PAM XIAMEN offers 80+1mm FZ Si Ingot-3
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Plasma Etching Silicon Wafers. We have a large selection of silicon wafers for plasma etching. Many of our clients prefer our low cost mechanical grade silicon wafers for plasma etching. The popular with researchers is 100mm mechanical grade wafers. On client uses these mech grade wafers for [...]
PAM XIAMEN offers 6″ FZ Silicon Wafer-7 GQ56b Silicon wafers, per SEMI Prime, P/P 6″Ø×675±10µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 10,000 Ohmcm, Both-sides-polished, One SEMI Flat Sealed in Empak or equivalent cassette, MCC Lifetime>1000µs For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
GaN epitaxy template on Sapphire substrate with N-type, P-type or semi-insulating is available for the preparation of semiconductor optoelectronic devices and electronic devices. GaN epitaxial layer on sapphire substrate refers to a composite structure composed of a gallium nitride single crystal thin film material [...]
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates. PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and [...]
In contrast to indirect semiconductor detectors, CZT provides ‘direct’ solid-state technology. The CZT semiconductor is a pixilated array with an effective Z of 50 and a density of 5.8 g/cm3. Gamma rays enter the CZT semiconductor detector and are directly converted to electron hole [...]
