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A fracture criterion for gallium arsenide wafers

The fracture of single crystal gallium arsenide (GaAs) semi-conducting wafers was studied. Prismatic beam specimens, cut at different crystallographic orientations from thin wafers, were loaded to failure in four-point bending. Fracture in these crystals occurred predominantly on the {110} family of crystallographic planes. The critical normal and shear stresses on the primary {110} failure planes of the specimens at failure were calculated and a plane stress failure envelope was determined. A model to predict the likelihood of failure at any stress state was developed. Scanning electron microscopic analysis revealed that failure in bending was initiated from surface defects that approximate semi-elliptical cracks on the tension side.
Source: Engineering Fracture Mechanics
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