PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers BaSrTiO3 Film on substrate. BaSrTiO3 Film ( 400nm) on Nb.SrTiO3(wt 0.7%), 10x10x0.5mm,1sp Ba1-xSrxTiO3 is an excellent enhanced dielectronic film grown on Nb doped SrTiO3 conductive substrate via special spin coating: Film Sppecifications: Chemical composition: BaSrTiO3 Film thickness: ~ 400 nm Crystalline: Polycrystal Growth [...]
CZT Probe(CZT Detector with Preamplifier) PAM-01C1 integrated customized hemispherial electrode CZT detector and low noise charge sensitive preamplifier. It can convert X/γ-ray into exponential decay signal. Working with five-pin cable, high and low power supply, main amplifier，those signals will be direct into multi-channel pulse analyzer and then the [...]
PAM XIAMEN offers LSGM single crystal substrate. Now LSGM （La 0.95 Sr 0.05 Ga 0.95 Mg 0.05 O 3-δ） single crystal substrate is commercially available from PAM XIAMEN by contract growth via CZ method. LSGM has the advantage of a broad electrolytic domain with [...]
Effect of annealing on the residual stress and strain distribution in CdZnTe wafers The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction [...]
GaAs(111) crystal wafer PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer: 1.Wafer List GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 [...]
