PAM XIAMEN offers 80+1mm FZ Si Ingot-3
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates. PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
CZT Pixilated Detector In contrast to indirect semiconductor detectors, CZT provides ‘direct’ solid-state technology. The CZT semiconductor is a pixilated array with an effective Z of 50 and a density of 5.8 g/cm3. Gamma rays enter the CZT semiconductor detector and are directly converted to [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime n-type Si:P [111] 2″ 500 P/P FZ 130-150 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ 125-210 SEMI Prime n-type Si:P [111] 2″ 380 P/E FZ 100-300 SEMI Prime n-type Si:P [111] 2″ 450 P/P FZ 100-230 Prime, NO Flats n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 80-100 SEMI Prime, in hard cst {as ingot to process} n-type Si:P [111] 2″ 300 P/P FZ 70-95 SEMI Prime n-type Si:P [111-1°] 2″ 300 P/E FZ 69-77 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime n-type Si:P [111] 2″ 300 P/E FZ 60-90 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 55-75 SEMI Prime, in hard cst {as ingot [...]
CZT High Resolution Pixel Detector PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution. Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 10.0×10.0mm2 Thickness 2.0mm 5.0mm Pixel size 1.1×1.1mm2 Pixel array 8×8 Electrode material Au Operation temperature -20℃-+40℃ Energy range 20KeV~700MeV 20KeV~700MeV Energy resolution(22℃) <6%@59.5KeV <4.5%@122KeV <3%@662KeV Defective pixel(DP) 10℃~40℃ Storage temperture 20%-80% Remarks Customized available Spectrum Features Long-time stability [...]
PAM XIAMEN offers 650nm laser diode wafers. 650nm LD structures P+ GaAs P>5E19, d=0.15μm P- AlGaInP and undoped AlGaInP d~1.5μm Undoped GaInP QW PL:640+-5nm Undoped AlGaInP and N- AlGaInP , d~2.2μm N GaAs substrate N=(0.4~4)×10^18 d=350~625μm (100) 10°off <111>A For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy [...]
Distribution of defects and impurities in gallium arsenide wafers after surface gettering Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows [...]
