PAM XIAMEN offers Silicon Ingots.
Material Description
FZ NTD 3″Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI
FZ 8″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm)
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs,
FZ 6″Ø ingot p-type [...]
2019-03-08meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Role of Si in the Surface Damage Mechanism of RB-SiC/Si Under Mechanical Loading
Published by:
Quanli Zhang ; Zhen Zhang ; Honghua [...]
2019-12-02meta-author
PAM XIAMEN offers Glass Substrates(ITO Coated Glass / Plastic Substrates and ITO/ZnO coated Sodalime Glass).
ITO Coated Glass / Plastic Substrates
ITO coated(sodalime) glass has highly electrical conductivity yet with excellent transparence. It has been widely used in flat panel display and solar cells.
[...]
2019-04-18meta-author
PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates.
Main Parameters
Growth Method
orthogonal
Unit cell constant
a=5.43、b=5.50、c=7.71
Melt point(℃)
1600℃
Density
7.57g/cm3
Dielectric constants
25
Growth method
hanging maneuver method
Size
10×3, 10×5, 10×10, [...]
2019-03-14meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2973
n-type Si:P
[100]
4″
500
P/P
FZ 198-200
SEMI Prime, 2Flats, Empak cst
PAM2974
n-type Si:P
[100-6°] ±0.5°
4″
325
P/P
FZ 1-10
SEMI Prime, 2Flats, Empak cst
PAM2975
Intrinsic Si:-
[100]
4″
300
P/P
FZ >20,000
SEMI Prime, 1Flat, [...]
2019-02-22meta-author
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
2014-04-02meta-author