PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
300
P/P
FZ >150
SEMI Prime
n-type Si:P
[111]
2″
500
P/P
FZ 130-150
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ 125-210
SEMI Prime
n-type Si:P
[111]
2″
380
P/E
FZ 100-300
SEMI Prime
n-type Si:P
[111]
2″
450
P/P
FZ 100-230
Prime, NO Flats
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 80-100
SEMI Prime, in hard cst {as ingot to process}
n-type Si:P
[111]
2″
300
P/P
FZ 70-95
SEMI Prime
n-type Si:P
[111-1°]
2″
300
P/E
FZ 69-77
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ >60
SEMI Prime
n-type Si:P
[111]
2″
300
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 55-75
SEMI Prime, in hard cst {as ingot [...]
2019-03-07meta-author
PAM XIAMEN offers MgF2 crystal.
MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Tetragonal
a = 4.64
1255 oC
3.18
6 (mohs)
13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c
ho 1.37740
c = 3.06
he 1.38945
MgF2 [...]
2019-05-10meta-author
PAM-XIAMEN can provide wafer polishing service for III-V compound wafers (such as InSb wafer, GaSb wafer, InAs wafer), ultra-thin semiconductor wafer, CZT wafer and other photoelectric materials. We aim to adopt a high-precision chemical polishing process to minimal surface damage. Take the InSb wafer [...]
2022-02-16meta-author
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching
In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]
2013-03-29meta-author
PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author
PAM XIAMEN offers Zirconium Substrate & Foil ( Polycrystalline ).
Zr – Polycrystalline Substrate: 10 x 10 x0.5 mm, One sides polished
Polycrystallline Zr substrate
Purity: 99.5%
Density: 6.52 g/cm3
Melting Point: 1855ºC
Average Grain Size: 10~50 Microns ( No annealling )
Substrate dimension: 10 x 10 x0.5 [...]
2019-05-21meta-author