PAM XIAMEN offers 60+1mm FZ Si Ingot -6
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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PAM XIAMEN offers MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm. Specifications: Crystal: 0.8 nm MoS2 EPI film on SiO2/Si Si(100) 10×10 x0.5 mm,1sp MoS Film: 0.8nm SiO2=300nm For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, [...]
PAM XIAMEN offers 3″ Diameter Wafer. 3″ Diameter Wafer Ge Wafer Undoped (100) 3″ dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm Ge Wafer Undoped (100) 3″ dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Ge Wafer Undoped (110) 3″ [...]
Highlights •AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation. •The depletion region of structure is amended using a multiple recessed gate. •A gate structure is proposed to be able to control the thickness of the channel. •RF parameters are considered and are improved. In this [...]
PAM XIAMEN offers 3″ Silicon Wafer-16 as follows, while silicon wafer list includes, but not limited to the following. 3″ Si wafer, R≤100Ωcm 1. Diameter: 76.2 ± 0.1mm 2. The type of alloying: P/type boron 3. Orientation (111) ±0.5º 4. Disorientation 4°±0.5º to <110> direction 5. Resistivity: ≤100Ωcm 6. Primary surface: [...]
PAM XIAMEN offers 5″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 5″ 635 ±15 E/E FZ >5,000 p-type Si:B [100] 5″ 889 ±13 P/E FZ >1,000 Prime p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 Warp measured <8μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers n-type Si:P [111] ±0.1° 5″ 200 ±15 BROKEN FZ >3,000 Broken L/L wafers, in 2 pieces n-type Si:P [111] 5″ 300 ±15 P/E FZ 1,000-3,000 SEMI Prime, in [...]
