What we provide:
Item
undoped N-
Si doped N+
Semi-insulating
P+
Freestanding GaN substrate
yes
yes
yes
GaN on sapphire
yes
yes
yes
yes
InGaN on sapphire
yes
***
AlN on sapphire
yes
LED wafer
(p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire)
Freestanding GaN substrate/GaN on sapphire/LED wafer:
For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer:
http://www.qualitymaterial.net/products_7.html
InGaN on Sapphire:
For specification of InGaN on sapphire template, pleas view InGaN substrate:
https://www.powerwaywafer.com/InGaN-Substrates.html
AlN on [...]
2019-09-24meta-author
From a solid-state device perspective, aluminum arsenide (AlAs) has great potential, especially because alloys of AlAs and GaAs can provide material for high-speed electronic and optoelectronic devices. Moreover, GaAs / AlAs quantum well structures are widely used in the fabrication of III-V epitaxial wafer. [...]
P-type GaN thin film epitaxial on GaN substrate is the main technique for developing emitting device. Mg is the most common p-type dopant in III-nitride material systems, partly due to the established activation process. High p-type doping of Mg concentration (1018/cm3) will be achieved [...]
2021-12-23meta-author
PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).
General Properties for Titanium
Symbol Ti
Atomic Number 22
Atomic Weight: 47.867
Crystal structure: HCP
Lattice constant at room temperature a: 0.295 nm
Lattice constant at room temperature b: 0.468 nm
Density: 4.506 g/cm3
Melting Point: 1668°C [...]
2019-05-20meta-author
Indium Arsenide (InAs) wafer can be provided by PAM-XIAMEN with a diameter up to 2 inch and a wide choice in off or exact orientation, high or low concentration and surface processed to optoelectronics industry. InAs wafer is an important III-V narrow band gap [...]
PAM XIAMEN offers 1″ Diameter Wafer.
1″ Diameter Wafer
Ge Wafer Undoped, 1″ dia x 0.5 mm , 1SP(100) R:>45 Ohm.cm
Ge Wafer (100) Undoped, 1″ dia x 0.5 mm , 2SP,R:>50 ohm.cm
Ge Wafer (110) Undoped, 1″ dia x 0.5 mm , 1SP,R:>50 [...]
2019-04-23meta-author