PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected].
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime n-type Si:P [111] 2″ 500 P/P FZ 130-150 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ 125-210 SEMI Prime n-type Si:P [111] 2″ 380 P/E FZ 100-300 SEMI Prime n-type Si:P [111] 2″ 450 P/P FZ 100-230 Prime, NO Flats n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 80-100 SEMI Prime, in hard cst {as ingot to process} n-type Si:P [111] 2″ 300 P/P FZ 70-95 SEMI Prime n-type Si:P [111-1°] 2″ 300 P/E FZ 69-77 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime n-type Si:P [111] 2″ 300 P/E FZ 60-90 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 55-75 SEMI Prime, in hard cst {as ingot [...]
PAM XIAMEN offers MgF2 crystal. MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications Xtl Structure Lattice (A) Melting Point Density g/cm3 Hardness Thermal Expansion Refractive index Tetragonal a = 4.64 1255 oC 3.18 6 (mohs) 13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c ho 1.37740 c = 3.06 he 1.38945 MgF2 [...]
PAM-XIAMEN can provide wafer polishing service for III-V compound wafers (such as InSb wafer, GaSb wafer, InAs wafer), ultra-thin semiconductor wafer, CZT wafer and other photoelectric materials. We aim to adopt a high-precision chemical polishing process to minimal surface damage. Take the InSb wafer [...]
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]
PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(11-22)- SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (11-22) plane off angle toward A-axis 0 ±0.5° (11-22) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) > 106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
PAM XIAMEN offers Zirconium Substrate & Foil ( Polycrystalline ). Zr – Polycrystalline Substrate: 10 x 10 x0.5 mm, One sides polished Polycrystallline Zr substrate Purity: 99.5% Density: 6.52 g/cm3 Melting Point: 1855ºC Average Grain Size: 10~50 Microns ( No annealling ) Substrate dimension: 10 x 10 x0.5 [...]
