PAM XIAMEN offers 80+1mm FZ Si Ingot-3
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 6″CZ Prime Silicon Wafer Item7, 50pcs Silicon wafer: i. Diameter: 150 mm ± .5 mm, ii. Thickness: 675μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ [...]
PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates. General Properties for Tungsten Symbol W Atomic Number 74 Atomic Weight: 183.84 Crystal structure: BCC Lattice constant at room temperature: 0.316 nm Density: 19.25 g/cm3 Melting Point: 3422 °C Boiling Point: 5555 °C Tungsten (W) Polycrystalline Substrate: [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Boron P+ 100 57,5 ± 2,5 100 ± 1 0.0 ± 5.0 ° 0.001 – 100 Ohmcm 150 ± 0.5 mm 675 ± 200 µm 100 20 100 6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° > [...]
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 500±25um. 6″ Si wafer DSP N-type <111> thickness 500±25um resistivity40-100Ωcm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
Several types of GaN MOSFETs with normally-off operation have been fabricated on insulating substrate and evaluated. In recessed-gate GaN MOSFET, the threshold voltage (Vth) can be easily controlled, but the current drivability is modest and needs to be improved by adopting appropriate device structure [...]
