PAM-XIAMEN can offer FZ neutron transmutation doping (NTD) silicon wafer with a uniform doping concentration and uniform radial resistivity distribution. At present, silicon material is still the most important basic material in the electronic information industry. More than 95% of semiconductor devices and more [...]
2021-06-24meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
PAM XIAMEN offers AlGaN Template on Sapphire or Silicon Substrate. AlGaN (Aluminum Gallium Nitride) is a direct bandgap ternary semiconductor alloy material, and its band gap at room temperature can vary continuously from 3.4eV to 6.2eV depending on the composition of Al. The large [...]
2019-04-26meta-author
PAM XIAMEN offers LaAlO3 Single Crystal Substrat
Lanthanum aluminate (LaAlO3) single crystal substrate is the large-scale high-temperature superconducting film,which has good match with YBaCuO and other high temperature superconductor materials and lattice, low dielectric constant and small microwave loss, so LaAlO3 substrate is suitable for [...]
2019-05-07meta-author
PAM XIAMEN offers Ceramic ALN SUBSTRATE.
100X100 Thickness 1.0±0.03mm
Item
Unit
Value
Test Standard
1)Colour
—-
Gray
3.2
2)Density
g/cm³
≥3.33
GB/T 2413
3)Thermal Conductivity
20℃,W/(m·K)
≥170
GB/T 5598
4)Dielectric Constant
1MHz
8~10
GB/T 5594.4
5)Dielectric Strength
KV/mm
≥17
GB/T 5593
6)Flexural Strength
MPa
≥450
GB/T 5593
7)Camber
Length‰
≤2‰
8)Surface roughness Ra
μm
0.3~0.6
GB/T 6062
9)Water absorption
%
0
GB/T 3299-1996
10)Volume resistivity
20℃,Ω.cm
≥1013
GB/T 5594.5
11)Thermal expansivity
10-6/℃
20~300℃
2~3
GB/T5593
300~800℃
2.5~3.5
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen [...]
2019-07-03meta-author
High purity SiC (silicon carbide) substrate, which is for microwave device and graphene epitaxial growth, can be provided by PAM-XIAMEN – a SiC substrate supplier. Among all the usages, epitaxial graphene growth on high-purity semi-insulating silicon carbide substrate is expected to produce high-performance graphene integrated circuits, [...]
2020-08-25meta-author