In the present work, dislocation arrays are investigated in float zone (FZ) grown silicon wafers by the light beam induced current (LBIC) mapping technique at different wavelengths and by deep level transient spectroscopy (DLTS). The LBIC technique appears to be able to recognize and [...]
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on [...]
2013-05-02meta-author
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.
Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide.
2 inches in diameter
The silicon substrate
orientation<100>
resistivity>10Ωcm
The insulating thermal oxidation film thickness 300nm
Polishing: one-sided for microelectronics [...]
2019-07-02meta-author
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm.
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: [...]
2019-07-03meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111] ±0.5°
1″
50 ±10
P/P
1-100
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 4 wafers
n-type Si:P
[100]
1″
280
P/P
1-20
SEMI Prime
n-type Si:P
[100]
1″
280
P/E
1-5
SEMI
n-type Si:P
[100]
1″
1500
P/E
1-20
Prime,
n-type Si:P
[100]
1″
525
P/E
0.05-0.15
SEMI
n-type Si:P
[111]
1″
330
P/E
FZ >90
Prime
p-type Si:B
[100]
1″
775
P/E
8-12
SEMI Prime
p-type Si:B
[100]
24mm
300
P/E
1-100
Prime,
p-type Si:B
[100]
1″
300
P/E
1-10
Prime,
p-type Si:B
[100]
1″
500
P/E
1-10
p-type Si:B
[100]
1″
380
P/E
0.003-0.005
SEMI Prime
p-type Si:B
[100]
1″
275
P/E
0.002-0.005
Prime
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays [...]
2019-03-08meta-author
PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author