GQ56b Silicon wafers, per SEMI Prime, P/P 6″Ø×675±10µm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 10,000 Ohmcm,
Both-sides-polished, One SEMI Flat
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
In recent years, gallium nitride (GaN) is widely used in high-frequency, high-power microwave, millimeter wave devices, etc., because it has excellent performance of large band gap, high thermal conductivity, high electron saturation drift speed, and easy formation of heterostructures. At the same time, various fields have [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst p-type Si:B [100] 3″ 300 P/P 0.5-10.0 SEMI Prime, TTV<2μm, Empak cst p-type Si:B [100] 3″ 315 P/P 0.5-10.0 SEMI Prime, TTV<3μm p-type Si:B [100] 3″ 3,050 ±50 C/C >0.5 1Flat, Individual cst (can be ordered singly) p-type Si:B [100] 3″ 250 P/E 0.15-0.20 SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers p-type Si:B [100] 3″ 250 BROKEN 0.15-0.20 Broken wafers, in Epak cst p-type Si:B [100] 3″ 356 P/P 0.015-0.020 SEMI p-type Si:B [100-4° towards[110]] ±0.5° 3″ 230 P/E 0.01-0.02 SEMI Prime, TTV<5μm p-type Si:B [100] 3″ 300 P/E 0.01-0.02 SEMI Prime p-type [...]
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 675 um. 6” Silicon wafer Wafer Size : 6 inch Silicon Thickness : 675 um Both polishing Axial direction : <100> Type : P/B resistivity:1-100Ωcm For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
Monocrystalline silicon is widely used in microelectronic applications due to its low cost, mature manufacturing process, high carrier mobility, and long-term stability. And the growing silicon wafers applied in optoelectronic applications, such as photodetector, takes up a small portion. Monocrystalline silicon has a good [...]
Semi-insulating indium phosphide (formula: InP) wafer at prime grade for sale is dark gray crystal with a bandwidth (Eg=1.35 eV) at room temperature, a dissociation pressure of 2.75MPa at a melting point, an electron mobility of 4600cm2/(V·s), and a hole mobility of 150cm2/(V·s). PAM-XIAMEN [...]
Dependence of arsenic antisite defect concentration and two dimensional growth mode on LT GaAs growth conditions We investigated the dependence of Arsenic antisite defect concentration and that of epitaxial thickness (tepi), above which a transition to three dimensional growth appears, on the growth conditions of [...]
