PAM XIAMEN offers 60+1mm FZ Si Ingot -2
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
FZ Silicon Ignot Diameter 80+1mm-1 PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more [...]
PAM XIAMEN offers 8″ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 8″(200.0±0.2mm) Ø×1,000±25µm, p-type Si:B[111]±0.5°, Ro: <100 Ohmcm, TTV<6µm, Bow<60µm, Warp<60µm, One-side-polished, Particles: ≤10@≥0.3µm, Back-side etched, SEMI notch, Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, [...]
Targeted Stress LPCVD Nitride PAM XIAMEN offers Targeted Stress LPCVD Nitride Targetted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications. Please provid us with your application for an immediate quote. For more information, please visit our website: https://www.powerwaywafer.com, send [...]
PAM XIAMEN offers 2 inch Aluminum Nitride (AlN) Template on sapphire. 1.Specification of (Aluminum Nitride) (AlN) Template on sapphire Spec1: 2 INCH ALUMINUM NITRIDE ALN TEMPLATE ON SAPPHIRE (0001) SEMI-INSULATING TYPE Conductivity type: Semi-insulating AlN Substrate: Sapphire Dimension: Φ50.8 mm ± 0.1 mm Thickness: 200nm ~ 5 um [...]
PAM XIAMEN offers 3″ Silicon Wafer-18 Si wafer Orientation: (100) ± 0.5° Type: n-type Dopant: P Diameter: 76.2 ± 0.3 mm Thickness: 380 ± 25 um Disorientation: 4° to <110> Resistivity: < 0.005 Ohm*cm single side polished For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
SPECT, γ-imaging Detector PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation. Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 25.4×25.4mm2 Thickness 5.0mm Pixel size 1.5×1.5mm2 Pixel center-to-center space 1.6mm Pixel array 16×16 Electrode material Au Operation temperature -20℃-+40℃ Energy range 20KeV!~700MeV Energy resolution(22℃) Average<6%@122KeV (>13% means defective pixel) Photo-Peak Efficiency(PPE) Average>40% Defined [...]
