PAM XIAMEN offers 60+1mm FZ Si Ingot -2
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
What we provide: Item undoped N- Si doped N+ Semi-insulating P+ Freestanding GaN substrate yes yes yes GaN on sapphire yes yes yes yes InGaN on sapphire yes *** AlN on sapphire yes LED wafer (p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire) Freestanding GaN substrate/GaN on sapphire/LED wafer: For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer: http://www.qualitymaterial.net/products_7.html InGaN on Sapphire: For specification of InGaN on sapphire template, pleas view InGaN substrate: https://www.powerwaywafer.com/InGaN-Substrates.html AlN on [...]
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