PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm 4inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 101.6mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns TTV<15μm Distortion: less than 35 microns Thickness of the isolation oxide: at least 20 nm Front side: polished. Back side: lapped-etched For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers high-quality Au/Cr coated SiO2/Si substrate. Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm Au( highly oriented polycrystalline)/Cr [...]
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer. 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5度), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ [...]
This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]
100mm N type GaN substrate PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows: 4″(100mm) Undoped Free-standing GaN Substrate Item PAM-FS-GaN100-U Conduction Type Undoped Size 4″(100)+/-1mm Thickness 350-450um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length – Secondary Flat Location (11-20)+/-3° Secondary Flat Length – Resistivity(300K) <0.5Ω·cm Dislocation Density <5×10^6cm-2 FWHM – TTV <=35um BOW <=50um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded Usable Area ≥ 90 % 4″(100mm) N-doped [...]
Transmitance-GaN material-TEST REPORT A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
