940nm VCSEL Array with 3 Emitters for Sensing in Consumer Electronics
940nm VCSEL array chip with 3 emitters can be offered for proximity light sensing applications in consumer electronics. More about the electro-optical, mechanical characteristics, performance of 940nm VCSEL array with 3 emitters please refer to the following part:
1. VCSEL Chip Product Description & Features
Item No. PAM940V003K
· 940nm VCSEL Array
· 24.5mW @ 25mA
Number of emitters: 3
2. Mechanical Characteristics of 940nm VCSEL Array Chip with 3 Emitters
| Number of emitters | 3 |
| Chip width | 165±10um |
| Chip length | 165±10um |
| Chip height | 100±10um |
| Aperture | 11±2um |
3. Electro-Optical Characteristicsof 940nm VCSEL Array with 3 Emitters
| Parameters | Symbol | Min | Typical | Max | Units | Test Condition |
| Threshold current | Ith | – | 4 | – | mA | @25mA, 25℃, CW mode |
| Operating voltage | Vf | 1.8 | 1.95 | 2.20 | V | |
| Wavelength | λpeak | 930 | 940 | 950 | nm | |
| Output optical power | P | 24 | 24.5 | 25 | mW | |
| Slope efficiency | ηs | – | 1.1 | – | W/A | |
| Power conversion efficiency | PCE | 42 | 46 | – | % | |
| Beam full divergence (D86) | φ | 25 | ||||
| Wavelength Temp. coefficient | dλ/dT | 0.07 | nm/℃ |
4. Typical Performance Curves of 940nm VCSEL Chip with 3 Emitters @25mA
5. Absolute Maximum Ratings of 940nm VCSEL Array with 3 Emitters
| Parameters | Conditions |
| Forward DC current | ≤30mA |
| Storage temperature | -40 to 85℃ |
| Packaging temperature | ≤260℃(<10S) |
| Junction temperature | ≤120℃ |
6. About VCSEL Spectral Characteristics
The spectrum of VCSEL depends on the gain medium of the VCSEL quantum well and the design of the VCSEL DBR. The top and bottom DBRs create a high Q Fabry Perot resonator, resulting in discrete longitudinal modes. In most cases, the close proximity between DBRs only produces one longitudinal mode and helps define the peak wavelength of VCSEL. The single longitudinal mode is also the main reason for the stability of the mode within the temperature range. As the vertical mode shapes the VCSEL spectrum, the thermal expansion and refractive index of the DBR layer change with temperature to the allowed red mode. Therefore, increasing the forward current or junction temperature of VCSEL will increase the peak wavelength of VCSEL.
The VCSEL power array consists of multiple holes on a single chip, which work in parallel. When the chip is turned on, all individual holes on the chip operate as independent laser sources. In addition, due to the growth changes along the surface of the chip, the longitudinal patterns of each aperture will be slightly different. Therefore, each aperture will generate light power with slightly different wavelengths and phases. The measurement spectrum of VCSEL power array will present a spectrum with multiple overlapping peaks, indicating that due to the collection of many apertures operating at slightly different working wavelengths, it roughly follows a Gaussian distribution
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