PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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GaAs/AlGaAs/GaAs epi wafer We can offer 2″ or 4” GaAs/AlGaAs/GaAs epi wafer, please see below typical structure: Structure1: 2”GaAs/AlGaAs/GaAs epi wafer S.No Parameters Specifications 1 GaAs substrate layer thickness 500μm 2 layer thickness 2μm 3 GaAs top layer thickness 220 nm 4 Mole fraction of Al (x) 0.7 5 Doping level Intrinsic Structure2: 4″diameter AlGaAs/GaAs Wafer. The structure (top to bottom) PAM-190605-ALGAAS: GaAs (10 nm) [...]
UV LED wafer We can provide 2″ UV LED wafer and AlN wafer for medical & scientific applications including photodynamic therapy also benefit from a high power and high flux density LED. Features & Dimensions Growth Technique – MOCVD Substrate Material:Sapphire Substrate (Al2O3) Substrate Conduction: Insulating Substrate Orientation: c-Plane [...]
Undoped Gallium Arsenide(GaAs) Wafer PAM-XIAMEN offer undoped GaAs wafer as follows: No1.Undoped GaAs wafers,2”size Diameter:50.8 mm +/- 0.3 mm Orientation: (100)+/-0.1deg. Semi Insulating, Undoped US Semi Standard Flats Major Flat Length: 17+/-1mm Minor Flat Length: 7+/-1mm Thickness: 350+/-25um Resistivity: >1E7 Ohm*cm Mobility: >=4000 cm2/V*s CC: Not Specified EPD: <=5000 cm-2 1 Side Polished (Ra < 5Å), EPI [...]
Highlights •The thickness of graphene grown on SiC was determined by AES depth profiling. •The AES depth profiling verified the presence of buffer layer on SiC. •The presence of unsaturated Si bonds in the buffer layer has been shown. •Using multipoint analysis thickness distribution of the graphene on [...]
A novel method for estimating threshold voltage shifts of n-channel SiC MOSFETs under negative gate bias stresses has been proposed. In the proposed method, n-type SiC MOS capacitors were utilized instead of n-channel SiC MOSFETs. The n-type SiC MOS capacitors were exposed to ultraviolet [...]
The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is [...]
