N Type/Phosphorus doped
Orientation (111)
Thickness 400±10μm
Resistivity 2000-5000Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤15μm
Bow/Warp ≤20μm
FLATNESS(FPD)≤5μm
Front Side: Chemical Mechanical
Polished
Back side: Damaged, with SiO2/Al2O3
Particle ≤10 @≥0.3㎛
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ). PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation. 10×10 mm substrates [...]
Highlights •The thickness of graphene grown on SiC was determined by AES depth profiling. •The AES depth profiling verified the presence of buffer layer on SiC. •The presence of unsaturated Si bonds in the buffer layer has been shown. •Using multipoint analysis thickness distribution of the graphene on [...]
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
Flexible semiconductor Ge thin film grown on mica by van der Waals epitaxy. The film experiences no degradation in its electrical properties even after repeated bending. Credit: Aaron Littlejohn, Rensselaer Polytechnic Institute Germanium, an elemental semiconductor, was the material of choice in the early history [...]
You can buy Highly Oriented Pyrolytic Graphite (HOPG) sheets from PAM-XIAMEN. HOPG is a relatively new form of high purity carbon and provides microscopists with a renewable and smooth surface. Unlike mica, HOPG is completely non-polar, and for samples where elemental analysis will also be done, [...]
PAM XIAMEN offers 6″ FZ Silicon Ignot. 6″ Silicon Ingot FY37b. 11.817Kg Silicon ingot, per SEMI, G 150.7±0.3mmØ, FZ Intrinsic undoped Si:-[100]±2.0°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, Length: 286mm For more information, please visit our website: [...]
