PAM XIAMEN offers 6″ FZ Silicon Wafer-8
Diameter: 150 mm
N type
Orientation: (100)
Thickness: 675±10μm
Resistivity 6,000-10,000Ωcm
Double Side Polished
For more information, send us email at [email protected] and [email protected]
6″ FZ Silicon Wafer-8
Related Posts
PAM-XIAMEN Offers GaN on Sapphire substrate
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN on Sapphire substrate and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, [...]
2017-12-28meta-author
LiF crystal
PAM XIAMEN offers LiF crystal. LiF (100) 10x10x1.0mm, 1SP LiF (100) 10x10x1.0mm, 2SP LiF (111) 10x10x1.0mm, 1SP LiF (111) 10x10x1.0mm, 2SP LiF (110) 10x10x1.0mm, 1SP We also can offer LiF polycrystal (PAM161011-LIF): Diameter=15mm Length=25mm Purity>99.99% For more information, please contact us email at [email protected] and [email protected] Found in [...]
2019-05-08meta-author
Ge single crystal(Prime grade)-8
PAM XIAMEN offers 4″ Diameter Wafer. 4″ Diameter Wafer Ge N-type 4” ,undoped Ge Wafer (111) 4″ dia x 0.5 mm, 1SP, N type ( un- doped) Ge Wafer (100) . Undoped, 4″ dia x 0.5 mm, 1SP Ge Wafer (100) . Undoped, 4″ [...]
2019-04-25meta-author
4″ Silicon EPI Wafer-2
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 37 p- Si:B 35±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 16.5 n- Si:P 12.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 13±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 7±1 n- Si:P 12±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 14.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 7 n- Si:P 12±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.002-0.005 P/E 88 p- Si:B 80.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.002-0.005 P/E 88 n- Si:P 27±10% P/N/N+ 4″Øx380μm n- Si:As[111] 0.002-0.005 P/E 105 p- Si:B 0.0035±10% P/N/N+ 4″Øx380μm n- Si:As[111] 0.002-0.005 P/E 26 n- Si:P 5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10.15 n- Si:P 3.8±0.5 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 6.8±0.8 n- Si:P 0.55±0.15 N/N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 16.5 n- Si:P 35 ±10% N/N+ 4″Øx508μm n- Si:As[111] 0.002-0.005 P/E 19±1.3 n- Si:P 25±5 N/N/N+ 4″Øx508μm n- Si:As[111] 0.002-0.005 P/E 54.5±3.6 n- Si:P 4.4 N/N/N+ 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 20 n- Si:P 270 ±10% N/N+ 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.09 ±10% N/N+ 4″Øx400μm n- [...]
2019-03-08meta-author
100mm (4 Inch) Silicon Wafers-2
PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2383 n–type Si:P [111] ±0.5° 4″ 630 P/G FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground PAM2384 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers PAM2385 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ [...]
2019-02-19meta-author
WSe2 Crystal
PAM XIAMEN offers WSe2 Crystal. WSe2 (Tungsten Diselenide) is a very stable semiconductor in the group-VI transition metal dichalcogenides. WSe2 photoelectrodes are stable in both acidic and basic conditions, making them potentially useful in electrochemical solar cells. Also, the material can be changed from [...]
2019-05-21meta-author