PAM-XIAMEN offers 650V GaN FETs Chip for Fast Charge
The PAM65D150DNBI-TS eries 650V,150mΩ gallium nitride(GaN) FETs are normally-on devices.PAM-XIAMEN GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over
Traditiona lsilicon(Si) devices. PAM-XIAMEN is a leading-edge wide bandgap supplier with world-class innovation.
1.Parameters of 650V GaN FETs Chip
| Symbol | Parameter | Limit value | Unit |
| RθJC | Junction-to-case | 1.3 | °C /W |
1.1AbsoluteMaximumRatings of 650V GaN FETs Chip (TC=25°C unless otherwise stated)
| Symbol | Parameter | Limit value | Unit | |
| VDSS | Drain to source voltage | 650 | V | |
| VDSS | Gate to source voltage | 一25~+2 | ||
| ID | Continuous drain current @TC=25°C | 15 | A | |
| Continuous drain current @TC=100°C | 10 | |||
| IDM | Pulse drain current | 65 | A | |
| PD | Maximum power dissipation @ TC=25°C | 65 | W | |
| TC | Operating temperature | Case | 一55~150 | °C |
| TJ | Junction | 一55~175 | °C | |
| TS | Storage temperature | 一55~150 | °C | |
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1.2 Electrical Parameters of 650V GaN FETs Chip (TJ=25°C unless otherwise stated)
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Forward Device Characteristics | ||||||
| V(BL)DSs | Drain-source voltage | — | 650 | — | v | Vcs=-25V |
| Vasth) | Gate threshold voltage | — | -18 | — | v | VDs=Vas,IDs=luA |
| RDS(on) | Drain-source on-resistance | — | 150 | 180 | mQ | Vcs=OV,ID-10A |
| — | — | — | VGs=OV, ID-10A,TJ=150’C | |||
| lDss | Drain-to-source leakage current |
— | — | 3 | uA | VDs=650V,VGs=-25V |
| — | — | 30 | VDs=400V,VGs=-25V, T=150’c |
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| lass | Gate-to-source forward leakage current |
— | 3.7 | 100 | nA | VGs=2V |
| Gate-to-source reverse leakage current |
— | -3.5 | -100 | VGS=-25V | ||
| CIss | Input capacitance | — | 650 | — | pF | vGs=-25V,VDS=300V,f=1MHz |
| Coss | Output capacitance | — | 40 | — | ||
| CRSS | Reverse capacitance | — | 10 | — | ||
| QG | Total gate charge | — | 9 | — | nC | VDS=200V,VGS=-25V to ov, ID=10A |
| QGS | Gate-source charge | — | 2 | — | ||
| QGD | Gate-drain charge | — | 7 | — | ||
| tn | Reverse recovery time | — | 4 | — | ns | Is=0A to 11A,VDD=400V di/dt=1000A/uS |
| Q. | Reverse recovery charge | — | 17 | — | nC | — |
| TIX(on) | Turn-on delay | — | 0.5 | — | — | VDs=200VVG=-25V to ov, ID=10A |
| tR | Rise time | — | 9 | — | ||
| tD(off) | Turn-off delay | — | 0.5 | — | ||
| tF | Fall time | — | 10 | — | ||
| Reverse Device Charactcristics | ||||||
| VSD | Reverse voltage | — | 7 | — | v | VGS=-25V,Is=10A,Tc=25′ C |
1.3 Typical Characteristics of 650V GaN FETs Chip (TJ=25°C unless otherwise stated)
1.4 Test Circuit and Waveforms of 650V GaN FETs Chip
1.5 PACKAGE DIMENSIONS of 650V GaN FETs Chip
| ITEM | I.ow 1imit (mm) |
Center (mm) |
Upper 1imit (mm) |
| A | 0.80 | — | 1.00 |
| A1 | 0 | — | 0.05 |
| A2 | 0.15 | 0.25 | 0.35 |
| b | 0.9 | 1 | 1.1 |
| D | 7.9 | 8 | 8.1 |
| D1 | 6.9 | 7 | 7.1 |
| D2 | 0.4 | 0.5 | 0.6 |
| D3 | 7.1 | 7.2 | 7.3 |
| D4 | 0.3 | 0.4 | 0.5 |
| E | 7.9 | 8 | 8.1 |
| E1 | 0.3 | 0.4 | 0.5 |
| E2 | 4.25 | 4.35 | 4.45 |
| E3 | 2.65 | 2.75 | 2.85 |
| e | 1.9 | — | 2.1 |
| L | 0.4 | 0.5 | 0.6 |
2.General Features of 650V GaN FETs Chip
Easy to drive—compatible with standard gate drivers
Low conduction and switching losses
Low Qrr of 17nC—no free-wheeling diode
required
RoHS compliant and Halogen-free
3.Automotive of 650V GaN FETs Chip
Fast charger
Renewable energy
Telecom and data-com
Servo motors
Industrial
Automotive
4.Benefits of 650V GaN FETs Chip
Increased efficiency through fast switching
Increased power density
Reduced system size and weight
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com