PAM XIAMEN offers MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm.
Specifications:
Crystal: 0.8 nm MoS2 EPI film on SiO2/Si
Si(100) 10×10 x0.5 mm,1sp
MoS Film: 0.8nm
SiO2=300nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-28meta-author
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm.
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-03meta-author
PAM XIAMEN offers 3″ Diameter Wafer.
3″ Diameter Wafer
Ge Wafer Undoped (100) 3″ dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm
Ge Wafer Undoped (100) 3″ dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm
Ge Wafer Undoped (110) 3″ [...]
2019-04-25meta-author
Highlights
•AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation.
•The depletion region of structure is amended using a multiple recessed gate.
•A gate structure is proposed to be able to control the thickness of the channel.
•RF parameters are considered and are improved.
In this [...]
PAM XIAMEN offers 3″ Silicon Wafer-16 as follows, while silicon wafer list includes, but not limited to the following.
3″ Si wafer, R≤100Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: P/type boron
3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> direction
5. Resistivity: ≤100Ωcm
6. Primary surface: [...]
2019-11-20meta-author
PAM XIAMEN offers 5″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
5″
635 ±15
E/E
FZ >5,000
p-type Si:B
[100]
5″
889 ±13
P/E
FZ >1,000
Prime
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
Warp measured <8μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers
n-type Si:P
[111] ±0.1°
5″
200 ±15
BROKEN
FZ >3,000
Broken L/L wafers, in 2 pieces
n-type Si:P
[111]
5″
300 ±15
P/E
FZ 1,000-3,000
SEMI Prime, in [...]
2019-03-05meta-author