GaAs/AlGaAs/GaAs epi wafer
We can offer 2″ or 4” GaAs/AlGaAs/GaAs epi wafer, please see below typical structure:
Structure1:
2”GaAs/AlGaAs/GaAs epi wafer
S.No
Parameters
Specifications
1
GaAs substrate layer thickness
500μm
2
layer thickness
2μm
3
GaAs top layer thickness
220 nm
4
Mole fraction of Al (x)
0.7
5
Doping level
Intrinsic
Structure2:
4″diameter AlGaAs/GaAs Wafer.
The structure (top to bottom) PAM-190605-ALGAAS:
GaAs (10 nm)
[...]
UV LED wafer
We can provide 2″ UV LED wafer and AlN wafer for medical & scientific applications including photodynamic therapy also benefit from a high power and high flux density LED.
Features & Dimensions
Growth Technique – MOCVD
Substrate Material:Sapphire Substrate (Al2O3)
Substrate Conduction: Insulating
Substrate Orientation: c-Plane [...]
Undoped Gallium Arsenide(GaAs) Wafer
PAM-XIAMEN offer undoped GaAs wafer as follows:
No1.Undoped GaAs wafers,2”size
Diameter:50.8 mm +/- 0.3 mm
Orientation: (100)+/-0.1deg.
Semi Insulating, Undoped
US Semi Standard Flats
Major Flat Length: 17+/-1mm
Minor Flat Length: 7+/-1mm
Thickness: 350+/-25um
Resistivity: >1E7 Ohm*cm
Mobility: >=4000 cm2/V*s
CC: Not Specified
EPD: <=5000 cm-2
1 Side Polished (Ra < 5Å), EPI [...]
2020-04-03meta-author
Highlights
•The thickness of graphene grown on SiC was determined by AES depth profiling.
•The AES depth profiling verified the presence of buffer layer on SiC.
•The presence of unsaturated Si bonds in the buffer layer has been shown.
•Using multipoint analysis thickness distribution of the graphene on [...]
A novel method for estimating threshold voltage shifts of n-channel SiC MOSFETs under negative gate bias stresses has been proposed. In the proposed method, n-type SiC MOS capacitors were utilized instead of n-channel SiC MOSFETs. The n-type SiC MOS capacitors were exposed to ultraviolet [...]
2019-10-21meta-author
The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is [...]
2020-02-11meta-author