PAM XIAMEN offers 6″CZ Prime Silicon Wafer-2
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers high-quality Bi2Te3 single crystal. Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride. It is a semiconductor which, when alloyed with antimony or selenium is an efficient thermoelectric material for [...]
PAM-XIAMEN offers p type electronic grade Germanium (Ge) wafer. Germanium is a chemical element. Its chemical symbol is Ge. Its atomic number is 32 and the atomic weight is 72.64, belonging to the IVA group elements. So the germanium electron configuration must have 32 [...]
PAM-XIAMEN can offer UV LED epi wafer, which is grown by our MOCVD range from 275nm to 405nm. Ultraviolet electromagnetic radiation, commonly known as UV, is used in many industries and applications. The emerging UV LED will be a competitive technology that can drive new innovative applications. UV-LED has [...]
Highlights •The performance of colloidal silica and ceria based slurries on CMP of 6H-SiC substrates were evaluated. •There was a significant difference in the CMP performance of 6H-SiC between silica and ceria based slurries. •For the ceria based slurries, a higher MRR was obtained, especially in strong [...]
PAM XIAMEN offers CeO2 Epi Film on YSZ. CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm Epitaxial thin Film Composition <100> CeO2 Epitaxial Film Thickness 40 nm +/- 10 nm Growth method Spin coating Epitaxial FWHM < 5 o Substrate <100>, YSZ, 10x10x0.5 mm, one side polished CeO2 Film (40 nm one side) on YSZ [...]
GaN Epitaxial Technology GaN technology today is important technology player- Gallium Nitride on Silicon Carbide (GaN on SiC), Gallium Nitride on Silicon (GaN on Si) and Gallium Nitride on Sapphire (GaN on Sapphire). They are used in LED, RF and microwave devices. We can see [...]
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