Semi-insulating indium phosphide (formula: InP) wafer at prime grade for sale is dark gray crystal with a bandwidth (Eg=1.35 eV) at room temperature, a dissociation pressure of 2.75MPa at a melting point, an electron mobility of 4600cm2/(V·s), and a hole mobility of 150cm2/(V·s). PAM-XIAMEN [...]
2021-08-06meta-author
PAM XIAMEN offers Silver Single Crystal & Substrate.
PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A surface roughness.
PAM [...]
2019-05-08meta-author
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
PAM-XIAMEN offers GaN on SiC HEMT epitaxial wafer, which is HEMT stacks grown on semi insulation SiC for fabricating microwave RF devices, working on III-N material-growth and devices.
1. GaN on SiC HEMT Wafer for RF Application
No.1 GaN-on-SiC HEMT Epistructure
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
1300~2200 [...]
2019-05-17meta-author
Porous Silicon Wafer
PAM XIAMEN offers Porous Silicon Wafer.
The novel uses of porous silicon include powering sattelites and perhaps even space ships!
In the early 2000s scientists discoverd that hydrogenated porous silicon reacts explosively with oxygen at very low (cryogenic) temperatures. A porous silicon wafer in [...]
2019-02-15meta-author
PAM-P01(CZT Planar Detector) series are developed from CZT planar detector. Benefit from advanced CZT technology, we has developed CZT planar detectors with energy resolution<7% or 7%~10% @59.5keV under 25deg. for dose counting, spectrum acquisition and imaging for dosimeter, spectrometer and nuclear medicine.
CZT planar detector
1. [...]
2019-04-23meta-author