8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
In the present work, dislocation arrays are investigated in float zone (FZ) grown silicon wafers by the light beam induced current (LBIC) mapping technique at different wavelengths and by deep level transient spectroscopy (DLTS). The LBIC technique appears to be able to recognize and [...]
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on [...]
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide. 2 inches in diameter The silicon substrate orientation<100> resistivity>10Ωcm The insulating thermal oxidation film thickness 300nm Polishing: one-sided for microelectronics [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: [...]
PAM XIAMEN offers 1″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] ±0.5° 1″ 50 ±10 P/P 1-100 n-type Si:P [100] 1″ 50 ±10 P/P >20 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 4 wafers n-type Si:P [100] 1″ 280 P/P 1-20 SEMI Prime n-type Si:P [100] 1″ 280 P/E 1-5 SEMI n-type Si:P [100] 1″ 1500 P/E 1-20 Prime, n-type Si:P [100] 1″ 525 P/E 0.05-0.15 SEMI n-type Si:P [111] 1″ 330 P/E FZ >90 Prime p-type Si:B [100] 1″ 775 P/E 8-12 SEMI Prime p-type Si:B [100] 24mm 300 P/E 1-100 Prime, p-type Si:B [100] 1″ 300 P/E 1-10 Prime, p-type Si:B [100] 1″ 500 P/E 1-10 p-type Si:B [100] 1″ 380 P/E 0.003-0.005 SEMI Prime p-type Si:B [100] 1″ 275 P/E 0.002-0.005 Prime n-type Si:P [100] 1″ 50 ±10 P/P >20 SEMI Prime, TTV<5μm, in single wafer trays [...]
PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide 6″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 [...]
