PAM XIAMEN offers 6″ FZ Silicon Ingot with Diameter 150.7±0.3mmØ
Silicon ingot, per SEMI, G 150.7±0.3mmØ
FZ p-type Si:B[110]±2.0°
Ro > 1,000 Ohmcm
Ground Ingot
NO Flats
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc
MCC Lifetime>1,000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Cadmium zinc telluride (CdZnTe) is now established as a popular choice of sensor for the detection of γ-rays and hard x-rays, leading to its adoption in security, medical and scientific applications. There are still many technical challenges involving the deposition of high-quality, uniform metal contacts [...]
Semi-insulating GaAs Substrate PAM190628-GAAS PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um. Specification of Semi-insulating GaAs Substrate Parameter Customer’sRequirements Guaranteed/Actual Values UOM GrowthMethod: VGF VGF — ConductType:. S-I-N S-I-N — Dopant: Undoped Undoped Diameter: 100.0±0.2 100.0±0.2 mm Orientation: (100)±0.30offtoward (110) (100)±0.30offtoward (110) — OFlocation/length: EJ|0-1-1|±0.50/32.5±1.0 EJ[0-1-1]±0.50/32.5±1.0 — IFlocation/length: EJ|0-11|±0.50/18.0±1.0 EJ[0-11|±0.50/18.0±1.0 — Resistivity: Min:0.6E8 Min:0.8E8 Max:2.4E8 ohm.cm Mobility: Min:4500 Min:4769 Max:6571 cm2/v.s EPD: Max:10000 Min:700 Max:700 /cm2 Thickness: 600±25 600±25 pm Bow: Max:4 Max:4 μm Warp: Max:5 Max:5 μm TTV: Max:3 Max:3 μm TIR:. Max:3 Max:3 pm LFPD: Max:1 Max:1 pm LTV: Max:1.5 Max:1.5 μm PLTV: >90@15mm*15mm >90@15mm*15mm % ParticalCount: <100/wafer(for particle>0.28um); Haze<5ppm <I00/wafer(for particle>0.28um); Haze<5ppm — EdgeRounding: 0.375 0.375 mmR Laser Marking: Backside Backside — SurfaceFinish- front: Polished Polished — SurfaceFinish -back: Polished Polished — What is the typical Carrier Concentration [...]
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