6″ Silicon EPI Wafer

PAM XIAMEN offers 6″ Silicon EPI Wafers.

SubstrateEPIComment
SizeTypeRes
Ωcm
Surf.Thick
μm
TypeRes
Ωcm
6″Øx675μmn- Si:P[100]0.001-0.002P/EOx3.2 ±0.2n- Si:P0.32-0.46n+/n++

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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