60+1mm FZ Si Ingot -2

PAM XIAMEN offers 60+1mm FZ Si Ingot -2

FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not

For more information, send us email at [email protected] and [email protected]

2020-03-11

Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector

Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector Near-infrared reflectance spectra of 5 μm thick low-temperature (LT) GaAs films on GaAs/AlAs Bragg reflectors (BRs) have been studied by model calculations as a function of the linear absorption coefficient of the films αf. [...]

2013-12-10meta-author LT-GaAs layer

Ba1-xSrxTiO3 Film on (Pt/Ti/SiO2/Si)

PAM XIAMEN offers BaSrTiO3 Film on substrate. BaSrTiO3 Film ( 400nm) on Nb.SrTiO3(wt 0.7%), 10x10x0.5mm,1sp Ba1-xSrxTiO3 is an excellent enhanced dielectronic film grown on Nb doped SrTiO3 conductive substrate via special spin coating: Film Sppecifications: Chemical composition: BaSrTiO3 Film thickness: ~ 400 nm Crystalline: Polycrystal Growth [...]

2019-04-26meta-author

LASRALO4 STRONTIUM LANTHANUM ALUMINATE CRYSTAL SUBSTRATES

PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates. Main ParametersCrystal structure M4Growth method Czochralski methodUnit cell constant a=3.756Å c=12.63 ÅMelt point（℃） 1650Density 5.92（g/cm3）Hardness 6-6.5（mohs）Dielectric constants ε=16.8Size 10×3，10×5，10×10，15×15，20×15，20×20Ф15, [...]

2019-03-14meta-author

BaTiO3-4

PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrates (001) BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade with single domain BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade(with domains) BaTiO3 (001) 5x5x1.0 mm, 2SP, Substrate grade(with domains) BaTiO3 (001) 10x10x0.5 mm, 1SP, Substrate grade (with domains) BaTiO3 [...]

2019-04-17meta-author

InSb Wafer

PAM XIAMEN offers InSb Wafer. InSb Ge-doped InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1 InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]

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Zero Diffraction Si Wafer Diameter 32mm for XRD measurements

PAM XIAMEN offers Zero Diffraction Si Wafer Diameter 32mm for XRD measurements Zero Diffraction Plate 32 mm Dia. x Thickness 2.0 mm Si Crystal for XRD sample with below specifications Resistivity>1Ωcm Size: 32 mm diameter x 2.0 mm thickness Surface: double side optical polished Zero diffraction plate is made of [...]

2020-04-23meta-author

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[email protected] [email protected]

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60+1mm FZ Si Ingot -2

60+1mm FZ Si Ingot -2

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