PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
Highlights •Fabrication scheme for heterogenous Si-to-InP circuits on wafer level is described. •Wafer-to-wafer alignment accuracy better than 4–8 μm after bonding obtained. •Interconnects with excellent performance up to 220 GHz demonstrated. •Palladium barrier necessary when combining Al-based technology with gold based one. Abstract In order to benefit from the material [...]
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 700±25μm. Thickness 700±25μm Si, 150mm dia. SSP N type Phos or antimony resistivity 0.01-0.2 ohm-cm with 200A thermal OX and 1200A LPCVD nitride – stoichiometric For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
Germanium was an early transistor material. Now its charge-carrying abilities and advanced fabrication technology make it an attractive material for future chips. As a proof of concept, our team used germanium-on-insulator wafers to construct inverters containing first planar transistors and then FinFETs Germanium was first [...]
‘Optically pumped’ laser closer to improving processing speed of sensors Researchers are developing a new material that could improve processing speed of sensors and other electronic components. Credit: University of Arkansas Imagine creating a material for the digital information highway that allows a fast lane of [...]
PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(20-21)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
PAM XIAMEN offers Aluminum Oxide Substrate Al2O3. Aluminum Oxide Ceramic Substrates Porperties Purity (wt%) 0.96 0.996 0.996 0.999 Density (g/cm3) > 3.75 3.88 3.87 3.92 Thermal conductivity (W/m. K) 24 34.7 35 35 Thermal Expansion (x10-6/oC) < 7.7 7~8.3 7~8.3 8.1 Dielectric Strength (Kv/mm) > 14 23.64 23.64 8.7 Dielectric Constant (at 1MHZ) 9.8 9.9 9.9 9.8 Loss Tangent (x10-4 @1MHZ) 4 1 1 < 1 Volume Resistivity (ohm-m) > 1013 at [...]
