FZ Silicon Ignot Diameter 80+1mm-1
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more [...]
2019-07-03meta-author
PAM XIAMEN offers 8″ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/E 8″(200.0±0.2mm) Ø×1,000±25µm,
p-type Si:B[111]±0.5°, Ro: <100 Ohmcm,
TTV<6µm, Bow<60µm, Warp<60µm,
One-side-polished, Particles: ≤10@≥0.3µm,
Back-side etched, SEMI notch,
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-02meta-author
Targeted Stress LPCVD Nitride
PAM XIAMEN offers Targeted Stress LPCVD Nitride
Targetted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications.
Please provid us with your application for an immediate quote.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-02-12meta-author
PAM XIAMEN offers 2 inch Aluminum Nitride (AlN) Template on sapphire.
1.Specification of (Aluminum Nitride) (AlN) Template on sapphire
Spec1:
2 INCH ALUMINUM NITRIDE ALN TEMPLATE ON SAPPHIRE (0001) SEMI-INSULATING TYPE
Conductivity type: Semi-insulating AlN
Substrate: Sapphire
Dimension: Φ50.8 mm ± 0.1 mm
Thickness: 200nm ~ 5 um [...]
2019-03-11meta-author
PAM XIAMEN offers 3″ Silicon Wafer-18
Si wafer
Orientation: (100) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 4° to <110>
Resistivity: < 0.005 Ohm*cm
single side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-13meta-author
SPECT, γ-imaging Detector
PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation.
Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
25.4×25.4mm2
Thickness
5.0mm
Pixel size
1.5×1.5mm2
Pixel center-to-center space
1.6mm
Pixel array
16×16
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
20KeV!~700MeV
Energy resolution(22℃)
Average<6%@122KeV
(>13% means defective pixel)
Photo-Peak Efficiency(PPE)
Average>40%
Defined [...]
2019-04-24meta-author