PAM XIAMEN offers 1″Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
| Item | Dia | Type | Dopant | Orien | Res (Ohm-cm) | Thick (um) | Polish | Description |
| PAM2266 | 25.4mm | P | B | <111> | >1000 | 20000um | DSP | FZ |
| PAM2267 | 25.4mm | P | B | <100> | ANY | 400um | SSP | Thickness is: 400+/-100um. |
| PAM2268 | 25.4mm | ANY | <100> | 500um | SSP | Wafers have particles. Wafers sold “As-Is”. | ||
| PAM2269 | 25.4mm | Undoped | Undoped | <111> | >2000 | 280um | SSP | Intrinsic FZ |
| PAM2270 | 25.4mm | Undoped | Undoped | <100> | >5000 | 73.5um | DSP | FZ, Float Zone |
| PAM2271 | 25.4mm | P | B | <100> | .01-.05 | 500um | DSP | NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. |
| Item | Material | Orient. | Diam (mm) | Thck (μm) | Surf. | Resistivity Ωcm | Comment |
| PAM2271 | p-type Si:B | [100] | 1″ | 280um | P/E | 0-100 ohm-cm | SEMI, 1Flat, Soft cst |
| PAM2272 | Intrinsic Si:- | [111] | 1″ | 280um | P/E | FZ >2000 ohm-cm | Test Grade |
| PAM2273 | p-type Si:B | [100] | 1″ | P/E | ANY | Test Grade | |
| PAM2274 | n-type Si:P | [100] | 1″ | 475 ±10 | E/E | FZ >500 {1,900–2,400} | NO Flats, Soft cst |
| PAM2275 | n-type Si:P | [111] ±0.5° | 1″ | 280 | P/P | FZ 2,000–10,000 | NO Flats, TTV<5μm, Soft cst |
| PAM2276 | Intrinsic Si:- | [100] | 1″ | 500 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
| PAM2277 | Intrinsic Si:- | [100] | 1″ | 160 | P/P | FZ >10,000 | Prime, NO Flats, hard cst, TTV<8μm |
| PAM2278 | Intrinsic Si:- | [100] | 1″ | 160 | P/P | FZ >10,000 | Prime, NO Flats, hard cst, TTV<8μm |
| PAM2279 | Intrinsic Si:- | [111] ±0.5° | 1″ | 500 | P/P | FZ >17,500 | SEMI Prime, 1Flat, hard cst |
| PAM2280 | Intrinsic Si:- | [111] ±0.5° | 1″ | 500 | P/P | FZ >15,000 | SEMI Prime, 1Flat, hard cst |
| PAM2281 | Intrinsic Si:- | [111] ±0.5° | 1″ | 1000 | P/E | FZ 14,000–30,000 | NO Flats, Soft cst, Cassettes of 7, 6, 6 wafers |
| PAM2282 | Intrinsic Si:- | [111] ±2° | 1″ | 27870 | C/C | FZ >10,000 | Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm |
| PAM2283 | p-type Si:B | [510] | 1″ | 1000 | P/E | 1–100 {7.4–7.4} | NO Flats, Soft cst |
| PAM2284 | p-type Si:B | [100] | 1″ | 100 ±15 | P/P | 1–10 | Prime, NO Flats, in sealed bags of 5 wafers. |
| PAM2285 | p-type Si:B | [100] | 24mm | 300 | P/E | 1–100 | Prime, NO Flats, hard cst |
| PAM2286 | p-type Si:B | [100] | 24.3mm | 300 | P/E | 1–10 | Prime, NO Flats, hard cst |
| PAM2287 | p-type Si:B | [100] | 1″ | 300 | P/E | 1–10 {2.8–2.9} | SEMI Prime, 1Flat, Soft cst |
| PAM2288 | p-type Si:B | [100] | 1″ | 300 | P/E | 1–10 | Prime, NO Flats, Soft cst |
| PAM2289 | p-type Si:B | [100] | 24.3mm | 300 | P/E | 1–10 {1.5–1.7} | Prime, NO Flats, hard cst |
| PAM2290 | p-type Si:B | [100] | 1″ | 525 ±10 | P/E | 1–30 | Prime, NO Flats, Soft cst, TTV<5μm, Cassettes of 20 and 8 wafers |
| PAM2291 | p-type Si:B | [100] | 1″ | 1000 | P/E | 1–30 | SEMI Prime, 1Flat, hard cst |
| PAM2292 | p-type Si:B | [100] | 1″ | 3000 | P/E | 1–50 | Prime, NO Flats, Individual cst, Group of 13 wafers |
| PAM2293 | p-type Si:B | [100] | 1″ | 275 | P/P | 0.015–0.020 | SEMI Prime, 1Flat, hard cst |
| PAM2294 | p-type Si:B | [100] | 1″ | 275 | P/E | 0.015–0.020 | SEMI Prime, 1Flat, Soft cst |
| PAM2295 | p-type Si:B | [111] ±0.5° | 1″ | 50 ±10 | P/P | 1–100 | NO Flats, Soft cst |
| PAM2296 | n-type Si:P | [100] | 1″ | 50 ±10 | P/P | >20 | SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean–room sheets, MOQ 4 wafers |
| PAM2297 | n-type Si:P | [100] | 1″ | 280 | P/E | 1–5 | SEMI, 1Flat, hard cst |
| PAM2298 | n-type Si:P | [100] | 1″ | 1500 | P/E | 1–20 | Prime, NO Flats, Soft cst |
| PAM2299 | n-type Si:P | [111] | 1″ | 330 | P/E | FZ >90 | Prime, NO Flats, hard cst |
| PAM2300 | p-type Si:B | [100] | 1″ | 775 | P/E | 8–12 | SEMI Prime, 1Flat, Soft cst |
| PAM2301 | p-type Si:B | [100] | 1″ | 300 | P/P | 4–6 | SEMI Prime, 1Flat, hard cst |
| PAM2302 | p-type Si:B | [100] | 24mm | 300 | P/E | 1–100 | Prime, NO Flats, Soft cst |
| PAM2303 | p-type Si:B | [100] | 1″ | 300 | P/E | 1–10 | Prime, NO Flats, Soft cst |
| PAM2304 | p-type Si:B | [100] | 1″ | 500 | P/E | 1–10 | Ile zostalo ? |
| PAM2305 | p-type Si:B | [100] | 1″ | 380 | P/E | 0.003–0.005 | SEMI Prime, 1Flat, hard cst |
| PAM2306 | p-type Si:B | [100] | 1″ | 275 | P/E | 0.002–0.005 | Prime, NO Flats, hard cst |
| PAM2307 | n-type Si:P | [100] | 1″ | 50 ±10 | P/P | >20 | SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean–room sheets, MOQ 5 wafers |
| PAM2308 | n-type Si:P | [100] | 1″ | 3500 | P/E | 1.2–3.0 | SEMI Prime, 2Flats, Individual cst |
| PAM2309 | n-type Si:P | [100] | 1″ | 300 | P/E | 1–20 | SEMI Prime, 1Flat, hard cst |
| PAM2310 | n-type Si:As | [100] | 1″ | 300 | P/P | 0.001–0.005 | Prime, NO Flats, hard cst |
| PAM2311 | n-type Si:As | [111] | 1″ | 380 | P/E | 0.002–0.007 | SEMI Prime, 1Flat, hard cst |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.