6″ FZ Silicon Wafer-8

PAM XIAMEN offers 6″ FZ Silicon Wafer-8

Diameter: 150 mm
N type
Orientation: (100)
Thickness: 675±10μm
Resistivity 6,000-10,000Ωcm
Double Side Polished

For more information, send us email at [email protected] and [email protected]

2021-03-19

Getting to 450 mm Wafer Soone

Getting to 450 mm Wafer Sooner As device circuits continue to get smaller, the wafers that they are made from are getting larger — again. A few years ago device manufacturers — both vertically integrated companies and independent foundries — pushed maximum wafer diameters from [...]

2013-03-14meta-author

4″ FZ Silicon Ingot with Diameter 100.7±0.3mm

PAM XIAMEN offers 4″ FZ Silicon Ingot with Diameter 100.7±0.3mm Si wafers Orientation (100) Dia 6” x thickness 500µm Type n or p 1-20 ohm.cm One side polished For more information, send us email at [email protected] and [email protected]

2020-05-27meta-author

Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP

Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]

2014-01-02meta-author LT-GaAs

LD Bare Bar for [email protected] 4mm

PAM XIAMEN offers LD Bare Bar for [email protected] 4mm. Brand: PAM-XIAMEN Wavelength: 940nm Filling Factor: 38% Output Power: 250W Cavity Length:4mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]

2019-05-09meta-author

6″ Prime Silicon Wafer Thickness 1mm

PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 1mm. 6” Silicon wafer Wafer Size : 6 inch Silicon Thickness : 1mm One side polishing Axial direction : <100> Type : P resistivity:1-100Ωcm no requirement for Particle For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-07-01meta-author

2″ FZ Intrinsic Si Wafer DSP

PAM XIAMEN offers 2″ FZ Intrinsic Si Wafer DSP 2″ FZ Intrinsic Si Wafer DSP 2″ FZ (100) intrinsic, DSP wafer Si FZ (100) dia 2’’ x 280µm intrinsic R > 20,000 ohm.cm 2 sides polished with SEMI Std flats Roughness<0.5nm For more information, [...]

2021-01-08meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

6″ FZ Silicon Wafer-8

6″ FZ Silicon Wafer-8

PAM XIAMEN offers 6″ FZ Silicon Wafer-8

Share this post

Related Posts

Getting to 450 mm Wafer Soone

4″ FZ Silicon Ingot with Diameter 100.7±0.3mm

Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP

LD Bare Bar for [email protected] 4mm

6″ Prime Silicon Wafer Thickness 1mm

2″ FZ Intrinsic Si Wafer DSP

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers