785nm laser diode wafers

785nm laser diode wafers

PAM XIAMEN offers 785nm laser diode wafers grown on GaAs substrate. Specific epi structure please see below:

1. Specifications of 785nm GaAs LD Epi Wafer

No.1 AlAs / AlGaAs LD Epi on GaAs PAM200420-LD

Layer Material Thickness Notes
Layer 7 AlAs –  
Layer 6 GaAs –  
Layer 5 AlAs –  
Layer 4 AlGaAs 150 nm Emitting at 785nm
Layer 3 AlAs –  
Layer 2 AlGaAs – Emitting at 700 nm
Layer 1 AlAs –  
Substrate: GaAs    

 

No. 2 GaAs-based InAlP / AlGaAs Epitaxial Structure PAM200420-LD

Layer Material Thickness Notes
Layer 7 InAlP –  
Layer 6 GaAs –  
Layer 5 InAlP –  
Layer 4 AlGaAs – Emitting at 785nm
Layer 3 InAlP –  
Layer 2 AlGaAs – Emitting at 700 nm
Layer 1 InAlP 1500 nm  
Substrate: GaAs    

 

No.3 LD Structure on GaAs Susbtrate

785nm LD structures
P+ GaAs P>5E19, d=0.15μm
P- AlGaAs and undoped AlGaAs d~1.5μm
Undoped AlGaInAs QW PL:770+-5nm
Undoped AlGaAs and N- AlGaAs , d~1.5μm
N GaAs buffer
N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 15°off <111>A

2. FAQ 785nm Laser Diode Wafers

Q1：There is typically a shift of a good few nm between the PL (photoluminescence) peak and the typical FP wavelength. Could you advise if that is the case in this GaAs epiwafer too? Do we need to shift the PL peak slightly or have you taken care of that already?
A：The typically shift of laser diode wafer depend on what kind of device and CW or QCW work，out power，normally PL 790－795nm.
 
Q2: How can we ensure that the device we design based on GaAs LD epitaxial wafer emits at 795, rather than at 790 nm?
A: The actual peak would changes following work condition changes,it depend on what kind of device and CW or QCW work(temperature, power, current, etc.)，for instance, if work temperature is higher，the PL is longer，but normally its PL range should be 790nm-795nm.
 
Q3: We intend to make ridge devices that we will operate QCW a 10% duty cycle at 20 deg C. In that case what PL lasing shift would you expect?
A: PL is not fixed value. Affected factors by work environment, temperature, etc. it should be a range, 790nm-795nm.
You should confirm a PL wavelength, the stand dev. Is +/-3nm, normally laser device wavelength is longer 10-15nm than PL wavelength.
powerwaywafer
For more information, please contact us email at [email protected] and [email protected].

 

2019-03-13

Share this post

Related Posts

What is GaN？

GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic. Basic Parameters for Wurtzite crystal structure at 300K: Breakdown field ~5 x 106 V cm-1 Mobility electrons =< 1000 cm2 V-1 s-1 Mobility holes =< 200 cm2 V-1 s-1 Diffusion coefficient [...]

2012-05-21meta-author
MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]

2019-08-19meta-author
2″ Silicon Wafer-12

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 2″ 280 P/E 0.5-0.6 Prime, NO Flats p-type Si:B [100] 2″ 280 P/E 0.08-0.10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 0.073-0.090 SEMI Prime, p-type Si:B [100] 2″ 250 P/P 0.02-0.04 SEMI Prime p-type Si:B [100] 2″ 225 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 1000 P/P 0.015-0.045 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 0.008-0.095 SEMI Prime p-type Si:B [100-4°] 2″ 300 P/P 0.003-0.004 SEMI Prime, p-type Si:B [100-6° towards[110]] 2″ 300 P/E 0.0026-0.0029 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.0023-0.0029 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.001-0.006 SEMI Prime, p-type Si:B [100-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 280 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 Prime, NO Flats p-type Si:B [100] 2″ 500 P/P 0.001-0.005 SEMI Prime, p-type Si:B [111-10° towards[112]] 2″ 300 P/E 20-25 SEMI Prime p-type Si:B [111] 2″ 380 P/P 10-20 SEMI Prime p-type Si:B [111-2° towards[112]] 2″ 1000 P/P 10-30 SEMI Prime p-type Si:B [111] 2″ 500 P/P 2.4-2.6 SEMI Prime p-type [...]

2019-03-07meta-author
Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN

Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN   Properties of metalorganic vapor phase epitaxy (MOVPE) grown GaN bulk layers with varying GaN buffer growth conditions are characterized by low-temperature (6K) photoluminescence (LT-PL) and X-ray diffraction (XRD). [...]

2013-05-09meta-author
GaAs (100) crystal-4

PAM XIAMEN offers GaAs(100) Cr-doped crystal. GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2″ dia x 0.35mm, 2sp GaAs single crystal wafer Growing Method:               VGF Orientation:                       [...]

2019-04-22meta-author
Soda Lime Glass Window Applications

PAM XIAMEN offers Soda Lime Glass Window. Please send us email at [email protected] if you need other specs and quantity. Applications where too much heat build up is a problem Hot mirrors to reflect Infrared and Transmitting Visible Light Cold mirrors for trasmitting Infrared (IR) and [...]

2019-02-27meta-author