6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

  • Home
  • News
  • 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

PAM XIAMEN offers 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

6inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 152.4mm
Polishing: one-sided for microelectronics 
Type of conductivity and alloying: not specified 
Surface orientation:  not specified 
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished 
Back side: lapped-etched

For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2021-03-17

Share this post

Related Posts

4″ Prime Silicon Wafer

PAM XIAMEN offers 4″ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×300±25µm, p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm, TTV<10µm, Bow<40µm, Warp<40µm, Both-sides-polished, SEMI Flats (two), Sealed in Empak cassette. Primary Flat: 32.5±-2.5, 110±1°。 Secondary Flat: 18±2，90°±5° For more information, please visit our website: https://www.powerwaywafer.com, send [...]

2019-07-02meta-author
Silicon Ingots -2

Silicon Ingots -2 PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!       All diameters! Note: Material – CZ unless noted Kg in Properties of Silicon Stock Silicon Ingots Material Description 19.35 FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm 5.6 FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm 5.12 6″Ø ingot [...]

2019-02-15meta-author
PbSe single crystal substrate

PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]

2019-05-14meta-author
New AlGaN/GaN HEMTs employing both a floating gate and a field plate

We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT [...]

2018-01-10meta-author
CZT α-ray Probe

CZT α-ray Probe PAM-01A1 series detectors are charged particles detector based on planar CZT crystal in a super small size. They have a high energy resolution in vacuum environment. PAM-01A1 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert α-ray into [...]

2019-04-24meta-author
Ceramic ALN SUBSTRATE-1

PAM XIAMEN offers Ceramic ALN SUBSTRATE. 100X100 Thickness 0.5±0.03mm Item Unit Value Test Standard 1）Colour —- Gray 3.2 2）Density g/cm³ ≥3.33 GB/T 2413 3）Thermal Conductivity 20℃，W/(m·K) ≥170 GB/T 5598 4）Dielectric Constant 1MHz 8~10 GB/T 5594.4 5）Dielectric Strength KV/mm ≥17 GB/T 5593 6）Flexural Strength MPa ≥450 GB/T 5593 7）Camber Length‰ ≤2‰ 　 8）Surface roughness Ra μm 0.3~0.6 GB/T 6062 9）Water absorption % 0 GB/T 3299-1996 10)Volume resistivity 20℃，Ω.cm ≥1013 GB/T 5594.5 11）Thermal expansivity 10-6/℃ 20~300℃ 2~3 GB/T5593 300~800℃ 2.5~3.5   For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen [...]

2019-07-03meta-author