PAM XIAMEN offers 80+1mm FZ Si Ingot-3
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM CZ DIAMETER 4 inch (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 525µm +/-25µm SSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 8 – [...]
PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um，warp ≤30um One [...]
Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]
PAM-02A2 series detectors are super small sized detectors based on planar CZT. They can detect α-ray, γ-ray and β-ray simultaneously. PAM-02A2 integrates CZT crystal, low noise charge preamplifier circuit, SK shaping circuit and high-voltage circuit. With ordered cable, it can output Quasi-gaussian signal or [...]
PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows: 1. N Type GaN Substrate Datasheet 1.1 4″(100mm) Undoped Free-standing GaN Substrate Item PAM-FS-GaN100-U Conduction Type Undoped Size 4″(100)+/-1mm Thickness 350-450um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length – Secondary Flat Location (11-20)+/-3° Secondary Flat Length – Resistivity(300K) <0.5Ω·cm Dislocation Density <5×10^6cm-2 FWHM – TTV <=35um BOW <=50um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded Usable Area ≥ 90 [...]
PAM-XIAMEN can offer 850nm and 940nm infrared LED wafer by MOCVD. 850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it [...]
