PAM XIAMEN offers single crystal undoped or Ga-doped ZnO wafer substrate, which is grown by hydrothermal method under high pressure.There are two structures mainly in ZnO wafer: Hexagonal wurtzite and cubic zinc blende, what we offered is Hexagonal wurtzite.
1.Properties of ZnO Wafer:
1.1 General Properties [...]
2019-05-21meta-author
PAM XIAMEN offers GaN LED epiwafer, which is grown on a patterned sapphire substrate (Al2O3) heated to an appropriate temperature, the gaseous substance InGaAIP is transported to the surface of the substrate in a controlled manner, and a specific single crystal film is grown. At [...]
2019-03-15meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAsN wafer and other related products and services announced the new availability of size 2″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We [...]
2017-07-11meta-author
A comparative study of the bonding energy in adhesive wafer bonding
Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. [...]
2018-07-17meta-author
We have successfully produced and characterized thin single crystal Ge films on sapphire substrates (GeOS). Such a GeOS template offers a cost-effective alternative to bulk germanium substrates for applications where only a thin (<2 µm) Ge layer is needed for device operation. The GeOS [...]
2020-02-18meta-author
PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide
2″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author