PAM XIAMEN offers 80+1mm FZ Si Ingot-5
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers. SiC usually adopts the PVT method with [...]
PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm Silicon ingot, per SEMI, G Ø76mm FZ n-type Si:P[100]±2.0° Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ Silicon Oxide Wafer 4″ Silicon Oxide Wafer Diameter (mm): 100mm Grade: Prime Growth: CZ Type/Dopant: any Orientation: 100 Resistivity (Ohm-cm): any Thickness (µm): 500±25μm Tolerance (µm): any Surface Finish: SSP Flats: SEMI-Std. TTV < (µm): any Bow < (µm): any Warp < (µm): any [...]
Highlights •Effects of atomic step width on the removal of sapphire and SiC wafers are studied. •The reason of effects of step width on the removal and the model are discussed. •CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed. •The variations of atomic [...]
Undoped InP Wafer PAM-XIAMEN offer undoped intrinsic InP wafer substrate, see the following: InP wafer,2” (PAM-190507-INP) Diameter – 50.8±0.5 mm; Thickness – 350±25 µm; N type, undoped Dopant – undoped Orientation – (100)±0.5° Flat orientation – SEMI-E/J; Major flat orientation – (0-1-1) ±0.5° Major flat length [...]
Some news indicates that a high-tech company in a certain country has developed a new type of substrate material that matches the GaN lattice and can grow GaN well. (Note: It is very difficult to prepare GaN bulk single crystals, so the GaN mentioned [...]
