Growth Method: CZ
Diameter: 200.0±0.5mm
Type/Dopant: P/Boron
Orientation: (111) ±0.5°
Resistivity: <1Ωcm
Notch: SEMI Standard
Thickness: 1,000 ±25um
TTV <6um
Bow <60um
Warp <60um
Frontside Surface: Polished
Backside Surface: Etched
Particle ≦[email protected]≧0.3um
For more information, send us email at [email protected] and [email protected]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide Published by: Jun-Feng Wang ; Qiang Li ; Fei-Fei Yan ; He [...]
PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec.Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm CommentPAM2885 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM [...]
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]
(20-21) Plane Si-GaN Freestanding GaN Substrate PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN SubstrateItem PAM-FS-GAN(20-21)-SIDimension 5 x 10 mm2Thickness 380+/-50umOrientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°Conduction Type Semi-InsulatingResistivity (300K) > 106 Ω.cmTTV ≤ 10 µmBOW BOW ≤ 10 µmSurface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.Dislocation Density ≤5 x 106 cm-2Macro Defect Density 0 cm-2Useable Area > 90% (edge exclusion)Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as [...]
