This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]
2018-11-12meta-author
PAM XIAMEN offers Ceramic ALN SUBSTRATE.
100X100 Thickness 0.5±0.03mm
Item
Unit
Value
Test Standard
1）Colour
—-
Gray
3.2
2）Density
g/cm³
≥3.33
GB/T 2413
3）Thermal Conductivity
20℃，W/(m·K)
≥170
GB/T 5598
4）Dielectric Constant
1MHz
8~10
GB/T 5594.4
5）Dielectric Strength
KV/mm
≥17
GB/T 5593
6）Flexural Strength
MPa
≥450
GB/T 5593
7）Camber
Length‰
≤2‰
8）Surface roughness Ra
μm
0.3~0.6
GB/T 6062
9）Water absorption
%
0
GB/T 3299-1996
10)Volume resistivity
20℃，Ω.cm
≥1013
GB/T 5594.5
11）Thermal expansivity
10-6/℃
20~300℃
2~3
GB/T5593
300~800℃
2.5~3.5
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen [...]
2019-07-03meta-author
This study simulates thermal conductivity via a carrier scattering mechanism and the related parameters are obtained based on first principles for intrinsic and doped silicon carbide (SiC) over a temperature range of 300–1450 K. The theoretical analysis results show that the thermal conductivity decreases with [...]
2020-02-11meta-author
Main-amplifier
PAM-02A is an amplifier which used for shaping and amplifying signals comes from scintillation detector, proportional counter and semiconductor detector.
PAM-02A integrates amplifier circuit and SK shaping circuit. With ordered cable, it can direct pulse signal which comes from amplifier into multi-channel pulse analyzer.
Specification
Power [...]
2019-04-25meta-author
PAM XIAMEN offers 3″ Silicon Wafer-16 as follows, while silicon wafer list includes, but not limited to the following.
3″ Si wafer, R≤100Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: P/type boron
3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> direction
5. Resistivity: ≤100Ωcm
6. Primary surface: [...]
2019-11-20meta-author
We offer LT-GaAs wafer for THz or detector and other application.
1. 2″ LT-GaAs Wafer Specification:
Item
Specifications
Diamater(mm)
Ф 50.8mm ± 1mm
Thickness
1-2um or 2-3um
Marco Defect Density
≤ 5 cm-2
Resistivity(300K)
>108 Ohm-cm
Carrier
＜0.5ps
Dislocation Density
<1×106cm-2
Useable Surface Area
≥80%
Polishing
Single side polished
Substrate
GaAs substrate
Remark: Other conditions:
1) GaAs substrate should be undoped/semi-insulating with (100)orientation.
2) Growth temperature: ~ 200-250 C
2. LT-GaAs [...]
