FLUORIDE BAF2 CRYSTAL.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Barium fluoride, BaF2, crystal has good transmittance over a wide spectrum range, from 150 nm to 12.5 um. It has been widely used [...]
2019-03-11meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide†
Published by:
Qiang Li ;Jun-Feng Wang [...]
2019-12-09meta-author
High purity undoped or Intrinsic SiC Epilayer on Silicon carbide substrate(PAM-191014-SIC) are offered, its carrier concentration is extremely low(for detail data, please consult our team: [email protected]) and its resistivity is high, semi-insulating. Some researchers use its property to study color centers in wide band-gap [...]
2020-03-10meta-author
PAM XIAMEN offers silicon wafers
Silicon Wafer Mobility Calculator
Indium Tim Oxide (ITO) – Float Zone Silicon – LiNbO3 – InGaAs – Nitride on Silicon – Aluminum – Silicon Carbide (SiC) – GaN on Sapphire
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
2019-02-25meta-author
Bulk GaN Crystal Grown by HVPE
We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor [...]
2012-10-16meta-author
GaAs / AlGaAs / GaAs epi wafer in the diameter of 2” or 4” is available. This GaAs epitaxial wafer is applicable for semiconductor microwave devices and microwave monolithic integrated circuits. Here comes the typical structure of gallium arsenide epi wafer, please see below:
1. GaAs Wafer Epitaxial Structures
Structure 1:
2”GaAs/AlGaAs/GaAs epi wafer
S.No
Parameters
Specifications
1
GaAs substrate layer [...]
