We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab（USA）,University of California, [...]
2019-10-29meta-author
Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p–i–n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method [...]
2019-12-02meta-author
Single crystal diamond for sale from PAM-XIAMEN is grown by chemical vapor deposition (CVD), which is a method of decomposing hydrogen and hydrocarbon gas into hydrocarbon active groups at high temperature, and depositing diamond on the substrate material under certain conditions. Theoretically, the method is [...]
2019-04-19meta-author
GaN HEMT RF Epitxial Wafer on Si substrate, which is a wide bandgap semiconductor, can be offered by PAM-XIAMEN. The GaN HEMT on Si wafer has obvious advantages in the high-power, high-frequency application field. As for the GaN HEMT RF devices, they include PA, LNA, [...]
2019-05-17meta-author
PAM XIAMEN offers PMNT Substrate. PMNT (Lead Magnesium Niobate-Lead Titanate) is new Piezocrystal for Next-Generation Electromechanical Transducers. PAM XIAMEN supplies high quality PMNT crystal up to 25x25x mm in mass production. PMNT Substrate (001) 10x10x0.25mm, one side polished PMNT Substrate (001) 10x10x0.5mm, one side [...]
2019-05-14meta-author
There are more than 200 silicon carbide crystal types in the world, among which the mainstream crystal type of current silicon carbide wafer production is 4H-SiC. Below specification of 100mm silicon carbide in PAM-XIAMEN are available: 1. Specifications of 100mm Silicon Carbide 4H N-type Specificationsof Silicon Carbide N-type 100mm Diameter – polytype 4H-SiC A type N-type SiC substrate Resistance 0.015 [...]
2020-03-06meta-author
