PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at [email protected] and [email protected]
Veeco MBE reactor for laser diodes IPG Photonics adds 4th Veeco MBE reactor for laser diodes Aug 29, 2012 The tool will be used to manufacture gallium arsenide based devices Veeco Instruments has recently completed installation of a GEN2000 Edge MBE system at IPG Photonics Corporation. The system was delivered to [...]
PAM-XIAMEN participates in the design and processing of MEMS and compound semiconductor GaAs microwave integrated circuit (GaAs MMIC) devices, and focuses on the research, development, production and service of micro-nano sensors, micro-electromechanical systems (MEMS), micro-nano manufacturing and compound semiconductor GaAs chips. We are a [...]
Silicon epitaxy with Boron dopant in size 200mm from PAM-XIAMEN is available for semiconductor device fabrication. Silicon epitaxy growth is a surface treatment process for silicon wafers, which means that a single crystal film is superimposed on the polished wafer by chemical reaction or other [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-3 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° 10,000Ωcm>Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
The commonly used 4H-SiC and 6H-SiC space groups are both P63mc, and the point group is 6mm. 6mm belongs to one of 10 polar point groups (1, 2, 3, 4, 6; m, 3m; mm2, 4mm, 6mm), so 4H-SiC and 6H-SiC are polar crystals. The [...]
PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 90 n- Si:P 41±10% n/n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 5±10% n/n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 96 n- Si:P 30±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 21±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 16 ±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 12±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 20±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 135 n- Si:P 35±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 140 n- Si:P 31±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 38±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 25±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 150 n- Si:P 44±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 158 n- Si:P 67±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 8 n- Si:P 0.63±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 0.07±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 30 n- Si:P 6.75±10% n/n+ 3″Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 75 n- Si:P 40±10% n/n/n+ 3″Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 25 n- Si:P 2.5±10% n/n/n+ For [...]
