Search Results - sic

4H-SiC PVT Growth: Achieving Crystal Structure Growth Stability

PAM-XIAMEN can supply you with 4H-SiC wafers fitting your demands, specifications as found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. The control of a single crystal form during the growth process of SiC crystals is a complex problem, involving the selection of multiple growth parameters and the optimization of temperature field structure, and the parameters are [...]

Reducing Surface Pits of 4H-SiC Epiwafer

PAM-XIAMEN can supply SiC epitaxial wafers, more wafer specifications please read: https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html. Although SiC epitaxial wafers exhibit excellent characteristics in high-voltage and high current devices, there are still several types of defects that have a negative impact on the electrical performance of SiC devices. Among them, surface pits have an impact [...]

4H-SiC Subsurface Damage

Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. The 4H-SiC substrate is the [...]

Influence of Seed Crystal on SiC Crystal Growth

PAM-XIAMEN can supply SiC seed crystal for single crystal growth, specific parameters can be found in: https://www.powerwaywafer.com/sic-seed-crystal.html Seed crystals have a significant influence on the initial nucleation of crystals. The surface morphology of the crystal nucleation stage can to some extent reflect the rich information of crystal growth mechanism and crystal defect distribution, and [...]

2022-2028 YOLE Silicon Carbide (SiC) Power Semiconductor Market Report

With the driving force of Automotive and Industrial electronics, the strong growth of the silicon carbide (SiC) power semiconductor market is expected to approach $10 billion in the coming years. At the same time, many industry participants have announced corresponding expansion plans to quickly seize market share. The cooperation and integration [...]

How Defect Density Impacts Mechanics of 4H-SiC Substrate?

PAM-XIAMEN can supply SiC substrates with various specifications, please get more info from: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html 1. Significance of Research on Correlation Between Defect Rate and Mechanical Strength It is well known that SiC defects have great negative impact to the electrical reliability and performance of chips; Their impact on the mechanical yield [...]

Minority Carrier Lifetime for High-Performance 4H-SiC Epi Wafers

The minority carrier lifetime, also known as the average lifetime of non-equilibrium minority carriers, reflects the decay rate of minority carriers in semiconductor materials. It can directly reflect the quality of semiconductor materials and the performance of high-voltage high-power devices. Take the SiC bipolar power devices (eg. IGBT, PIN diode) [...]

Demystifying SiC Wafers: C-Plane vs. Si-Plane Explained

SiC wafers are available for power electronics, scientific or industrial applications, specifications as: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html SiC is a binary compound formed in a 1:1 ratio of Si and C elements, consisting of 50% silicon (Si) and 50% carbon (C). Its basic structural unit is the Si-C tetrahedron. 1. SiC Crystal Structure Arrangement 1.1 [...]

How Epitaxial Pit Defects Affect SiC MOSFET Device Characteristics?

SiC epitaxial wafer is available for fabricating MOSFET devices, wafer specifications can be found in https://www.powerwaywafer.com/sic-mosfet-structure.html 1.  Epitaxial Pits Epitaxial pits, as one of the most common surface morphology defects, have a typical surface morphology and structural profile as shown in Fig.1. The position of thread dislocation (TD) corrosion pits observed [...]

Chemical Mechanical Polishing (CMP) on Carbon(C) Surface of SiC Wafer

SiC wafer materials have broad bandgap, high electron saturation mobility, and excellent thermal properties, which have great application prospects in high-temperature, high-frequency, and high-power devices. The surface quality of Si surface directly affects the quality of SiC epitaxial thin film and the performance of its devices. However, defects on [...]