8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
For more information, send us email at [email protected] and [email protected]
Highlights •GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays. •Transmission electron microscopy images revealed arrays of 90° misfit dislocations. •Threading dislocation densities of around View the MathML source were found in each case. •Lower dark currents and higher quantum efficiency was found [...]
PAM XIAMEN offers MgO single crystal substrate. MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] 2″ 280 P/E/P 1-20 SEMI Prime p-type Si:B [111-1.5°] 2″ 400 P/E 1-10 SEMI Prime p-type Si:B [111] 2″ 500 P/E 1-10 SEMI Prime, p-type Si:B [111-10° towards[112]] 2″ 280 P/E 0.5-0.6 SEMI Prime p-type Si:B [111-3°] 2″ 300 P/P 0.016-0.018 SEMI Prime p-type Si:B [111-3.5°] 2″ 280 P/P 0.01-0.02 SEMI Prime p-type Si:B [111] 2″ 600 P/E 0.01-0.05 SEMI Prime p-type Si:B [111-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] 2″ 1000 P/P ~4 NO Flats n-type Si:P [110] 2″ 950 P/P 2.5-3.5 1 F @ <1,-1,0> n-type Si:P [110] 2″ 450 P/P ~0.6 1 F @ <001> n-type Si:P [110] 2″ 1000 P/P 0.5-1.0 PF<111> SF 109.5° n-type Si:P [100] 2″ 500 P/P 800-1,500 SEMI Prime, n-type Si:P [100] 2″ 300 P/E >50 SEMI Prime, n-type Si:P [100] 2″ 5000 P/E 42-53 SEMI Prime, , Individual cst n-type [...]
We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more [...]
PAM XIAMEN offers GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES. Nd:GGG (neodymium doped gadolinium gallium garnet) Chemical formula: Nd:Gd3Ga5O12 Nd:GGG single crystal has excellent properties, such as high mechanical strength, chemical stability, thermal conductivity and thermal capacity, wide absorption bands at around 808 nm and long [...]
PAM XIAMEN offers SiO2 +Si3N4 on Silicon wafer as follows No.1: 300 nm SiO2+50nm Si3N4 Films on Si (100), 2″ dia x 0.250 mm t, P type , B-doped,Resistivity:0.01-0.1ohm.cm Thermal oxide Layer Research Grade , about 80 % useful area SiO2(300nm)+50nm Si3N4 layer on 2″ Silicon wafer( Both [...]
