8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 6″CZ Prime Silicon Wafer-1 Item8, 25pcs Silicon wafer: i. Diameter: 150 mm ± 0.5 mm, ii. Thickness: 675μm ±25μm iii. Doping: P type iv. Orientation: (111) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ [...]
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed [...]
PAM XIAMEN offers Zero Diffraction Plate. SiO2 Single Crystal Zero Diffraction Plate for XRD Desktop X-Ray Orientation Machine for Single Crystal Orientation Measurement Zero Diffraction Plate for XRD sample: 30 x 30 x 2.5 mm with Cavity 10 ID x 1.0 mm, 2sp, SiO2 [...]
Effects of mosaic structure on the physical properties of CdZnTe crystals Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [211] ±0.1° 4″ 275 P/P FZ >3,000 SEMI Prime, TTV<2μm Intrinsic Si:- [111] ±0.5° 4″ 500 P/P FZ >25,000 SEMI Prime p-type Si:B [110] ±0.5° 4″ 525 P/E 4-6 SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF p-type Si:B [110] 4″ 525 P/E 2-10 PF<111> SF 109.5° p-type Si:B [100] 4″ 300 P/E 800-5,400 SEMI Prime p-type Si:B [100] 4″ 500 P/P 10-20 SEMI Prime p-type Si:B [100] 4″ 3000 P/E/P 10-15 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 250 P/E 8-12 SEMI Prime p-type Si:B [100] 4″ 275 P/P 7-14 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 300 P/E 7-14 SEMI Prime, TTV<5μm p-type [...]
Single-emitter LD Chip 808nm @10W PAM200914-LD-CHIP-808nm Brand: PAM-XIAMEN Wavelength: 808nm Stripe width: 190um Output Power: 10W Cavity Length:4mm Operation Symbol Min. Typ. Max. Unit Center wavelength λ — 808 — nm Output powe P。 — 10.5 — w Operation mode — — CW — — Geometrical Emitter width w — 190 — μm Cavity length L — 4000 — μm Chip width W — 500 — μm Chip height H — 150 — μm Electro Optical Data Threshold curen Ith — 1.6 — A Operating current Iop — 10 — A Operating voltage Vop — 1.8 — V Slope efficiency ηd=PJ(lop-Ith) — 1.2 — WIA Total conversion efficiency η=Po/(lopxVop) — 58 — % Slow axis divergence θn” — 10 — degrees Fast axis divergence θ1 — 35 — degrees Spectral width △λ — 3 — nm Polarization — — TE — — For more information, please contact us email [...]
