Q: What is the highest temperature and the highest thermal shock that the wafers can withstand?

A: At the temperatures higher than 1000 C on the free surface of Si-face of 6H-SiC (0001) the carbon segregation properties are started so that during short time the thin carbon layer is appeared due to Si escape from surface layer. (If the heatihg on the air, the carbon interacts with oxygen and carbon layer is not appeared, only oxide layer (SiO2) formed.) On the C-face (000-1), this processes are started from 600-700 C.Near the pipes, these properties can be started at the more low temperatures!