6H SiC Wafer
PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating, here we make a brief introduction in two parts:
1.Difference Between 6H and 4H polytype:
1)Commercial resistivity of 6H n type SiC Wafer is (0.02~0.1)ohm.cm, while 4H one is (0.015~0.028)ohm.cm.
2)Stacking sequence of 6H SiC substrate is ABCACB, while 4H one is ABCB
3)Thermal conductivity of 6H semi-insulating SiC wafer is a~460W/mK and c~320W/mk, while 4H one is a~490W/mK and c~390W/mK. For n type SiC, its thermal conductivity, take 4H one as an example, a~420W/mK and c~370W/mK, which is much lower than semi-insulating one, what is why end user choose Semi-insulating SiC as heat sink or other conductivity material.
4)Bank GaP of 6H one is 3.02eV while 4H one is 3.23eV.
5)Hole Mobility of 6H SiC Wafer is 90cm2/V.s while 4H one is~115cm2/V.s
6)Electron mobility of 6H Substrate is ~400cm2/V.s while 4H one is ~800cm2/V.s
2.Specifiaction of 2” 6H SiC Wafer:
| SILICONE CARBIDE WAFER 50.8MM (2”) 6H, N type | |
| Surface orientation | (0001), Si side |
| Off-orientation | (0,0 ± 0,5)° |
| Diameter | (50,8 ± 0,38) mm |
| Nominal thickness | (330 ± 25) um |
| Thickness tolerance (TTV) | ≤ 10 um |
| MPD | ≤15/cm3 |
| Bow | ≤ 10 um |
| Warp | ≤ 25 um |
| Roughness of front and back sides | Ra < 0,5 nm |
| Primary flat | Yes |
| Primary flat orientation | (11-20) ± 5° |
| Primary flat length | (16 ± 1.65) mm |
| Additional flat | Yes |
| Additional flat length | (8 ± 1.65) mm |
| Chamfer | Yes |
| Package | individual or multi-unit package EPAK type, vacuum packing |
| Additional flat is turned through (90 ± 5)° in reference to the primary flat c.w. (from the front side) | |
For more information, please contact us email at [email protected] and [email protected].