8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
For more information, send us email at [email protected] and [email protected]
Highlights •Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si – multi-junction solar cells. •Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS. •The projected widths of the interface layers [...]
PAM XIAMEN offers 3″FZ Prime Silicon Wafer Thickness: 350±15um. 3″ Si epi-ready wafer Si wafer FZ Diameter: 76mm Thickness: 350±15um Dopant: P Orientation: (100) Resistivity: 500-1000 Ohm*cm Double side polished, epi-ready laser mark with numbering from N1k- 001 to NN1k- 200 for alll 200pcs [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 2″ 250 P/P 0.01-0.02 SEMI Prime, TTV<5μm p-type Si:B [100] 2″ 300 P/E 0.01-0.02 SEMI, p-type Si:B [100] 2″ 500 P/P 0.01-0.02 SEMI Prime, p-type Si:B [100] 2″ 600 P/E 0.01-0.05 SEMI Prime, p-type Si:B [100] 2″ 525 P/E 0.005-0.020 SEMI Prime, , TTV<5μm p-type Si:B [100] 2″ 300 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ P/E SEMI Prime p-type Si:B [100] 2″ 525 P/P <0.01 {0.0076-0.0078} SEMI Prime, , in hard cassettes of 5 wafers. p-type Si:B [111] ±0.5° 2″ 275 P/E 1-30 SEMI Prime p-type Si:B [111] ±0.5° 2″ 330 P/E 1-20 SEMI Prime p-type Si:B [111] ±0.5° 2″ 330 P/E 1-20 SEMI Prime p-type [...]
PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers. 1. Specification of 440-460nm Blue GaN LD wafer (PAM-190909-GAN-LD) Item Descriptions Materials Substrate blue laser 440-460nm InGaN 2 inch Sapphire substrate*** GaN Blue LD EPI Wafer Spec Spec LD Epitaxial Wafer Size Growth MOCVD Diameter 50.8 ± 0.2 [...]
Abstract Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -6 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° 10,000Ωcm>Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
