6H SiC Wafer
PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating, here we make a brief introduction in two parts:
1.Difference Between 6H and 4H polytype:
1)Commercial resistivity of 6H n type SiC Wafer is (0.02~0.1)ohm.cm, while 4H one is (0.015~0.028)ohm.cm.
2)Stacking sequence of 6H SiC substrate is ABCACB, while 4H one is ABCB
3)Thermal conductivity of 6H semi-insulating SiC wafer is a~460W/mK and c~320W/mk, while 4H one is a~490W/mK and c~390W/mK. For n type SiC, its thermal conductivity, take 4H one as an example, a~420W/mK and c~370W/mK, which is much lower than semi-insulating one, what is why end user choose Semi-insulating SiC as heat sink or other conductivity material.
4)Bank GaP of 6H one is 3.02eV while 4H one is 3.23eV.
5)Hole Mobility of 6H SiC Wafer is 90cm2/V.s while 4H one is~115cm2/V.s
6)Electron mobility of 6H Substrate is ~400cm2/V.s while 4H one is ~800cm2/V.s
2.Specifiaction of 2” 6H SiC Wafer:
|SILICONE CARBIDE WAFER 50.8MM (2”) 6H, N type|
|Surface orientation||(0001), Si side|
|Off-orientation||(0,0 ± 0,5)°|
|Diameter||(50,8 ± 0,38) mm|
|Nominal thickness||(330 ± 25) um|
|Thickness tolerance (TTV)||≤ 10 um|
|Bow||≤ 10 um|
|Warp||≤ 25 um|
|Roughness of front and back sides||Ra < 0,5 nm|
|Primary flat orientation||(11-20) ± 5°|
|Primary flat length||(16 ± 1.65) mm|
|Additional flat length||(8 ± 1.65) mm|
|Package||individual or multi-unit package EPAK type,|
|Additional flat is turned through (90 ± 5)° in reference to the primary flat c.w. (from the front side)|