PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Magnesium ( Mg ) Single Crystal Substrate. Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut Magnesium ( Mg) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP Magnesium ( [...]
PAM XIAMEN offers 3″ Si wafer Thickness: 380±20μm. 3″ Si wafer with Thermal Oxide of thickness 1000A Diameter: 3″ Diameter: 76.2±0.3mm Thickness: 380±20μm Orientation: <100>±1° Type/dopant: N type/Phosphorus Resistivity: 1-20Ωcm Polishing: SSP Primary Flat 22.5±2.5mm, （110）±1° Surface roughness: <5A For more information, please visit [...]
This paper describes the bonding characteristics of 3C-SiC wafers using plasma enhanced chemical vapor deposition (PECVD) oxide and hydrofluoric acid (HF) treatment for SiC-on-insulator (SiCOI) structures and high-temperature microelectromechanical system (MEMS) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, [...]
PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates. General Properties for Tungsten Symbol W Atomic Number 74 Atomic Weight: 183.84 Crystal structure: BCC Lattice constant at room temperature: 0.316 nm Density: 19.25 g/cm3 Melting Point: 3422 °C Boiling Point: 5555 °C Tungsten (W) Polycrystalline Substrate: [...]
PAM XIAMEN offers Si-Ge alloy crystal. Si-Ge or silicon-germanium alloy wafer is commonly used as semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. Si-Ge alloys wafer are of interest because they have higher mobility [...]
