PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):
1. Wafer List:
2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single [...]
2019-03-11meta-author
Some customers worry about that when they transfer LED onto other substrates using laser liftoff, these patterns of LED wafer on patterned sapphire substrate. PSS will scatter the laser. In fact, some of our customers also use 4” epi wafers on PSS for LLO, [...]
2021-03-22meta-author
PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates.
Main Parameters
Growth Method
orthogonal
Unit cell constant
a=5.43、b=5.50、c=7.71
Melt point(℃)
1600℃
Density
7.57g/cm3
Dielectric constants
25
Growth method
hanging maneuver method
Size
10×3, 10×5, 10×10, [...]
2019-03-14meta-author
Single crystal germanium wafer with orientation (110) miscut toward <111> with 4 deg. or 12 deg. is provided without dopant. Due to the similar chemical properties with silicon, single crystal germanium has similar applications. While hall effect germanium wafer has higher sensitivity to gamma [...]
2021-10-25meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ NTD 3″Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI
FZ 8″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm)
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs,
FZ 6″Ø ingot p-type [...]
2019-03-08meta-author
Cree Recalls 112,500 LED T8 Tube Lights in North America Over Burn Hazard
Recall date: AUGUST 25, 2016
Recall number: 16-252
Recall Summary
Name of product:
Cree® LED T8 Replacement Lamps
Hazard:
The recalled lamps can overheat and melt, posing a burn hazard.
Cree LED tube lights being recalled in North America. (Cree/LEDinside)
Remedy:
View Details
Refund
Consumer [...]
2016-08-30meta-author