PAM XIAMEN offers 785nm laser diode wafers grown on GaAs substrate. Specific epi structure please see below:
1. Specifications of 785nm GaAs LD Epi Wafer
No.1 AlAs / AlGaAs LD Epi on GaAs PAM200420-LD
| Layer | Material | Thickness | Notes |
| Layer 7 | AlAs | – | |
| Layer 6 | GaAs | – | |
| Layer 5 | AlAs | – | |
| Layer 4 | AlGaAs | 150 nm | Emitting at 785nm |
| Layer 3 | AlAs | – | |
| Layer 2 | AlGaAs | – | Emitting at 700 nm |
| Layer 1 | AlAs | – | |
| Substrate: | GaAs | | |
No. 2 GaAs-based InAlP / AlGaAs Epitaxial Structure PAM200420-LD
| Layer | Material | Thickness | Notes |
| Layer 7 | InAlP | – | |
| Layer 6 | GaAs | – | |
| Layer 5 | InAlP | – | |
| Layer 4 | AlGaAs | – | Emitting at 785nm |
| Layer 3 | InAlP | – | |
| Layer 2 | AlGaAs | – | Emitting at 700 nm |
| Layer 1 | InAlP | 1500 nm | |
| Substrate: | GaAs | | |
No.3 LD Structure on GaAs Susbtrate
785nm LD structures
P+ GaAs P>5E19, d=0.15μm
P- AlGaAs and undoped AlGaAs d~1.5μm
Undoped AlGaInAs QW PL:770+-5nm
Undoped AlGaAs and N- AlGaAs , d~1.5μm
N GaAs buffer
N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 15°off <111>A
2. FAQ 785nm Laser Diode Wafers
Q1：There is typically a shift of a good few nm between the PL (photoluminescence) peak and the typical FP wavelength. Could you advise if that is the case in this GaAs epiwafer too? Do we need to shift the PL peak slightly or have you taken care of that already?
A：The typically shift of laser diode wafer depend on what kind of device and CW or QCW work，out power，normally PL 790－795nm.
Q2: How can we ensure that the device we design based on GaAs LD epitaxial wafer emits at 795, rather than at 790 nm?
A: The actual peak would changes following work condition changes,it depend on what kind of device and CW or QCW work(temperature, power, current, etc.)，for instance, if work temperature is higher，the PL is longer，but normally its PL range should be 790nm-795nm.
Q3: We intend to make ridge devices that we will operate QCW a 10% duty cycle at 20 deg C. In that case what PL lasing shift would you expect?
A: PL is not fixed value. Affected factors by work environment, temperature, etc. it should be a range, 790nm-795nm.
You should confirm a PL wavelength, the stand dev. Is +/-3nm, normally laser device wavelength is longer 10-15nm than PL wavelength.
