PAM XIAMEN offers 60+1mm FZ Si Ingot -6
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
N-Type Silicon Substrates PAM XIAMEN offers n-type silicon wafers in stock. N-type Silicon 50.8mm N-type Arsenic Doped (100) 0.001-0.005 ohm-cm 280um SSP In stock 76.2mm N-type Phosphorous Doped (100) 1-10 ohm-cm 380um SSP In stock 100mm N-type Phosphorus Doped (100) 10-20 ohm-cm 280um DSP In stock 150mm N-type Antimony Doped [...]
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″{100.0±0.2}Ø×500±15µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
PAM XIAMEN offers Sodium-bismuth tungstate (NaBi(WO4)2. Sodium-bismuth tungstate (NaBi(WO4)2 or NBWO) is a scintillator material possessing very high optical quality, high density and radiation hardness. Due to these properties NBWO crystals are widely used in quantum electronics, acousto-optics and high-energy physics, in particular, in [...]
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was [...]
AlxIn1-xP is a ternary semiconductor material grown with X composition in the range of 0.5~0.52, which is lattice matched to GaAs. AlxIn1-xP is commonly used as a window layer in high-bandgap III-V solar cells, where it is responsible for reducing surface recombination by reflecting [...]
PAM XIAMEN offers Pyrolytic Graphite Substrate. Pyrolytic Graphite is a unique form of graphite manufactured by decomposition of a hydrocarbon gas at very high temperature in a vacuum furnace. It is nucleated on substrate and grown with texture along C axis . The result is an [...]
