8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
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We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Role of Si in the Surface Damage Mechanism of RB-SiC/Si Under Mechanical Loading Published by: Quanli Zhang ; Zhen Zhang ; Honghua [...]
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates. PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
PAM XIAMEN offers AlGaN Template on Sapphire or Silicon Substrate. AlGaN (Aluminum Gallium Nitride) is a direct bandgap ternary semiconductor alloy material, and its band gap at room temperature can vary continuously from 3.4eV to 6.2eV depending on the composition of Al. The large [...]
PAM XIAMEN offers 6″ Prime EPI Wafer. 6″ EPI Wafer diameter: 6″ (150 +-0,5 mm) orientation: <100> primary flat length: 57.5mm+/-2.5mm primary flat: <110> +/- 1 no secondary flat overall thickness 280-325μm TTV <10um WARP/BOW <50um TIR <3um EPI layer: -type: n -dopant: P [...]
Abstract The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for [...]
Ternary semiconductor thin films of InAsP epitaxially on InP can be offered to customers for developing a better and a more reliable distributed feedback (DFB) lasers. Our InAsP layer has excellent properties, the size of the InAsP layer can be controlled by the height [...]
