PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected].
PAM XIAMEN offers 4″CZ Prime Silicon wafer-14 Silicon wafer dia 4 inch thickness 500 um P type boron doped or N doped resistivity 1-10 ohm cm orientation 100 For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Si-Ge alloy crystal. Si-Ge or silicon-germanium alloy wafer is commonly used as semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. Si-Ge alloys wafer are of interest because they have higher mobility [...]
PAM XIAMEN offers 6″CZ Prime Silicon Wafer-2 Si wafers Orientation (100) Dia 6” x thickness 500µm Type n or p 1-20 ohm.cm One side polished For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers BARIUM FLUORIDE BAF2 CRYSTAL. To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote. Barium fluoride, BaF2, crystal has good transmittance over a wide spectrum range, from 150 nm to 12.5 um. It has been widely used [...]
The development stages of semiconductor wafers are elemental semiconductor, compound semiconductor and wide bandgap semiconductor, as shown in the Fig. 1. Semiconductor wafers can be divided into narrow band gap semiconductors and wide band gap semiconductors according to different band gaps. Wide Band Gap [...]
PAM XIAMEN offers (110) Silicon Substrates. If you don’t see what you need then please email at [email protected] Diam (mm) Material Dopant Orient. Thck (μm) Surf. Resistivity Ωcm Comment 6″ p–type Si:B [110] ±0.5° 390 ±10 C/C >10 Prime, 2Flats, Empak cst 7″ p–type Si:B [110] ±0.5° 500 P/E FZ >10,000 Prime, 2Flats, Empak cst, TTV<5μm 8″ p–type Si:B [110] ±0.5° 200 P/P FZ 1–2 Prime, 2Flats, Empak cst 9″ p–type Si:B [110] ±0.5° 200 P/P FZ 1–2 SEMI Prime, 2Flats, Empak cst 10″ p–type Si:B [110] [...]
