PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
300
P/P
FZ >150
SEMI Prime
n-type Si:P
[111]
2″
500
P/P
FZ 130-150
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ 125-210
SEMI Prime
n-type Si:P
[111]
2″
380
P/E
FZ 100-300
SEMI Prime
n-type Si:P
[111]
2″
450
P/P
FZ 100-230
Prime, NO Flats
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 80-100
SEMI Prime, in hard cst {as ingot to process}
n-type Si:P
[111]
2″
300
P/P
FZ 70-95
SEMI Prime
n-type Si:P
[111-1°]
2″
300
P/E
FZ 69-77
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ >60
SEMI Prime
n-type Si:P
[111]
2″
300
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 55-75
SEMI Prime, in hard cst {as ingot [...]
2019-03-07meta-author
PAM XIAMEN offers Single crystal GaTe Substrate.
Gallium(II) telluride, GaTe, is a chemical compound of gallium and tellurium. There is research interest in the structure and electronic properties of GaTe because of the possibility that it, or related compounds, may have applications in the [...]
2019-04-22meta-author
PAM XIAMEN offers 6″Prime Silicon Wafer Thickness 1500±25μm.
Diameter 150mm
Thickness 1500±25μm
phosphorus, boron or Antimony doped boron,<100>
SSP
Resistivity 1-100ohm cm
with 200A thermal oxide and 1200A nitride
TTV < 15um
BOW < 80um
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
PAM XIAMEN offers Cu – single crystal Substrates & Polycrystalline & Copper Foam.
1. General Properties for Single Crystal Copper
Symbol : Cu
Atomic Number: 29
Atomic Weight: 63.546(3
Crystal structure: FCC -Face centered cubic
Density: 8.96 g/cm3
Melting Point: 1357.77 K (1084.62 °C, 1984.32 °F) [...]
2019-05-08meta-author
Effect of annealing on the residual stress and strain distribution in CdZnTe wafers
The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction [...]
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[111-4°] ±0.5°
4″
325
P/E
0.001-0.005
SEMI Prime, Back Surface: Sand blasted with LTO seal
n-type Si:As
[111-4°] ±0.5°
4″
300
P/E
0.001-0.005
SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers
n-type Si:As
[111-2°] ±0.5°
4″
400
P/EOx
0.001-0.004 {0.0018-0.0036}
SEMI Prime, Epi edges, 0.5μm LTO
n-type Si:As
[111-4°] ±0.5°
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111] ±0.5°
4″
1000
P/E
0.001-0.005 {0.0031-0.0040}
SEMI Prime, TTV<4μm, [...]
2019-03-05meta-author