PAM XIAMEN offers 60+1mm FZ Si Ingot -2
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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SPCW Wide Range Radiation Doses Module SPCW is a counting module based on CZT detector. It integrates CZT detector, high gain charge sensitive amplifier and SK shaping circuit. The radiation dose rates ranges from 0.1μGy/h~1Gy/h will be its guest. Specification Energy range 30KeV~1.5MeV Radiation dose rate range 0.1uGy/h [...]
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
PAM XIAMEN offers PbWO4 single crystal substrate. PbWO4 single crystal substrate ,random orientation, 5 x 3 x 0.45mm,Single side polished PbWO4 single crystal substrate ,random orientation, 5 x 5 x 0.45mm,Single side polished PbWO4 (001) single crystal substrate 10x10x0.5mm,2sp PbWO4 single crystal substrate , [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] ±0.5° 4″ 630 P/G FZ >7,000 SEMI Prime, Lifetime>1,000μs, Back-side Fine Ground n-type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, Lifetime>1,600μs,settes of 6 and 8 wafers n-type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, Lifetime>1,600μs n-type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI TEST (Scratches, Lifetime>1,600μs n-type Si:P [111] ±0.25° 4″ 675 P/E FZ 7,000-10,000 SEMI Prime, Lifetime>1,000μs, Light scratches n-type Si:P [111] ±0.5° 4″ 525 P/E FZ >5,000 SEMI Prime, Lifetime>1,000μs n-type Si:P [111-1° towards[110]] ±0.5° 4″ 525 P/E FZ >5,000 SEMI TEST (scratches on back-side) n-type Si:P [111] ±0.25° 4″ 675 P/E FZ 5,000-7,000 SEMI Prime, [...]
PAM XIAMEN offers CaF2. CaF2, (100), 10x10x 0.5 mm 2 Sides polished CaF2, (100), 10x10x 0.5 mm 1 Side polished CaF2, (100), 10x10x 1.0mm , 1 Side polished CaF2, (100), 10x10x 1.0mm , 2 Side polished CaF2, (111), 10x10x 0.5mm , 2 Side polished [...]
Semi-insulating GaAs substrates 3 inch Dia 3 inch Semi-insulating GaAs(Gallium Arsenide) substrates are available, please see below specification: Parameters Specifications Material VGF GaAs Single Crystal Wafer Grade Prime, Epi-Ready Doping Semi-Insulating, Undoped Wafer OD 76.2+/-0.63mm Wafer Orientation (100)+/-0.25 deg. Primary Flat Length 22.22+/-3.17 mm Secondary Flat Length 11.15+/-1.52 mm Primary Flat Location (01-1)+/-0.5◦ deg. (US SEMI) Secondary Flat Location (011)+/-0.5 deg. (US SEMI) Primary/Secondary Flat Orientation 90◦+/-0.5◦ Secondary [...]
