PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com.
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When talking about the topic that step growth reduces silicon carbide defects, it is necessary to discuss the process for the growth of silicon carbide single crystals. Gas-solid phase transitions are involved in the growth process of silicon carbide single crystals by PVT or HTCVD method. Therefore, there [...]
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PAM XIAMEN offers 6″ FZ Silicon Ignot. 6″ Silicon Ingot FY37b. 11.817Kg Silicon ingot, per SEMI, G 150.7±0.3mmØ, FZ Intrinsic undoped Si:-[100]±2.0°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, Length: 286mm For more information, please visit our website: [...]
We specialize in providing antimonide wafers, like InSb wafer: https://www.powerwaywafer.com/compound-semiconductor/insb-wafer.html. In addition, we will offer technology support for you. Here we share a paper “New Process Results in Smoother Indium Antimonide Substrates”, which is about modified chemomechanical polishing of InSb wafer. Reprinted from: spie.org Published by: Patrick [...]
