Highlights
•Fabrication scheme for heterogenous Si-to-InP circuits on wafer level is described.
•Wafer-to-wafer alignment accuracy better than 4–8 μm after bonding obtained.
•Interconnects with excellent performance up to 220 GHz demonstrated.
•Palladium barrier necessary when combining Al-based technology with gold based one.
Abstract
In order to benefit from the material [...]
MgO single crystal substrate-1
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in [...]
2019-05-13meta-author
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/P 4″{100.0±0.2}Ø×500±15µm,
FZ Intrinsic undoped Si:-[100]±0.5°,
Ro > 20,000 Ohmcm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-02meta-author
PAM-XIAMEN offers 950nm InGaAs quantum well laser diode wafers. In the application of optoelectronic devices, the InGaAs / GaAs strained quantum well (QW) structure is one of the research hotspots, and the emission band of the InGaAs / GaAs strained quantum well covers the [...]
2019-03-13meta-author
Effect of annealing on the residual stress and strain distribution in CdZnTe wafers
The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction [...]
An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample [...]