Silicon ingot, per SEMI, G 150.7±0.3mmØ
FZ p-type Si:B[110]±2.0°
Ro > 1,000 Ohmcm
Ground Ingot
NO Flats
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc
MCC Lifetime>1,000µs
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PAM XIAMEN offers MgO Magnesium Oxide Single Crystal. Applications of MgO single crystal substrates: Substrate for high temperature superconducting film formation, such as YBCO film (filter used for communication and space observation) Substrate for ferroelectric film formation, such as PZT film (infrared ray sensor used for [...]
PAM XIAMEN offers Nd2Ga5O12 single crystal. PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device. Composition (Cubic) GGG Gd3Ga5O12 YSGG Y3Sc2Ga3O5 S-GGG（CaMgZr：GGG） Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12 NGG Nd3Ga5O12 GYSGG Gd0.63Y2.37Sc2Ga3O12 GSGG Gd3Sc2Ga3O12 Lattice constant 12.376 Å 12.426 Å , 12.480 Å 12.505Å 12.507 Å , 12.554 Å , Diffraction（2θ） 51º7′ 50º44′ 50º43′ 50º41′ 50º40′ 50º22′ Melting Point ~1800 oC ~1877℃ ~1730 oC ~1550 [...]
PAM XIAMEN offers Silicon Carbide (SiC) Wafers and Crystals. PAM XIAMEN offers the best prices on the market for high-quality silicon carbide wafers and substrates up to six (6) inch diameter with both N type and Semi-insulating types. Our SiC wafers have been widely [...]
PAM XIAMEN offers InP Wafer. InP(100) InP (100) Sn-doped InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp InP (100)undoped InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp VGF InP (100) undoped, 2″ x 0.35 mm wafer, 1sp VGF InP (100) undoped, 2″ x [...]
The GaN lattice mismatch grown on silicon carbide substrates is low. The low lattice mismatch of gallium nitride on SiC wafers indicates that the lattices of layer 1 and layer 2 match each other. The better the match, the fewer defects, and the better the performance and lifetime [...]
Global and China GaAs-based Device Market Distinct from traditional silicon semiconductor, gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V semiconductor and is mainly used in handset RF front end like power amplifier (PA). In the 4G era, [...]
