PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 8″CZ Prime Silicon Wafer 8 inch prime silicon wafer Orientation CZ <111> Diameter 200mm Thickness 1±0.025mm Total Thickness Variation ≤25μm Warp ≤50μm Surface Sigle -side Polished P type Resistivity 1-80Ωcm For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 785nm laser diode wafers. 785nm LD structures P+ GaAs P>5E19, d=0.15μm P- AlGaAs and undoped AlGaAs d~1.5μm Undoped AlGaInAs QW PL:770+-5nm Undoped AlGaAs and N- AlGaAs , d~1.5μm N GaAs buffer N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 15°off <111>A For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
PAM XIAMEN offers Co Single Crystal Substrate. Co Single Crystal Substrate (100) 10×10 x1.0 mm, 1 side polished Co Single Crystal Substrate (111) 10×10 x 1.0 mm, 1 side polished Co Metallic Substrate (polycrystalline): 10×10 x 1.0 mm, 1 side polished Cr Metallic Substrate [...]
Side view microphotograph of an electrode slice, depicting the structure of a nanowall/silicon/nanowall. Credit: Victor Krivchenko Members of the D. V. Skobeltsyn Institute of Nuclear Physic and colleagues from the Faculty of Chemistry of the Lomonosov Moscow State University have developed a new silicon- and [...]
Super Low Stress Nitron on Silicon Wafers PAM XIAMEN offers Super Low Stress Nitron on Silicon Wafers When you need the thickest nitride Super Low Stress Nitride is the nitride to use. We can deposit up to 4 micron of nitride using this method of nitride deposition. SPECIFICATIONS Thickness range: 50Å [...]
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 75 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 136 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 20 n- Si:P 300±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 21 n- Si:P 400±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 12.5±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.08 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.04 ±10% N/N+ 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 37.5 n- Si:P 270 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 37.5 n- Si:P 85±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 58 n- Si:P 60±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 8±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 5 n- Si:P 3±10% N/N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 60 n- Si:P 40.5±4.5 N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 20 n- Si:P 10±2 N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 58.75 ±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- [...]
