PAM XIAMEN offers 60+1mm FZ Si Ingot -6
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
We can provide 2″ UV LED wafer and AlN wafer for medical & scientific applications including photodynamic therapy also benefit from a high power and high flux density LED. 1. Features & Dimensions of UV LED Wafer Growth Technique – MOCVD Substrate Material:Sapphire Substrate (Al2O3) Substrate Conduction: Insulating Substrate [...]
PAM XIAMEN offers 2″ Silicon Wafer. Diameter (mm) Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 50.8 N Phos FZ (111) Off 2″ Towards (110) 2k-5k 350-400 P/E PRIME 50.8 N Phos CZ -100 1-20 10-30 P/P PRIME 50.8 N Phos CZ -100 1-20 40-60 P/P PRIME 50.8 N Phos CZ -100 1-20 80-100 P/P PRIME 50.8 N Phos CZ -100 1-20 140-160 P/P PRIME 50.8 N Phos FZ -100 >1000 200-500 P/E PRIME 50.8 N Phos FZ -100 >1000 200-500 P/P PRIME 50.8 N Phos CZ -100 225-275 P/P PRIME 50.8 N Phos FZ -100 >3000 225-275 P/P PRIME 50.8 N As CZ -100 .001-.005 250-300 P/E PRIME 50.8 N Sb CZ -100 .005-.02 250-300 P/P PRIME 50.8 N Phos FZ -100 >3000 250-300 P/E PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/DTOx PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/Ni PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/WTOx 50.8 N Phos FZ -100 2000-5000 275-325 P/P PRIME 50.8 N Phos CZ -100 450-500 P/P PRIME 50.8 N Phos CZ -100 43485 500-550 P/E PRIME 50.8 N Phos CZ -100 1000-1050 P/E PRIME 50.8 N Phos CZ -100 1-20 2900-3100 P/E PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal [...]
PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates. Main Parameters Crystal structure M4 Unit cell constant a=5.17 A c=6.26 A Melt point（℃） 1900 Density 2.62（g/cm3） Hardness 7.5（mohs） Size 10×3，10×5，10×10，15×15，20×15，20×20， Ф15,Ф20，Ф1″，Ф2″, Ф2.6″ Thickness 0.5mm, 1.0mm Polishing Single or double side polished Crystal [...]
PAM-XIAMEN offers 4H semi-insulating SiC wafer with vanadium doped or undoped high-purity, semi-insulating, size from 2” to 6”. The transmission rate of 4H semi-insulating silicon carbide with thickness of 353 um, double sides polished is shown as the figure: Transmission Rate of 4H Semi-insulating SiC Wafer 1. The [...]
PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates. Main Parameters Crystal structure M4 Growth method Czochralski method Unit cell constant a=3.756Å c=12.63 Å Melt point（℃） 1650 Density 5.92（g/cm3） Hardness 6-6.5（mohs） Dielectric constants ε=16.8 Size 10×3，10×5，10×10，15×15，20×15，20×20 Ф15, [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN‘s product line. Dr. Shaka, [...]
