AlInP/GaAs epi wafer

AlInP/GaAs epi wafer

AlxIn1-xP is a ternary semiconductor material grown with X composition in the range of 0.5~0.52, which is lattice matched to GaAs. AlxIn1-xP is commonly used as a window layer in high-bandgap III-V solar cells, where it is responsible for reducing surface recombination by reflecting minority carriers. We can offer 2″ GaAs epi wafer with AlInP layer as follows:

AlInP / GaAs epi wafer

1. Spec of AlInP / GaAs Epi Wafer

No.1 AlInP Thin Film on GaAs Substrate for Laser Application


Structure Thickness
p-AlInP high doping
p-AlInP normal doping
n-AlInP normal doping
n-AlInP high doping
n-GaAs 300nm
GaAs substrate 350um


No.2 2” AlInP epi layer: epi layer: 1-3um,

GaAs substrate: 2”size, orientation (100) or (110), n type or semi-insulating, thickness: 300-500um, single side polished.

2. Differences between GaAs / InAlP and GaAs / GaInP Interfaces

We have studied the GaAs / InAlP and GaAs / GaInP Interfaces by photoelectron spectroscopy. Reliable information on the chemical evolution of the interface is obtained through the combination of depth profiles by Ar+ sputtering and angle-resolved X-ray photoelectron spectroscopy. The GaAs / AlInP interface has a longer extension length than the GaAs / GaInP interface. We found traces of P atoms in a chemical environment different from the usual InAlP coordination on the top of GaAs / InAlP interface, and the mixed phases at the interface, such as InAlP, GaInAsP and AlGaInAsP.

Comparison between AlInP Refractive Index and GaInP Refractive Index after Ellipsometry Analysis

3. Phase Saparation of InAlP on Growth Surface

At low temperature (< 700 ° C), the epitaxy of InAlP on GaAs results in compositional modulation with a slightly Al and In rich domain in the length range of 10-100 nm. In the studied temperature range, the phase separation is the largest when the temperature at 600 ° C. Meanwhile, the difference of Al / In ratio between phase neighbors is 4 at. %. The amplitude of phase separation reduces with the growth temperature, as well as the growth temperature affects the length scale increase. The phase separation is coherent without dislocation observed in the InAlP film. It is found that phase separation reduces the peak emission energy and enlarges the emission spectrum.

4. Applications of AlxIn1-xP Material

The ternary semiconductor InAlP is widely used in various optoelectronic applications. AlInP band gap is the widest bandgap III-V material that matches with GaAs. Therefore, InAlP is used for fabricating multi-junction solar cells, visible AlInP lasers, laser diode and multi-quantum barrier lasers. In addition, it can be for 480nm APD and photodiode with narrow band and high sensitivity.

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