6″ Monocrystalline silicon wafers with insulating oxide

6″ Monocrystalline silicon wafers with insulating oxide

PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide

6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm

For more information, send us email at [email protected] and [email protected]

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