785nm laser diode wafers

PAM XIAMEN offers 785nm laser diode wafers.

785nm LD structures
P+ GaAs P>5E19, d=0.15μm
P- AlGaAs and undoped AlGaAs d~1.5μm
Undoped AlGaInAs QW PL:770+-5nm
Undoped AlGaAs and N- AlGaAs , d~1.5μm
N GaAs buffer
N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 15°off <111>A

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

2019-03-13

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