PAM XIAMEN offers 80+1mm FZ Si Ingot-3
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Sodium-bismuth tungstate (NaBi(WO4)2. Sodium-bismuth tungstate (NaBi(WO4)2 or NBWO) is a scintillator material possessing very high optical quality, high density and radiation hardness. Due to these properties NBWO crystals are widely used in quantum electronics, acousto-optics and high-energy physics, in particular, in [...]
PAM-XIAMEN offers 4 inch Blue LED Wafer Anticipating exploding demand for blue LED chips, Xiamen Powerway Advanced Material Co.,Ltd. (PAM-XIAMEN) shift a GaN LED production line from the current 2-inch-wafer-based operation to 4-inch-wafer facilities within a couple of years. “We have established the production process based [...]
PAM XIAMEN offers 4″ silicon ignot. Silicon ingot, per SEMI, G 100.7±0.3mmØ, p-type Si:B[100]±2.0°, Ro=(0.001-0.003)Ohmcm, Ground Ingot, NO Flats, NOTE: visual rings of dopant on front and back side ARE NOT allowed For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [5,5,12] ±0.5° 3″ 380 P/E 1-10 SEMI Prime p-type Si:B [211] ±0.5° 3″ 525 P/P >10 SEMI Prime p-type Si:B [211] ±0.5° 3″ 525 P/E >10 SEMI Prime p-type Si:B [111-28° towards[001]] ±0.5° 3″ 400 P/E >20 SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst p-type Si:B [111-4°] ±0.5° 3″ 380 P/E 8-12 SEMI Prime p-type Si:B [111-4°] ±0.5° 3″ 380 P/E 8-12 SEMI Prime p-type Si:B [111] ±0.5° 3″ 508 E/E 0.792-1.008 SEMI TES, TTV<2μm, Epak cst p-type Si:B [111-4°] [...]
The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an [...]
PAM XIAMEN offers 1654nm laser diode wafers. Available Center Wavelengths: 1640nm – 1670nm Wavelength Tolerance: +/- 1nm CW Output Power (typical): 8mW (out of fiber) SMSR (typical): >40 dB Optical Linewidth: < 1.5 MHz Temperature Tuning Coefficient (typical): 0.1 nm/°C Current Tuning Coefficient (typical): 10 pm/mA Slope Efficiency (typical): 0.10 mW/mA For more [...]
