PAM XIAMEN offers 8″CZ Prime Silicon Wafer
8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 2″ FZ Prime Silicon Wafer. Si wafer Dia 2” x 260μm FZ (111) Type n doped P R > 300 ohm.cm 2 side spolished With flats For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-3 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° 10,000Ωcm>Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Side view microphotograph of an electrode slice, depicting the structure of a nanowall/silicon/nanowall. Credit: Victor Krivchenko Members of the D. V. Skobeltsyn Institute of Nuclear Physic and colleagues from the Faculty of Chemistry of the Lomonosov Moscow State University have developed a new silicon- and [...]
Red Infrared AlGaAs /GaAs LED Epi-Wafer PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs /GaAs LED epi-wafer with wavelength 850-880 nm and 890-910nm: Structure of infrared AlGaAs /GaAs LED epi-wafer: PAM-190723-LED Structure Thickness, um Type Composition CC, cm-3 Wide-gap window 1 р AlхGa1-хAs (х=0,25-0,3) (2-5) ∙1018 Barrier layer 0.06 р AlхGa1-хAs (х=0,25-0,3) (0.8-1) ∙1018 Active layer – GaAs undoped – Al0,2Ga0,8As Barrier layer 0.06 n AlхGa1-хAs (х=0,25-0,3) (0.5-1) ∙1017 Wide-gap window 6 n AlхGa1-хAs (1-2)∙1018 (х=0,3-0,35) Stop layer 0.1 – AlхGa1-хAs – (х=0,9-1) Buffer [...]
Highlights •GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays. •Transmission electron microscopy images revealed arrays of 90° misfit dislocations. •Threading dislocation densities of around View the MathML source were found in each case. •Lower dark currents and higher quantum efficiency was found [...]
PAM XIAMEN offers4″ Silicon EPI Wafer-6 4″ Si epi wafer Structure： (Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate) Top layer intrinsic Si: Resistivity≥50Ωcm, Thickness 5μm, Residual carrier concentration<1×1014/cm3 Middle layer Phosphorus Doped： Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3), Thickness 20μm, Residual carrier concentration<2.1×1013/cm3 Layer with Ion Implantation: handled [...]
