850nm and 940nm infrared LED wafer

850nm and 940nm infrared LED wafer

We can offer 850nm and 940nm infrared LED epiwafer by MOCVD.850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it can also see the weak red light.

Please see below structure: please note for 850nm-870nm, there are no indium in the emission area: PAM190704-LED

850-870 LED

Material Type Thickness(nm) note
AlGaAs P+ 100 ohmiccontact layer
AlGaAs P 6000 P-Cladding
AlGaAs/GaAs undoped 300 Active layer
AlGaAs N 1000 N-Cladding
N-GaAs substrate

 

850nm and 940nm infrared LED wafer

850nm and 940nm infrared LED wafer      

 

 

 

 

 

 

 

 

 

 

940 LED

Material Type Thickness(nm) note
AlGaAs P+ 100 ohmiccontact layer
AlGaAs P 6000 P-Cladding
AlGaAs/InGaAs lundoped 300 Activelayer
AlGaAs IN 1000 N-Cladding
N-GaAs substrate

 

AlGaAs/GaAs epi-wafers MOCVD

 

Parameter Value
Wave length 850-920 nm
р-layer <= 2um
Doping of р >= 1х1018
Active layer >= 0.2 um
n-layer <= 10 um
Doping of n >= 1х1017
Substrate  GaAs, thickness <= 400um
Optical power >= 5 mW
(@ 20mA)

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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