PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas.
1. Charge Sensitive Pre-amplifier Specification
Power Consumption
<0.43W
Power
±12V
Output Resistance
50 Ω
Equivalent Noise
ENC: 130e–
Working temperature
-20℃-+40℃
Falling edge time
250 ~ 400us
Input charge range
<1000fc
Gain
G=10mv/fc
Dimension
100×76×44mm3
Weight
265g
2. Charge [...]
2019-04-25meta-author
Indium arsenide (InAs) single crystal is available with S doped, Zn doped, Sn doped and undoped conductivity types in various orientations and sizes. InAs is a compound semiconductor material that is difficult to purify. Indium arsenide single crystal growth can be processed by LEC [...]
2019-03-12meta-author
PAM XIAMEN offers Au (epi) /Cr coated SiO2/Si substrate.
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm
Au( highly oriented [...]
2019-04-26meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>.
2″ Diameter Wafer
2″ Wafers <211>
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm
For more information, [...]
2019-04-25meta-author
Ga2O3l-ß Crystal Substrate
PAM XIAMEN offers Ga2O3l-ß Crystal Substrate.
Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 1″x0.35mm, 2SP, Research grade with “Twin”
Substrate Specifications:
Chmistry: ß-Ga2O3
Structure: [...]
2019-04-19meta-author
We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal–organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward . The surface of the GaN epitaxial layers on [...]
2019-12-16meta-author
