850nm and 940nm infrared LED wafer
We can offer 850nm and 940nm infrared LED epiwafer by MOCVD.850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it can also see the weak red light.
Please see below structure: please note for 850nm-870nm, there are no indium in the emission area: PAM190704-LED
850-870 LED
| Material | Type | Thickness(nm) | note |
| AlGaAs | P+ | 100 | ohmiccontact layer |
| AlGaAs | P | 6000 | P-Cladding |
| AlGaAs/GaAs | undoped | 300 | Active layer |
| AlGaAs | N | 1000 | N-Cladding |
| N-GaAs substrate | |||
850nm and 940nm infrared LED wafer
940 LED
| Material | Type | Thickness(nm) | note |
| AlGaAs | P+ | 100 | ohmiccontact layer |
| AlGaAs | P | 6000 | P-Cladding |
| AlGaAs/InGaAs | lundoped | 300 | Activelayer |
| AlGaAs | IN | 1000 | N-Cladding |
| N-GaAs substrate | |||
AlGaAs/GaAs epi-wafers MOCVD
| Parameter | Value |
| Wave length | 850-920 nm |
| р-layer | <= 2um |
| Doping of р | >= 1х1018 |
| Active layer | >= 0.2 um |
| n-layer | <= 10 um |
| Doping of n | >= 1х1017 |
| Substrate | GaAs, thickness <= 400um |
| Optical power | >= 5 mW |
| (@ 20mA) |
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com