We can provide 2″ UV LED wafer and AlN wafer for medical & scientific applications including photodynamic therapy also benefit from a high power and high flux density LED.
1. Features & Dimensions of UV LED Wafer
Growth Technique – MOCVD
Substrate Material:Sapphire Substrate (Al2O3)
Substrate Conduction: Insulating
Substrate [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
(mm)
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
FZ
(111) Off 2″ Towards (110)
2k-5k
350-400
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
10-30
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/E
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/P
PRIME
50.8
N
Phos
CZ
-100
225-275
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
225-275
P/P
PRIME
50.8
N
As
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
N
Sb
CZ
-100
.005-.02
250-300
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/WTOx
50.8
N
Phos
FZ
-100
2000-5000
275-325
P/P
PRIME
50.8
N
Phos
CZ
-100
450-500
P/P
PRIME
50.8
N
Phos
CZ
-100
43485
500-550
P/E
PRIME
50.8
N
Phos
CZ
-100
1000-1050
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.
PAM-XIAMEN develops advanced crystal [...]
2019-02-27meta-author
PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates.
Main Parameters
Crystal structure
M4
Unit cell constant
a=5.17 A c=6.26 A
Melt point(℃)
1900
Density
2.62(g/cm3)
Hardness
7.5(mohs)
Size
10×3,10×5,10×10,15×15,20×15,20×20,
Ф15,Ф20,Ф1″,Ф2″, Ф2.6″
Thickness
0.5mm, 1.0mm
Polishing
Single or double side polished
Crystal [...]
2019-03-13meta-author
PAM-XIAMEN offers 4H semi-insulating SiC wafer with vanadium doped or undoped high-purity, semi-insulating, size from 2” to 6”. The transmission rate of 4H semi-insulating silicon carbide with thickness of 353 um, double sides polished is shown as the figure:
Transmission Rate of 4H Semi-insulating SiC Wafer
1. The [...]
2018-08-07meta-author
PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates.
Main Parameters
Crystal structure
M4
Growth method
Czochralski method
Unit cell constant
a=3.756Å c=12.63 Å
Melt point(℃)
1650
Density
5.92(g/cm3)
Hardness
6-6.5(mohs)
Dielectric constants
ε=16.8
Size
10×3,10×5,10×10,15×15,20×15,20×20
Ф15, [...]
2019-03-14meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN‘s product line.
Dr. Shaka, [...]
2018-02-13meta-author