PAM XIAMEN offers 6″CZ Prime Silicon Wafer-2
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at [email protected] and [email protected]
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ FZ silicon ignot. Silicon ingot, per SEMI, G 100.7±0.3mmØ, FZ Intrinsic undoped Si:-[111]±2.0°, Ro > 25,000 Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [...]
PAM XIAMEN offers SBN crystal. Strontium-Barium Niobate (SrxBa(1-x)Nb2O6) SBN crystal is an excellent optical and photorefractive material due to its excellent photorefractive, electro-optic, nonlinear optic, and dielectric properties. SBN crystal has a very large electro-optic coefficient up to 1400 pm/V. and is potential crystal [...]
For non-cubic crystals, they are inherently anisotropic, that is, different directions have different properties. Take the silicon carbide crystal faces for example as below: The space groups of 4H-SiC and 6H-SiC are P63mc, and the point group is 6mm. Both belong to the hexagonal system [...]
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ). PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation. 10×10 mm substrates [...]
IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased [...]
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]