Silicon ingot, per SEMI, G 150.7±0.3mmØ
FZ p-type Si:B[110]±2.0°
Ro > 1,000 Ohmcm
Ground Ingot
NO Flats
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc
MCC Lifetime>1,000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers LD Bare Bar for 808nm@cavity 2mm. Brand: PAM-XIAMEN Wavelength: 808nm Filling Factor: 38% Output Power: 100W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., [...]
Gallium nitride semiconductors GaN is a compound semiconductor on steroids! if you could make a 10 Watt part on GaAs at a particular frequency, you can probably make a 100 watt part on GaN right now. Gallium nitride is the future of microwave power amps, GaAs has exceeded its [...]
A Plane Si-GaN Freestanding GaN Substrate PAM-XIAMEN offers A Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN A-SI Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) > 10 6Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 4″ 500 P/P 1-100 SEMI Prime, TTV<1μm, With Lasermark n-type Si:P [100-4°] 4″ 525 P/E/P 1-10 SEMI Prime n-type Si:P [100] 4″ 600 P/P 1-100 SEMI Prime, TTV<2μm, Bow<20μm, Warp<30μm n-type Si:P [100] 4″ 1000 P/P 1-20 SEMI Prime n-type Si:P [100] 4″ 2500 P/P 1-100 SEMI Prime, Individual cst n-type Si:Sb [100] 4″ 450 P/E ~0.03 SEMI Prime n-type Si:Sb [100] 4″ 400 P/E ~0.02 SEMI Prime n-type Si:Sb [100] ±0.2° 4″ 250 P/P 0.01-0.05 SEMI Prime n-type Si:Sb [100] 4″ 310 ±15 P/P 0.010-0.025 SEMI Prime, TTV<1μm n-type Si:Sb [100] 4″ 600 P/E 0.01-0.03 Strange Flats n-type Si:Sb [100-4°] 4″ 1500 P/E/P 0.005-0.030 SEMI Prime n-type Si:Sb [100] 4″ 1500 P/E/P 0.001-0.030 SEMI Prime n-type Si:P [111] 4″ 1500 P/E >20 SEMI Prime n-type Si:P [111] 4″ 250 P/E 18-25 SEMI Prime n-type Si:P [111] 4″ 250 P/E 18-25 SEMI [...]
PAM XIAMEN offers ZnO Zinc Oxide Crystal Substrates. Main Parameters Crystal structure Hexagonal Lattice parameters a=3.252Å c=5.313 Å Density 5.7 g/cm3 Hardness 4（Mohs） Melting [...]
Instrinsic SiC Epilayer on Silicon carbide substrate(PAM-191014-SIC) High purity undoped or Instrinsic SiC Epilayer on Silicon carbide substrate are offered, its carrier concentration is extremely low(for detail data, please consult our team: tech@powerwaywafer.com) and its resistivity is high, semi-insulating. Some researchers use its property to [...]
