PAM XIAMEN offers 80+1mm FZ Si Ingot-5
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN can offer FZ neutron transmutation doping (NTD) silicon wafer with a uniform doping concentration and uniform radial resistivity distribution. At present, silicon material is still the most important basic material in the electronic information industry. More than 95% of semiconductor devices and more [...]
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
PAM XIAMEN offers AlGaN Template on Sapphire or Silicon Substrate. AlGaN (Aluminum Gallium Nitride) is a direct bandgap ternary semiconductor alloy material, and its band gap at room temperature can vary continuously from 3.4eV to 6.2eV depending on the composition of Al. The large [...]
PAM XIAMEN offers LaAlO3 Single Crystal Substrat Lanthanum aluminate (LaAlO3) single crystal substrate is the large-scale high-temperature superconducting film,which has good match with YBaCuO and other high temperature superconductor materials and lattice, low dielectric constant and small microwave loss, so LaAlO3 substrate is suitable for [...]
PAM XIAMEN offers Ceramic ALN SUBSTRATE. 100X100 Thickness 1.0±0.03mm Item Unit Value Test Standard 1）Colour —- Gray 3.2 2）Density g/cm³ ≥3.33 GB/T 2413 3）Thermal Conductivity 20℃，W/(m·K) ≥170 GB/T 5598 4）Dielectric Constant 1MHz 8~10 GB/T 5594.4 5）Dielectric Strength KV/mm ≥17 GB/T 5593 6）Flexural Strength MPa ≥450 GB/T 5593 7）Camber Length‰ ≤2‰ 8）Surface roughness Ra μm 0.3~0.6 GB/T 6062 9）Water absorption % 0 GB/T 3299-1996 10)Volume resistivity 20℃，Ω.cm ≥1013 GB/T 5594.5 11）Thermal expansivity 10-6/℃ 20~300℃ 2~3 GB/T5593 300~800℃ 2.5~3.5 For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen [...]
High purity SiC (silicon carbide) substrate, which is for microwave device and graphene epitaxial growth, can be provided by PAM-XIAMEN – a SiC substrate supplier. Among all the usages, epitaxial graphene growth on high-purity semi-insulating silicon carbide substrate is expected to produce high-performance graphene integrated circuits, [...]
