PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at [email protected] and [email protected]
Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining This paper investigates the slicing of germanium wafers from single crystal, gallium-doped ingots using wire electrical discharge machining. Wafers with a thickness of 350 μm and a diameter of 66 mm were cut [...]
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point [...]
PAM XIAMEN offers PbTe single crystal substrate.(Not sell it temporarily) Lead telluride (Phoebe) is a compound of lead and tellurium (PbTe); it is a narrow gap semiconductor. It occurs naturally as the mineral altaite. It is often alloyed with tin to make lead tin telluride, [...]
PAM XIAMEN offers Indium Foil. Indium ( In ) Foil: 100 mm (W) x 100 mm ( L） x 0.1 mm ( T) Polycrystal In Foil Purity: > 99.995% Size: 0.10 mm thickness x 100mm width x 100 mm Length Surface finish: as cold rolling [...]
PAM XIAMEN offers GaP Substrate (100) . GaP (100) undoped GaP Wafer, undoped (100) 10x10x0.5 mm, 1sp GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp GaP wafer undoped (100) 2″ diaX 0.45mm 1sp, R: 1.5×10^14 ohm.cm, Semi-Insulating GaP wafer undoped (100) 2″ diaX 0.45mm 1sp,R: [...]
PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(10-11)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
