PAM XIAMEN offers 80+1mm FZ Si Ingot-3
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×300±25µm, p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm, TTV<10µm, Bow<40µm, Warp<40µm, Both-sides-polished, SEMI Flats (two), Sealed in Empak cassette. Primary Flat: 32.5±-2.5, 110±1°。 Secondary Flat: 18±2，90°±5° For more information, please visit our website: https://www.powerwaywafer.com, send [...]
The SiC and GaN power semiconductor market will exceed $10 billion by 2027! Key conclusions: Emerging-market silicon carbide(SiC) and gallium nitride(GaN) power semiconductors are expected to reach nearly $1 billion by 2020, driven by demand for hybrid and electric vehicles, power and photovoltaic (PV) inverters. The use [...]
PAM XIAMEN offers 2004nm laser diode wafers. Available Center Wavelengths: 1970 nm – 2051 nm Wavelength Tolerance: +/- 1nm CW Output Power (typical): 3mW (out of fiber) SMSR (typical): >40 dB Optical Linewidth: < 1.5 MHz Temperature Tuning Coefficient (typical): 0.1 nm/°C Current Tuning Coefficient (typical): 12 pm/mA Slope Efficiency (typical): 0.12 [...]
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
InGaAsN epitaxially on GaAs or InP wafers PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows: Layer Doping Thickness (um) Remark GaAs undoped ~500 <001> wafer substrate InGaAsN* undoped 0.150 band gap <1 eV Al(0.3)Ga(0.7)As undoped 0.5 GaAs undoped 2 Al(0.3)Ga(0.7)As undoped 0.5 ITEM x/y Doping carrier conc.(cm3) Thickness（um） wave length(um) Lattice mismatch InAs(y)P 0.25 none 5.0*10^16 1.0 – In(x)GaAs 0.63 none 1.0*10^17 3.0 1.9 600<>600 InAs(y)P 0.25 S 1.0*10^18 205.0 – InAs(y)P 0.05->0.25 S 1.0*10^18 4.0 – InP – S 1.0*10^18 0.3 – Substrate:InP S (1-3)*10^18 ~350 – Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] [...]
PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrates (001) BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade with single domain BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade(with domains) BaTiO3 (001) 5x5x1.0 mm, 2SP, Substrate grade(with domains) BaTiO3 (001) 10x10x0.5 mm, 1SP, Substrate grade (with domains) BaTiO3 [...]
