6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

PAM XIAMEN offers 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

6inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 152.4mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished
Back side: lapped-etched

For more information, send us email at [email protected] and [email protected]

2021-03-17

3″ Silicon Wafer-9

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Si 3″ P/P SEMI TEST (Unsealed)t Si 3″ P/P SEMI TEST (Unsealed)t n-type Si:P [100] ±0.1° 3″ 380 P/E FZ >5,000 SEMI Test, Bad Lasermark on back. To use with chuck light polish needed on back n-type Si:P [100] 3″ 381 P/P FZ 100-500 SEMI Prime n-type Si:P [111] 3″ 300 P/E FZ 61-95 Prime, NO Flatst Intrinsic Si:- [100] 3″ 300 P/P FZ >20,000 Prime, NO Flats, Individual cst Intrinsic Si:- [111] ±0.5° 3″ 1975 P/P FZ >20,000 Prime, NO Flats, Individual cst p-type Si:B [110] 3″ 380 P/E 1-10 1 F @ <1,-1,0> p-type Si:B [100] 3″ 380 P/P 80-170 SEMI Prime p-type Si:B [100] 3″ 300 P/P 30-35 SEMI Prime p-type Si:B [100] 3″ 200 P/E 10-20 SEMI [...]

2019-03-06meta-author

Ba1-xSrxTiO3 Film on (Pt/Ti/SiO2/Si)

PAM XIAMEN offers BaSrTiO3 Film on substrate. BaSrTiO3 Film ( 400nm) on Nb.SrTiO3(wt 0.7%), 10x10x0.5mm,1sp Ba1-xSrxTiO3 is an excellent enhanced dielectronic film grown on Nb doped SrTiO3 conductive substrate via special spin coating: Film Sppecifications: Chemical composition: BaSrTiO3 Film thickness: ~ 400 nm Crystalline: Polycrystal Growth [...]

2019-04-26meta-author

Freestanding GaN , Wafer Specification

Freestanding GaN , Wafer Specification https://www.powerwaywafer.com/freestadning-gan-substrate.html For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing [...]

2019-03-20meta-author

2″ Silicon Wafer-2

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 200 P/P FZ 500-1,000 SEMI, , in hard ccassettes of 4, 5 & 5 wafers n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, n-type Si:P [100] 2″ 225 P/P FZ >100 SEMI, , Individual cst, 1 very deep scratch n-type Si:P [100] 2″ 280 P/E FZ 60-90 SEMI Prime n-type Si:P [100] 2″ 150 P/P FZ 50-110 SEMI Prime, n-type Si:P [100] 2″ 280 P/P FZ 2-5 SEMI Prime n-type Si:P [111-3.5° towards[110]] ±0.5° 2″ 279 ±15 P/E FZ >2,000 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/P FZ 2,000-4,000 SEMI Prime, TTV<5μm, Both-sides Epi-Ready n-type Si:P [111] ±0.5° 2″ 280 P/P FZ 2,000-4,000 SEMI Prime, TTV<5μm n-type [...]

2019-03-07meta-author

Diamond on Silicon wafer

PAM-XIAMEN offers diamond on silicon wafer. Since diamond has a wide band gap, diamond thin films on silicon wafer, which is diamond epitaxial growth on silicon by MPCVD, is applied to wide band gap semiconductors, such as gas sensor devices, temperature sensor devices, radiation/infrared [...]

2019-04-19meta-author

Germanium (Ge) Window

Germanium (Ge) window is provided for infrared (IR) transmission. Ge window is not transparent for visible lingt and UV light while has a wide transmission range in infrared band. Infrared grade germanium single crystal is the basic material for making infrared lenses, infrared window [...]

2021-09-18meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

PAM XIAMEN offers 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

Share this post

Related Posts

3″ Silicon Wafer-9

Ba1-xSrxTiO3 Film on (Pt/Ti/SiO2/Si)

Freestanding GaN , Wafer Specification

2″ Silicon Wafer-2

Diamond on Silicon wafer

Germanium (Ge) Window

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers