N Type/Phosphorus doped
Orientation (111)
Thickness 400±10μm
Resistivity 2000-5000Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤15μm
Bow/Warp ≤20μm
FLATNESS(FPD)≤5μm
Front Side: Chemical Mechanical
Polished
Back side: Damaged, with SiO2/Al2O3
Particle ≤10 @≥0.3㎛
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers high-quality Al2O3 (Sapphire). Al2O3(10-14) Al2O3- Sapphire Wafer, (10-14), 10x10x0.5mm, 1 SP Fearures: Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties. Wafer size: 10 [...]
Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films Silicon-on-insulator (SOI) wafers made by direct wafer bonding are widely used as starting substrates for microelectromechanical systems (MEMS) fabrication. Adding another layer next to the SiO2 SOI, or replacing it with another [...]
PAM XIAMEN offers 905nm laser diode wafers. 1. Specs of 905nm Laser Diode Wafer 1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS Layer Composition Thickness Concentration 13 P+ GaAs / / 12 P-AlGaAs cladding + waveguide d~1.6um / 11 Undoped GaInAs QW PL:880~900nm / / 10 N- AlGaAs cladding + waveguide / 9 N++ GaAs/P++ GaAs Tunnel junction / / 8 P- AlGaAs cladding + waveguide / 7 Undoped GaInAs QW PL：880~900nm / / 6 N- AlGaAs cladding [...]
The electrical characteristics of GaN p–n junctions grown on freestanding GaN substrates by metal–organic chemical vapor deposition were investigated. The current–voltage (I–V) characteristics of the GaN p–n diode showed relatively low values and, little temperature dependence of the reverse leakage current. The breakdown voltage [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100-6°] 4″ 525 P/E 1-100 SEMI Prime p-type Si:B [100] 4″ 350 P/E 0.08-0.12 SEMI Prime, TTV<5μm p-type Si:B [100-4°] ±0.5° 4″ 381 P/E 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 800 P/EP 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 3100 P/P CZ 0.006-0.009 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 525 P/E 0.0042-0.0047 SEMI Prime p-type Si:B [100] 4″ 150 ±15 P/P 0.001-0.005 SEMI Prime, TTV<2μm p-type Si:B [111-3°] 4″ 300 P/E 3-4 SEMI Prime p-type Si:B [111-3°] 4″ 400 P/E 0.015-0.018 SEMI Prime p-type Si:B [111] 4″ 525 P/E 0.005-0.006 SEMI Prime p-type Si:B [111-1.5°] 4″ 525 P/E 0.002-0.004 SEMI Prime p-type Si:B [111] 4″ 300 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] ±0.5° 4″ 525 P/P 20-80 SEMI Prime @ [111] – Secondary 70.5° [...]
PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure: 1. GaAs HEMT Epitaxial Wafer Structures Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer ( PAM200416-HEMT): [...]
