PAM XIAMEN offers 6″CZ Prime Silicon Wafer
Item7, 50pcs
Silicon wafer:
i. Diameter: 150 mm ± .5 mm,
ii. Thickness: 675μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at [email protected] and [email protected]
What is silicon made of? Silicon is made from silicon dioxide, or silica – found in nature as quartz, or common beach sand. First, the silica is put into a Silicon Furnace, where a carbon electrical arc reacts at high temperatures to drive the oxygen out [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs Epi wafer and other related products and services announced the new availability of size 2″-4” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, [...]
Epitaxial GaN template grown on Al2O3 (sapphire) substrate and customizable stacks are available with high quality and low defect density. Attached are a list of several types of GaN thin film on sapphire substrate wafers with different thicknesses, carrier types, and capping layers that [...]
PAM XIAMEN offers MgAl2O4 Magnesium Aluminate Crystal substrate. Magnesium aluminate (spinel) single crystals are widely used in ultrasonic and microwave material and device related epitaxial growth. We also offer polycrystalline spinel optical windows. Crystal Structure: Cubic Lattice parameter: a = 8.085 A Melting point (℃): 2130℃ Density: 3.64 g/cm3 Hardness: 8 Mohs Available orientations: <100>, <111>, <110> [...]
Getting to 450 mm Wafer Sooner As device circuits continue to get smaller, the wafers that they are made from are getting larger — again. A few years ago device manufacturers — both vertically integrated companies and independent foundries — pushed maximum wafer diameters from [...]
PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow: 1. Specifications of GaAs Epiwafer with AlGaAs Multilayers VCSEL, 980nm, GaAs epiwafer, 4″size PAM210208 Layer No. Material Group Repeat Mole Fraction(x) Strain(ppm) PL(nm) Thickness(nm) Dopant 32 GaAs – – – – – 156 C 31 Al(x)GaAs – – 0.04 – – 50.5 C 30 Al(x)GaAs – – 0.87->0.04 – – 20 C 29 Al(x)GaAs – – 0.87 – – 59.7 C 28 Al(x)GaAs – 16 0.04->0.87 – – 20 C 27 Al(x)GaAs – 0.04 – – 51.5 C 26 Al(x)GaAs – 0.87->0.04 – – 20 C 25 Al(x)GaAs – 0.87 – – 59.7 C 24 Al(x)GaAs – – 0.04->0.87 – – 20 C 23 Al(x)GaAs – – 0.04 – – 32.9 C 22 Al(x)GaAs – – 0.80->0.04 – – 20 C 21 Al(x)GaAs – – 0.98 – – 20 C 20 Al(x)GaAs – – 0.8 – – 61.6 C 19 GaAsP – – – – – – UD 18 In(x)GaAs – – – – 970nm – UD 17 GaAsP – – – – – – UD 16 In(x)GaAs – – – – 970nm – UD 15 GaAsP – – – – – – UD 14 In(x)GaAs – – – – 970nm – UD 13 GaAsP – – – – – – UD 12 Al(x)GaAs – – 0.87 – – 59.7 Si 11 Al(x)GaAs – – 0.04->0.87 – – 20 Si 10 Al(x)GaAs – – 0.04 – – 51.5 Si 9 Al(x)GaAs – – 0.87->0.04 – – 20 Si 8 Al(x)GaAs – 6 0.87 – – 59.7 Si 7 Al(x)GaAs – 0.04->0.87 – – 20 Si 6 Al(x)GaAs – 0.04 – – 51.5 Si 5 Al(x)GaAs – 30 0.92->0.04 – – 20 Si 4 Al(x)GaAs – 0.92 – – 59.8 Si 3 Al(x)GaAs – 0.04->0.92 – – 20 Si 2 Al(x)GaAs – 0.04 – – 51.5 Si 1 GaAs – – – – – 500 Si 4 inch GaAs substrate Si doped; [...]
