850nm laser diode wafers

PAM XIAMEN offers 850nm laser diode wafers.

850nm SLD structures
P+ GaAs P>5E19,d=0.15um
P- AlGaAs and undoped AlGaAs d~1.4um
Undoped GaAsP or AlGaInAs active layer,PL:850+-15nm
Undoped AlGaAs and N- AlGaAs,d~1.5um
N GaAs buffer
N GaAs substrate N=(0.4~4)×10^18d=350~625um(100)2° off

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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