PAM XIAMEN offers 6″CZ Prime Silicon Wafer
Item7, 50pcs
Silicon wafer:
i. Diameter: 150 mm ± .5 mm,
ii. Thickness: 675μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at [email protected] and [email protected]ail.com
PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>. 2″ Diameter Wafer 2″ Wafers <211> Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm For more information, [...]
PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal. Crystal Structure /Lattice Constant(A) MP oC Density, g/cm3 Growth Tech DyScO3 Orthorombic a=5.44 b=5.71 c=7.89 2127 6.9 CZ GdScO3 Orthorombic a=5.45 b=5.75 c=7.93 2127 6.6 CZ TbScO3 Orthorhombic, a = 5.4543, b = 5.7233 c = 7.9147 2127 6.6 CZ DyScO3 (110) 5x5x0.5mm 1sp (PAM210322-DYSCO3) DyScO3 (110) 5x5x0.5mm 1sp” DyScO3 (110) 5x5x0.5mm 2sp DyScO3 (110) 10x10x0.5mm 1sp DyScO3 (110) 10x10x0.5mm 2sp DyScO3 (001) 10x10x0.5mm 1sp [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [111-2.5°] 3″ 300 P/E 0.014-0.018 SEMI Prime n-type Si:Sb [111-3.5°] 3″ 380 P/E 0.014-0.016 SEMI Prime n-type Si:Sb [111-3°] 3″ 300 P/E 0.011-0.016 SEMI Prime n-type Si:Sb [111] ±0.5° 3″ 300 P/P 0.01-0.20 SEMI Prime n-type Si:Sb [111] 3″ 380 P/E 0.008-0.025 SEMI Prime n-type Si:As [111-0.5°] 3″ 380 P/P 0.003-0.005 SEMI Prime n-type Si:As [111] 3″ 380 P/E/P 0.002-0.005 SEMI Prime n-type Si:As [111-2.5°] 3″ 380 P/E 0.002-0.005 SEMI Prime n-type Si:As [111-4°] 3″ 380 P/E 0.002-0.005 SEMI Prime For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material [...]
Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020 Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive [...]
PAM XIAMEN offers 8″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 8″ 725 P/E FZ 2,000-6,000 {2,500-3,700} SEMI notch Prime, TTV<6μm, Bow<15μm, Warp<40μm p-type Si:B [100] 8″ 725 P/E 8-12 SEMI notch Prime, TTV<4µm p-type Si:B [100] 8″ 725 P/E MCZ 0.1-100.0 TEST grade, SEMI notch,TTV<4µm p-type Si:B [100] 8″ 725 P/E MCZ 0.005-0.010 Prime, SEMI notch,TTV<4µm n-type Si:P [100] 8″ 725 P/P 1-2 SEMI notch Prime, Up to 200 wafers available For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in [...]
‘Optically pumped’ laser closer to improving processing speed of sensors Researchers are developing a new material that could improve processing speed of sensors and other electronic components. Credit: University of Arkansas Imagine creating a material for the digital information highway that allows a fast lane of [...]
