PAM XIAMEN offers 60+1mm FZ Si Ingot -6
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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PAM-XIAMEN can offer 2&3 inches P-type GaAs substrates. Gallium arsenide (GaAs) is a III-V type direct band gap semiconductor with a zinc blend crystal structure, and GaAs p-type dopant is commonly used as a substrate for epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium [...]
PAM XIAMEN offers 4″ Epitaxial Silicon Wafer. If necessary, we can do SRP (spreading resistance profile) test for you. Item Parameter Spec Unit 1 Growth Method CZ 2 Diameter 100+/-0.5 mm 3 Type-Dopant P- Boron 4 Resistivity 0.002 – 0.003 ohm-cm 5 Resistivity Radial Variation <10 % 6 Crystal Orientation <111> 4 +/- 0.5 degree 7 Primary Flat Orientation Semi degree Length Semi mm 8 Secondary Flat Orientation Semi degree Length semi mm 9 Thickness 525 +/- 25 μm 10 TTV ≦10 μm 11 Bow ≦40 μm 12 Warp ≦40 μm 13 Front Surface polished 14 Backside etched — 5000 +/-10% Angstoms SiO2 15 Surface Appearance no Cratches, haze, edge chips, orange peel, defects,contamination — 16 Edge [...]
PAM XIAMEN offers KH2PO4 crystal. KH2PO4 (100), 10x10x 1.0 mm 1 Side polished Crystal: Monopotassium Phosphate Orientation: <100> Size: 10 x 10 x 0.9 mm Polished: one side polished Package: 1000 class clean plastic bag sealed Applications: Monopotassium Phosphate crystal [...]
PAM XIAMEN offers Ga2O3 Beta Gallium Oxide Wafer and crystal Substrates SEMI-insulating type. SPECIFICATIONS: Crystal structure: Monoclinic Lattice parameter: a = 12.225 A b = 3.040 A c = 5.809 A β = 103.7 degree Melt point (℃): 1725 Density: 5.95（g/cm3） Dielectric constants: 10 Band Gap: 4.8 – 4.9 eV Conductivity: Semi-insulating Breakdown Voltage (V/cm): 8 MV/cm Available Size: 5 x 5 mm, 10 x 10 mm，Ф1″ (1 inch diameter). Special [...]
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-3 6″ FZ Si wafer, 75pcs Orientation: (100)±0.5 Type/Dopant: n/phosphorus Resistivity: 1-5 Ω-cm Life time : > 1000 μs Thickness: 400 ± 25 μm Carbon (atm/cm3): <2.0 x 1016 Oxygen (atm/cm3): < 2 x 1016 Diameter: 150 mm Primary flat: Semi Std Secondary flat: not essential Front and back side Finish: [...]
The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing [...]
