PAM XIAMEN offers 80+1mm FZ Si Ingot-5
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN produce now include a-plane and m-plane single crystal GaN substrate as well as SiC crystal of various polytypes.
850nm and 940nm infrared LED wafer We can offer 850nm and 940nm infrared LED epiwafer by MOCVD.850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the [...]
PAM XIAMEN offers PbTe Single Crystal, Lead Telluride Crystal.(Not sell it temporarily) Technical specifications: Melting point: 924°C (1,695 °F; 1,197 K) Lattice constant: a = 6.46 Angstroms Solubility in water: insoluble Band gap: 0.25 eV (0 K) 0.32 eV (300 K) Electron Mobility: 1600 cm2 V−1 s−1 (0 K) 6000 cm2 V−1 s−1 (300 K) Crystal structure: Halite (cubic) Available sizes: 10 x 10 x1 mm, 5x5x1 mm, 20 x 10x 1mm. Customization [...]
Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching Highlights •Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme. •InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template. •Overgrown [...]
Undoped Gallium Arsenide(GaAs) Wafer PAM-XIAMEN offer undoped GaAs wafer as follows: No1.Undoped GaAs wafers,2”size Diameter:50.8 mm +/- 0.3 mm Orientation: (100)+/-0.1deg. Semi Insulating, Undoped US Semi Standard Flats Major Flat Length: 17+/-1mm Minor Flat Length: 7+/-1mm Thickness: 350+/-25um Resistivity: >1E7 Ohm*cm Mobility: >=4000 cm2/V*s CC: Not Specified EPD: <=5000 cm-2 1 Side Polished (Ra < 5Å), EPI [...]
PAM XIAMEN offers GaAs(100) Si- doped crystal . GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 2sp,cc: (1.07-3.89) x 10^18 /cm^3 GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 1sp,cc: (1.65-3.59) x 10^18 /cm^3 [...]
