PAM XIAMEN offers 60+1mm FZ Si Ingot -2
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm 2inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 50.8mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns TTV<15μm Distortion: less than 35 microns (the value is unchanged) Thickness of the isolation oxide: at least 20 nm Front side: polished Back side: lapped-etched For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers KCl Crystal. KCl (100), 10x10x 2.2-2.5 mm 1 Side polished Crystal: KCl Crystal Orientation: <100> +/-2.5 o Size: 10x10x 2.2-2.5 mm Polished: one side polished Purity: 99.9% Surface finish (RMS or Ra) : < 100A Package: 1000 class clean plastic bag sealed Note: KCl [...]
P-type silicon carbide substrate is generally used to make power devices, such as insulated gate bipolar transistors (IGBT, Insulate-Gate Bipolar Transistor). IGBT= MOSFET+BJT, it is a non-on or off switch. MOSFET=IGFET (Metal Oxide Semiconductor Field Effect Transistor, or Insulated Gate Field Effect Transistor). BJT (Bipolar [...]
PAM-XIAMEN offers GaN on silicon HEMT wafer for Power, E-mode. Because the normally-on characteristic will Increase the complexity of circuit design and power consumption, designing an enhanced (E-Mode) HEMT that is turned off under zero grid bias will be crucial for advancing the application of GaN-on-Silicon HEMT in [...]
PAM XIAMEN offers Single crystal SrLaGaO4. Single crystal SrLaGaO4, (100), 10×9.8×0.5mm 1sp Single crystal SrLaGaO4, (001), 10x3x0.5mm , one side polished Single crystal SrLaGaO4, (001), 10x5x0.5mm , one side polished Single crystal SrLaGaO4, (100), 10x10x0.5mm 2sp Single crystal SrLaGaO4, (100), 10x3x0.5mm , one side [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 3″ 1500 P/E 5-7 SEMI Prime n-type Si:P [100] 3″ 350 P/P 1-5 SEMI Prime n-type Si:P [100] 3″ 350 P/P 1-25 SEMI Prime, TTV<1μm, Empak cst n-type Si:P [100] ±1° 3″ 500 P/P 1-100 SEMI Prime, TTV<2μm, Empak cst n-type Si:P [100-4°] ±0.5° 3″ 500 P/E 1-20 Prime n-type Si:P [100] 3″ 650 P/P 1-10 Prime, TTV<2μm n-type Si:P [100] 3″ 1000 P/P 1-5 SEMI Prime, hard cst n-type Si:P [100] 3″ 1000 P/E 1-20 SEMI Prime n-type Si:P [100] 3″ 6000 P/E 1-20 SEMI Prime, Individual cst n-type Si:Sb [100] 3″ 300 P/E 0.02-0.04 SEMI Prime, in hard cassettes of 2 wafers n-type Si:Sb [100] 3″ 381 P/E 0.008-0.020 SEMI Prime n-type Si:As [100] 3″ 380 P/EOx 0.001-0.005 SEMI Prime, LTO Back-side seal [...]
