PAM-XIAMEN can offer 2” InGaAs/InP epi wafer for PIN as follows. InGaAs is the compound of InAs and GaAs. In the periodic table of chemical elements, In and Ga are elements of the third group, and As is the fifth group element. The properties of InGaAs [...]
A 6-inch MicroLink Devices high-efficiency, lightweight and flexible ELO IMM solar cell wafer. Credit: MicroLink Devices
The U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) has entered into a license agreement with MicroLink Devices, Inc. (Niles, IL) to commercialize NREL’s patented inverted metamorphic [...]
2017-11-16meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN on Sapphire substrate and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, [...]
2017-12-28meta-author
We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then [...]
1. System introduction:
The cadmium zinc telluride (CZT) technology based MXA-128 X-ray photon counting imaging system is composed of pixel linear array CZT detector modules and low noise ASICs. The energy suits for it ranging from 20keV to 160keV. Its energy resolution is 0.5lp/mm. [...]
2020-08-11meta-author
PAM-XIAMEN provides indium arsenide (InAs) ingot with high quality and competitive price. Indium arsenide is a group III-V compound semiconductor material composed of indium and arsenic. It is a silver-gray solid at room temperature, and the indium arsenide crystal structure is a zinc blende crystal [...]
2021-06-23meta-author