PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]
PAM XIAMEN offers Si-Ge alloy crystal. Si-Ge or silicon-germanium alloy wafer is commonly used as semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. Si-Ge alloys wafer are of interest because they have higher mobility [...]
Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° [...]
PAM-XIAMEN offers (10-11) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(10-11)-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased [...]
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 675 um. 6” Silicon wafer Wafer Size : 6 inch Silicon Thickness : 675 um Both polishing Axial direction : <100> Type : P/B resistivity:1-100Ωcm For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
