PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 80+1mm FZ Si Ingot FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers GaN Template on Silicon. Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride [...]
Two-dimensional (2D) arrays of nanometre scale holes were opened in thin SiO2 layers on silicon by electron beam lithography and chemical etching. Oxidized silicon wafers with a 5 nm thick SiO2 layer on top were used in this respect. Pattern transfer involved either only removal of SiO2 or [...]
A 6-inch MicroLink Devices high-efficiency, lightweight and flexible ELO IMM solar cell wafer. Credit: MicroLink Devices The U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) has entered into a license agreement with MicroLink Devices, Inc. (Niles, IL) to commercialize NREL’s patented inverted metamorphic [...]
PAM XIAMEN offers (111) Silicon Wafers. If you don’t see what you need then please email us your specs. Diam (mm) Material Dopant Orient. Thck (μm) Surf. Resistivity Ωcm Comment 6″ n-type Si:P [111] ±0.5° 300 ±15 P/P FZ >6,000 SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst 7″ n-type Si:P [111] ±0.5° 300 ±15 P/P FZ >6,000 SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst 8″ Intrinsic Si:- [111] ±0.5° 750 E/E FZ >10,000 SEMI notch, TEST (defects, [...]
FWHM and XRD report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
