PAM XIAMEN offers 60+1mm FZ Si Ingot -6
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers InAs Indium Arsenide Single Crystal. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaicphotodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium [...]
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates. PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness [...]
N-Type Silicon Substrates PAM XIAMEN offers n-type silicon wafers in stock. N-type Silicon 50.8mm N-type Arsenic Doped (100) 0.001-0.005 ohm-cm 280um SSP In stock 76.2mm N-type Phosphorous Doped (100) 1-10 ohm-cm 380um SSP In stock 100mm N-type Phosphorus Doped (100) 10-20 ohm-cm 280um DSP In stock 150mm N-type Antimony Doped [...]
PAM XIAMEN offers MgAl2O4 Magnesium Aluminate Crystal substrate. Magnesium aluminate (spinel) single crystals are widely used in ultrasonic and microwave material and device related epitaxial growth. We also offer polycrystalline spinel optical windows. Crystal Structure: Cubic Lattice parameter: a = 8.085 A Melting point (℃): 2130℃ Density: 3.64 g/cm3 Hardness: 8 Mohs Available orientations: <100>, <111>, <110> [...]
PAM XIAMEN offers 6″ FZ Silicon Ingot with Diameter 150.7±0.3mmØ Silicon ingot, per SEMI, G 150.7±0.3mmØ FZ p-type Si:B[110]±2.0° Ro > 1,000 Ohmcm Ground Ingot NO Flats NOTE: Oxygen<1E16/cc, Carbon<1E16/cc MCC Lifetime>1,000µs For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
