PAM XIAMEN offers 60+1mm FZ Si Ingot -6
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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PAM XIAMEN offers LaAlO3 single crystal. LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well [...]
Silicon carbide (SiC) materials have significant advantages in key characteristics such as bandgap width and critical breakdown field strength, and can be used to make high voltage Schottky diodes. Currently, 650V-1700V SiC Schottky diodes are widely used in consumer, industrial, automotive and other fields. Schottky [...]
PAM XIAMEN offers 6″ Prime EPI Wafer. 6″ EPI Wafer diameter: 6″ (150 +-0,5 mm) orientation: <100> primary flat length: 57.5mm+/-2.5mm primary flat: <110> +/- 1 no secondary flat overall thickness 280-325μm TTV <10um WARP/BOW <50um TIR <3um EPI layer: -type: n -dopant: P [...]
LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure [...]
PAM-XIAMEN offers A Plane N-GaN Freestanding GaN Substrate Item PAM-FS-GAN A-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW -10 µm ≤ BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-PA03 series are pixel electrode structured detectors based on CZT crystal. 1. CZT Compton Imaging Detector Specification Material CdZnTe Density 5.8g/cm3 Volume resistivity >1010Ω.cm Dimension 22.0×22.0 mm2 Thickness 15.0mm Pixel size 1.38×1.38 mm2 Pixel center space 1.88mm Pixel array 11×11 Electrode material Au Operation temperature 25℃-+40℃ Energy range 60KeV~2.6MeV Energy resolution(22℃) Average pixel <5%@662KeV Storage temperture 10℃~40℃ Storage humidity 20%-80% 2. Spectrum of CZT Compton Imager 3. Features Compton Imaging Detector Based on CZT Crystal Long-time stability High energy [...]
