PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 60+1mm FZ Si Ingot -3 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Ceramic ALN SUBSTRATE. 100X100 Thickness 1.0±0.03mm Item Unit Value Test Standard 1）Colour —- Gray 3.2 2）Density g/cm³ ≥3.33 GB/T 2413 3）Thermal Conductivity 20℃，W/(m·K) ≥170 GB/T 5598 4）Dielectric Constant 1MHz 8~10 GB/T 5594.4 5）Dielectric Strength KV/mm ≥17 GB/T 5593 6）Flexural Strength MPa ≥450 GB/T 5593 7）Camber Length‰ ≤2‰ 8）Surface roughness Ra μm 0.3~0.6 GB/T 6062 9）Water absorption % 0 GB/T 3299-1996 10)Volume resistivity 20℃，Ω.cm ≥1013 GB/T 5594.5 11）Thermal expansivity 10-6/℃ 20~300℃ 2~3 GB/T5593 300~800℃ 2.5~3.5 For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen [...]
PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrates (111) BaTiO3 (111) 5×5 x1.0 mm, 2SP , Substrate grade(with domains) BaTiO3 (111) 5×5 x0.5 mm, 1SP , Substrate grade(with domains) BaTiO3 (111) 5×5 x1.0 mm, 1SP , Substrate grade(with domains) BaTiO3 (111) 10x10x0.5 mm, 1SP , [...]
PAM XIAMEN offers 2″CZ Prime Silicon Wafer tem1, 100pcs Silicon wafer: i. Diameter: 50.8 mm ± 0.5 mm, ii. Thickness: 275 μm ±25μm, iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: [...]
Analog Multi-channel Analyzer AMCA-01 is an analog multi-channel equipment which used for energy spectrum analyze for variety of radiations detectors. Added with upper computer software, it can collect analog energy spectral signal, drawing energy spectrum and analyzing it, and counting full energy peak resolution. The [...]
Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate Highlights • The growth of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate. • The investigation of the effect of HT-AlN thickness on crystalline quality and stress of GaN on SiC. • The semi-insulating characteristic of GaN layer analyzed by PL [...]
