808nm VCSEL Array Chip with 977 Emitters
PAM-XIAMEN can supply 808nm VCSEL array chip with 977 emitters. The VCSEL array can operate at a typical voltage of 2.15V with a power conversion efficiency of 42%. More electrical parameters please see below:
1. 808nm VCSEL Array Product Description & Features
Item No. PAM808V977K
· 808nm VCSEL Array
· 4.15W @ 5A
2. Mechanical Characteristics of 808nm VCSEL Array Chip
| Number of emitters | 977 |
| Chip width | 1499±20um |
| Chip length | 1503±20um |
| Chip height | 100±10um |
| Aperture | 11±2um |
| Bonding pad | 130um*1479um*2(Dual electrode） |
3. Electro-Optical Characteristics of 808nm VCSEL Chip with 977 Emitters
| Parameters | Symbol | Min | Typical | Max | Units | Test Condition |
| Threshold current | Ith | – | 1.35 | 1.5 | A | @5A, 25℃, 0.5ms, 1% |
| Operating voltage | Vf | 2 | 2.15 | 2.35 | V | |
| Wavelength | λpeak | 800 | 808 | 818 | nm | |
| Output optical power | P | 4050 | 4150 | 4400 | mW | |
| Slope efficiency | ηs | – | 1.2 | – | W/A | |
| Power conversion efficiency | PCE | 38 | 42 | – | % | |
| Beam full divergence (D86) | φ | 25 | ||||
| Wavelength Temp. coefficient | dλ/dT | 0.07 | nm/℃ |
4. Typical Performance Curves of 808nm VCSEL Chip with 977 Emitters
Test conditions: wafer test, 0.5ms, 1%
5. Absolute Maximum Ratings 808nm VCSEL Array Chip with 977 Emitters
| Parameters | Conditions |
| Forward DC current | ≤10A |
| Storage temperature | -40 to 85℃ |
| Packaging temperature | ≤260℃(<10S) |
| Junction temperature | ≤120℃ |
6. About 808nm VCSEL
High power VCSEL can achieve higher output power, which is expected to replace traditional high-power EEL in multiple fields. Due to the special structure of VCSEL, it has natural advantages in fiber coupling. Therefore, 808nm VCSEL can become a new pump light source for erbium-doped fiber amplifiers and Nd: YAG, Nd: YVO4 solid-state lasers. At the same time, the maximum laser wavelength of VCSEL is only a few nanometers, which increases the color quantity by 30% -40% compared to the color standard of light-emitting diodes (LEDs), improves the efficiency of light modulation, and its low cost, high efficiency, and long lifespan make VCSEL a new type of pump light source after intracavity or intracavity frequency doubling. Generating three primary colors of laser can serve as a light source for laser displays.
Near infrared illumination (808-1064nm) is used for monitoring and inspection of camera systems, which can capture images of objects under high-speed and difficult conditions. Due to the efficient and simple beam shaping of VCSEL, it avoids the complex optical system required for LED wide emission modes, making the VCSEL array a good radiation source. In addition, the brightness of the VCSEL array is 10-100 times higher than the brightest LED, allowing for focused illumination at distances of several hundred meters. The most important advantage in this application may be the very uniform illumination of specific areas, and the aspect ratio can be adjusted according to the needs of the camera. Although different wavelengths can be used for infrared lighting, there are usually trade-offs in terms of responsiveness, eye safety, cost, and efficiency. For example, the 808nm VCSEL light source provides the best response rate for CCD cameras, but for high-power light sources, it is not safe for the eyes and cannot be used for covert applications.
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