8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
For more information, send us email at [email protected] and [email protected]
PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers. 1. Specification of 440-460nm Blue GaN LD wafer (PAM-190909-GAN-LD) Item Descriptions Materials Substrate blue laser 440-460nm InGaN 2 inch Sapphire substrate*** GaN Blue LD EPI Wafer Spec Spec LD Epitaxial Wafer Size Growth MOCVD Diameter 50.8 ± 0.2 [...]
As one of the leading GaN on silicon companies, PAM-XIAMEN offers GaN on Silicon wafer Substrate. Single crystal silicon wafer substrate is undoubtedly the most potential substrate material for growing III Nitride template due to the advantages of high quality, low price, easy cleavage and etc. The [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] ±0.5° 4″ 630 P/G FZ >7,000 SEMI Prime, Lifetime>1,000μs, Back-side Fine Ground n-type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, Lifetime>1,600μs,settes of 6 and 8 wafers n-type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, Lifetime>1,600μs n-type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI TEST (Scratches, Lifetime>1,600μs n-type Si:P [111] ±0.25° 4″ 675 P/E FZ 7,000-10,000 SEMI Prime, Lifetime>1,000μs, Light scratches n-type Si:P [111] ±0.5° 4″ 525 P/E FZ >5,000 SEMI Prime, Lifetime>1,000μs n-type Si:P [111-1° towards[110]] ±0.5° 4″ 525 P/E FZ >5,000 SEMI TEST (scratches on back-side) n-type Si:P [111] ±0.25° 4″ 675 P/E FZ 5,000-7,000 SEMI Prime, [...]
PAM XIAMEN offers MgF2 crystal. MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications Xtl Structure Lattice (A) Melting Point Density g/cm3 Hardness Thermal Expansion Refractive index Tetragonal a = 4.64 1255 oC 3.18 6 (mohs) 13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c ho 1.37740 c = 3.06 he 1.38945 MgF2 [...]
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-2 2″ Silicon Wafer Resistivity 1-5Ωcm P type, Boron doped Orientation (100) Thickness 300±25μm SSP SEMI Prime, 1Flat, Hard cst For more information, send us email at [email protected] and [email protected]
The long-wavelength InGaAsN quantum well laser based on GaAs substrate is one of the most promising development directions. InGaAsN laser structures are usually grown by molecular beam epitaxy (MBE) or metal organic vapor deposition (MOCVD). InGaNAs material is a promising material for long wavelength [...]
