650V GaN FETs Chip for Fast Charge

PAM-XIAMEN offers 650V GaN FETs Chip for Fast Charge

The PAM65D150DNBI-TS eries 650V,150mΩ gallium nitride(GaN) FETs are normally-on devices.PAM-XIAMEN GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over
Traditiona lsilicon(Si) devices. PAM-XIAMEN is a leading-edge wide bandgap supplier with world-class innovation.

1.Parameters of 650V GaN FETs Chip

Symbol Parameter Limit value Unit
RθJC Junction-to-case 1.3 °C /W

 

1.1AbsoluteMaximumRatings of 650V GaN FETs Chip (TC=25°C unless otherwise stated)

Symbol Parameter Limit value Unit
VDSS Drain to source voltage 650 V
VDSS Gate to source voltage 一25~+2
ID Continuous drain current @TC=25°C 15 A
Continuous drain current @TC=100°C 10
IDM Pulse drain current 65 A
PD Maximum power dissipation @ TC=25°C 65 W
TC Operating temperature Case 一55~150 °C
TJ Junction 一55~175 °C
TS Storage temperature 一55~150 °C

 

650V GaN FETs Chip for Fast Charge

 

 

 

 

 

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1.2 Electrical Parameters of 650V GaN FETs Chip (TJ=25°C unless otherwise stated)

Symbol Parameter Min Typ Max Unit Test Conditions
Forward Device Characteristics
V(BL)DSs Drain-source voltage 650 v Vcs=-25V
Vasth) Gate threshold voltage -18 v VDs=Vas,IDs=luA
RDS(on) Drain-source on-resistance 150 180 mQ Vcs=OV,ID-10A
VGs=OV, ID-10A,TJ=150’C
lDss Drain-to-source leakage
current
3 uA VDs=650V,VGs=-25V
30 VDs=400V,VGs=-25V,
T=150’c
lass Gate-to-source forward
leakage current
3.7 100 nA VGs=2V
Gate-to-source reverse
leakage current
-3.5 -100 VGS=-25V
CIss Input capacitance 650 pF vGs=-25V,VDS=300V,f=1MHz
Coss Output capacitance 40
CRSS Reverse capacitance 10
QG Total gate charge 9 nC VDS=200V,VGS=-25V to ov,
I
D=10A
QGS Gate-source charge 2
QGD Gate-drain charge 7
tn Reverse recovery time 4 ns Is=0A to 11A,VDD=400V
di/dt=1000A/uS
Q. Reverse recovery charge 17 nC
TIX(on) Turn-on delay 0.5 VDs=200VVG=-25V to ov,
ID=10A
tR Rise time 9
tD(off) Turn-off delay 0.5
tF Fall time 10
Reverse Device Charactcristics
VSD Reverse voltage 7 v VGS=-25V,Is=10A,Tc=25′ C

 

1.3 Typical Characteristics of 650V GaN FETs Chip (TJ=25°C unless otherwise stated)

650V GaN FETs Chip for Fast Charge

 

 

 

 

 

 

 

 

 

650V GaN FETs Chip for Fast Charge                 650V GaN FETs Chip for Fast Charge

 

 

 

 

 

 

 

 

 

1.4 Test Circuit and Waveforms of 650V GaN FETs Chip

1.4 Test Circuit and Waveforms of 650V GaN FETs Chip     1.4 Test Circuit and Waveforms of 650V GaN FETs Chip

 

 

 

 

 

 

 

1.4 Test Circuit and Waveforms of 650V GaN FETs Chip   650V GaN FETs Chip for Fast Charge

 

 

 

 

 

 

 

 

 

1.5 PACKAGE DIMENSIONS of 650V GaN FETs Chip

650V GaN FETs Chip for Fast Charge           650V GaN FETs Chip for Fast Charge

 

 

 

 

 

 

 

650V GaN FETs Chip for Fast Charge

 

 

 

ITEM I.ow
1imit
(mm)
Center
(mm)
Upper
1imit
(mm)
A 0.80 1.00
A1 0 0.05
A2 0.15 0.25 0.35
b 0.9 1 1.1
D 7.9 8 8.1
D1 6.9 7 7.1
D2 0.4 0.5 0.6
D3 7.1 7.2 7.3
D4 0.3 0.4 0.5
E 7.9 8 8.1
E1 0.3 0.4 0.5
E2 4.25 4.35 4.45
E3 2.65 2.75 2.85
e 1.9 2.1
L 0.4 0.5 0.6

2.General Features of 650V GaN FETs Chip

Easy to drive—compatible with standard gate drivers
Low conduction and switching losses
Low Qrr of 17nC—no free-wheeling diode
required
RoHS compliant and Halogen-free

 

3.Automotive of 650V GaN FETs Chip

Fast charger
Renewable energy
Telecom and data-com
Servo motors
Industrial
Automotive

4.Benefits of 650V GaN FETs Chip

Increased efficiency through fast switching
Increased power density
Reduced system size and weight

 

 

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

 

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