6″ Prime EPI Wafer

PAM XIAMEN offers 6″ Prime EPI Wafer.

6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P (phosphorus)
– resistivity: 10-16 ohm cm
– thickness: 10-15 micron
substrate:
-type: n
-dopant: Sb (Antimony)
– resistivity: 0.008-0.025 ohm cm
– thickness: 290±20 um (without backlapping introduced)
1. The deviation of the central resistivity value of the epitaxial layer ≤±5%
2. The resistivity uniformity of the epitaxial layer is ≤±3%
3. The deviation of the thickness center value of the epitaxial layer is ≤±5%
4. Thickness uniformity of the epitaxial layer ≤±3%
5. Stacking dislocation density 10/cm2
6. Slip line 5, the total length does not exceed the wafer radius
7. Haze, Scratch, Pit, Orange peel, Crack, Edge breakage/ chipping, Impurity,
Back stain NONE
8. Coronal margin, surface elevation not exceeding 1/3 of epitaxial thickness
9. Point defect SEMI standard: Particle@>0.3μm, <20 counts

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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