905nm laser diode wafers

PAM XIAMEN offers 905nm laser diode wafers.

Single stark 905nm pulse LD structures
P+ GaAs P=0.5-2×1020, d~0.15μm
P- AlGaAs cladding, d~1.0μm
Undoped AlGaAs waveguide d~0.4μm
Undoped GaInAs QW d~8nm, PL:890-900nm
Undoped AlGaAs waveguide d~0.7μm
N- AlGaAs cladding, d~1.2μm
N GaAs, d~0.5μm
2” or 3” N GaAs substrate N=(0.6~4)×1018 d=350~625μm 15°off <111>A

Two stark 905nm pulse LD structures
P+ GaAs P=0.5-2×1020, d~0.15μm
P- AlGaAs cladding, d~1.0μm
Undoped AlGaAs waveguide d~0.4μm
Undoped GaInAs QW d~8nm, PL:890-900nm
Undoped AlGaAs waveguide d~0.7μm
N- AlGaAs cladding, d~1.2μm
N++GaAs/P++GaAs Tunnel junction
P- AlGaAs cladding, d~1.0μm
Undoped AlGaAs waveguide d~0.4μm
Undoped GaInAs QW d~8nm, PL:890-900nm
Undoped AlGaAs waveguide d~0.7μm
N- AlGaAs cladding, d~1.2μm
N GaAs, d~0.5μm
2” or 3” N GaAs substrate N=(0.6~4)×1018 d=350~625μm 15°off <111>A

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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