PAM-XIAMEN offers 650V GaN FETs chip for fast charge. In current market, gallium nitride fast charging sources mainly use 650V GaN chip (GaN FETs) as power switches, and the high-frequency characteristics of gallium nitride are used to make terminal fast charging products smaller in size and higher in efficiency.

The PAM65D150DNBI-TS series 650V, 150mΩ gallium nitride(GaN) FETs are normally-on devices. PAM-XIAMEN GaN chip offers better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon(Si) devices. PAM-XIAMEN is one of leading-edge GaN chip makers with world-class innovation.

1. Parameters of 650V GaN FETs Chip

Symbol	Parameter	Limit value	Unit
RθJC	Junction-to-case	1.3	°C /W

 

1.1 Absolute Maximum Ratings of 650V GaN FETs Chip (TC=25°C unless otherwise stated)

Symbol	Parameter		Limit value	Unit
VDSS	Drain to source voltage		650	V
VDSS	Gate to source voltage		一25~+2
ID	Continuous drain current @TC=25°C		15	A
	Continuous drain current @TC=100°C		10
IDM	Pulse drain current		65	A
PD	Maximum power dissipation @ TC=25°C		65	W
TC	Operating temperature	Case	一55~150	°C
TJ		Junction	一55~175	°C
TS	Storage temperature		一55~150	°C

 

 

 

 

 

 

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1.2 Electrical Parameters of 650V GaN Chipset (TJ=25°C unless otherwise stated)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
Forward Device Characteristics
V(BL)DSs	Drain-source voltage	—	650	—	v	Vcs=-25V
Vasth)	Gate threshold voltage	—	-18	—	v	VDs=Vas,IDs=luA
RDS(on)	Drain-source on-resistance	—	150	180	mQ	Vcs=OV,ID-10A
		—	—	—		VGs=OV, ID-10A,TJ=150’C
lDss	Drain-to-source leakage current	—	—	3	uA	VDs=650V,VGs=-25V
		—	—	30		VDs=400V,VGs=-25V, T=150’c
lass	Gate-to-source forward leakage current	—	3.7	100	nA	VGs=2V
	Gate-to-source reverse leakage current	—	-3.5	-100		VGS=-25V
CIss	Input capacitance	—	650	—	pF	vGs=-25V,VDS=300V,f=1MHz
Coss	Output capacitance	—	40	—
CRSS	Reverse capacitance	—	10	—
QG	Total gate charge	—	9	—	nC	VDS=200V,VGS=-25V to ov, ID=10A
QGS	Gate-source charge	—	2	—
QGD	Gate-drain charge	—	7	—
tn	Reverse recovery time	—	4	—	ns	Is=0A to 11A,VDD=400V di/dt=1000A/uS
Q.	Reverse recovery charge	—	17	—	nC	—
TIX(on)	Turn-on delay	—	0.5	—	—	VDs=200VVG=-25V to ov, ID=10A
tR	Rise time	—	9	—
tD(off)	Turn-off delay	—	0.5	—
tF	Fall time	—	10	—
Reverse Device Charactcristics
VSD	Reverse voltage	—	7	—	v	VGS=-25V,Is=10A,Tc=25′ C

 

1.3 Typical Characteristics of 650V GaN Charger Chip (TJ=25°C unless otherwise stated)

                 

1.4 Test Circuit and Waveforms of 650V GaN Power Chip

   

 

 

 

 

 

 

 

 

 

 

1.5 PACKAGE DIMENSIONS of 650V GaN Chip

           

 

 

 

 

 

 

 

 

 

 

ITEM	I.ow 1imit (mm)	Center (mm)	Upper 1imit (mm)
A	0.80	—	1.00
A1	0	—	0.05
A2	0.15	0.25	0.35
b	0.9	1	1.1
D	7.9	8	8.1
D1	6.9	7	7.1
D2	0.4	0.5	0.6
D3	7.1	7.2	7.3
D4	0.3	0.4	0.5
E	7.9	8	8.1
E1	0.3	0.4	0.5
E2	4.25	4.35	4.45
E3	2.65	2.75	2.85
e	1.9	—	2.1
L	0.4	0.5	0.6

 

2. General Features of 650V GaN Power FETs

Easy to drive—compatible with standard gate drivers
Low conduction and switching losses
Low Qrr of 17nC—no free-wheeling diode
required
RoHS compliant and Halogen-free

 

3. Automotive of 650V GaN FETs Chip

Fast charger
Renewable energy
Telecom and data-com
Servo motors
Industrial
Automotive

4. Benefits of 650V GaN Chip

Increased efficiency through fast switching
Increased power density
Reduced system size and weight

As a representative of the third generation of semiconductor materials, when gallium nitride is used in fast charging devices, the output power of GaN chip devices is three times that of traditional materials in the case of the same size. GaN FET technology is redefining the standard for fast charging of mobile phones. The third-generation semiconductor industry is also ushering in new developments due to the application of gallium nitride.

For more information, please contact us email at [email protected] and [email protected]