650 RC LED Wafer

650 RC LED Wafer

PAM-XIAMEN offers 650 RC LED Wafer. RC LED – resonant cavity light emitting diode refers to a new type of light-emitting diode structure, which can be regarded as a combination of VCSEL and LED, and have the advantages of both. Now, it is mostly used in the field of optical fiber communication.The application advantages of RC LED with an emission wavelength of 650nm in the field of plastic optical fiber (POF) communication can be used as the first choice for light emitting devices for civil data communication systems.[Sources:1] The specific structure of the RC LED wafer is listed as follows:

1. RC LED Wafer Structure

No.1 660 RC LED Wafer (PAMP21138-660LED)

660 RC LED Wafer Structure
Structure Thickness
P-GaP ohmic contact layer
P-GaP current spreading layer
P-AlGaInP transition layer 450
P-AIP restriction layer
(AlxGa1-x)0.5In0.5P waveguide layer
MQW (AlGaInP )
(AlxGa1-x)0.5In0.5P waveguide layer
N-AIP restricted layer
N-(AlxGa1-x)0.5In0.5P extension layer
N-(AlxGa1-x)0.51n0.5P roughened layer
GaInP anti-digging electrode layer
GaAs ohmic contact layer 800
GaInP corrosion stop
GaAs Substrate


No.2 650nm RCLED Wafer Structure (PAM190304 – 650LED)

Layer Structure Thickness
P+ GaP (for ITO)
P GaP 2um
P AlGaAs/AlAs DBR X??
N AlGaAs/AlAs DBR X??
N GaAs buffer
N GaAs substrate (15 degree off)  

2. Advantages of RC LED Wafer

Compared with traditional LEDs, resonant cavity light-emitting diodes fabricated on GaAs epi wafer with resonant cavity design enable the emitted light to have higher light intensity, efficiency, modulation bandwidth, and better directivity, spectral purity, temperature reliability. Although VCSELs have better luminous intensity and far-field performance, and are excellent in the aspects of luminous intensity, light directionality, and circular spot symmetry, the process is complex and subject to threshold limits. In recent years, red RC LED wafers with emission wavelengths of 650 nm are expected to be further used in emerging technology fields, like the face recognition module of micro device.




[1]Lee C. E.,Lee Y. C.,Kuo H. C.,et al.High-Temperature Stability of 650-nm Resonant-Cavity Light-Emitting Diodes Fabricated Using Wafer-Bonding Technique on Silicon Substrates[J].IEEE Photonics Technology Letters,2007,19(14).

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

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