CdZnTe (CZT) Wafer
PAM-XIAMEN offers commercial CdZnTe substrate with high quality and very competitive price. We also can offer CdZnTe crystal with contacts. Regulaly contacts of anodes and cathode are both deposited by Au, but we can use Al to the deposit the contacts as required. And we offer wafer custom size.
CdZnTe or CZT (Cadmium Zinc Telluride) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.
1.CdZnTe Material Products and Service:
It is mainly used in infrared thin-film epitaxy substrate and radiation detection:
1.1 CZTFor HgCdTe Epitaxial Growth, CdZnTe Properties:
|CdZnTe For epitaxial growth, HgCdTe:|
|CZT substrate size||20×20 +/-0.1mm or larger|
|CdZnTe crystal structure||undoped twin-free|
|CZT thickness||1000 +/- 50|
|Zinc Distribution(CdZnTe Composition)||4.5% or custom|
|“y” % wafer to wafer||<4% +/- 1%|
|“y” % within wafer||<4% +/- 0.5%|
|DCRC FWHM||<= 50 arc.sec|
|IR transmission % (2-20)um||>60%|
|Precipitate density||<1E4 cm-2|
|Etch pit density||<=1E5 cm-2|
|Surface, B-face||EPI ready|
|Surface, A-face||Roughly polished|
|Surface roughness||Ra<20A or custom|
|Te precipitate size||<5um|
|Face identification||A face|
1.2. CdZnTe for Radiation Detection:
PAM-XIAMEN offers CdZnTe material:
As cut wafer; wafer size could be custom, for regular wafer size, please see wafer list
Polished wafer; wafer size could be custom
With contacts/ electrodes available;
With PCB board available;
With pixel available;
With BNC available
And now we list some detail application and explanations for your reference:
1.2.1. Cadmium Zinc Telluride for nuclear radiation detection (X, gamma,beta, thermal, neutron,counter & spectrometer):
It is an important national security need to be able to ubiquitously deploy high resolution (preferably room temperature) gamma detectors in the ﬁeld to provide unambiguous identification of special nuclear materials (SNM) as well as other potential threats.
The energy resolution for semiconductor-based gamma detectors is deﬁned as the full width at half maximum (FWHM) of a peak divided by the energy of the peak. The ideal characteristic would be an impulse function. This, however, is not the case in practice and the detected signals can be challenging to resolve and interpret.
And we can offer CdZnTe material with the following properties to meet this application:
* High resolution [email protected] keV<?(please contact with our sales team)
* Good mu-tao value
1.2.2. For CZT sensors:
1.2.3. CdZnTe for CZT gamma cameras:
The CZT based camera features high spatial resolution, high-energy resolution, a reduced dead space on the edge of the field of view, and a compact format. The camera performance was first examined by comparison of small field of view examinations with those from an Elscint SP6HR standard clinical gamma camera. The new camera was found to give equal or improved image quality. The camera was then used for a systematic phantom study of small lesions in a background as would be found in breast cancer imaging. In this study the camera was able to systematically detect smaller, deeper, and fainter lesions. The camera is presently being used in a clinical trial aimed to assess its value in scintimammography where previous limitations of image quality and detector size have restricted the use of the functional imaging techniques. Preliminary results show high sensitivity and specificity with respect to X-ray mammography and surgery.
And we can offer CdZnTe crystal with the following features to meet this application:
* High resolution:
* Low to mid energy isotopes (50keV to 180keV) available, as well as high energy isotopes;
* With/without guard ring
1.2.4. CZT for solar cell:
N type or p type are available.
1.2.5. CdZnTe for gamma spectroscopy and gamma-ray:
And we can offer CZT material with the following features to meet this application:
* Both pixelated and coplanar available
* with Ohmic and Schottky contact available
1.2.6.CdZnTe for electro-optic application -light modulation
2. High Purity Cd0.9Zn0.1Te(CZT) Crystals
PAM190619-CZT Cd0.9Zn0.1Te ingot x 55mm round ingot are available, offering purity certificate to prove pure CdZnTe (purity>= 99.99999%)
There are three growth method: Bridgman, THM, and floating zone. CZT Grown crystals are difficuilt in comparison to Ge and Si(Czochralski), the reason is:
• Te-reach secondary phases (inclusions and precipitates)
• Subgrain boundaries
3. Market of Nuclear Radication
Traditional Nuclear Radiation Spectrometers: Ge – High energy resolution, but cryogenic cooling required; NaI Scintillators – Low energy resolution
Room-Temperature Wide Band-gap Semiconductor Spectrometers: No cooling requirements: High CdZnTe energy resolution; High spatial resolution
4. CdZnTe Material Application
Nuclear Radiation is mainly application:X-ray diffraction, X-ray fluorescence, bone densitometry, CT scanners,flat panel, Cardiology,Molecular breast imaging, surgical probes, and all other activities using nuclear radiations. Generally speaking, CZT material is used in the following field:
4.1 National and Homeland Security
• Nonproliferation of nuclear materials
• Secondary inspection for portals
• Safeguards measurements: custom inspection systems, radiation monitoring for nuclear safeguard
• Forensics and attribution
• Nuclear waste management
4.2 Medical Imaging
• SPECT, PET and CT scanners
• Bone densitometers
• Medical probes
4.3 Basic science
• Gamma-Ray Spectroscopy
• Synchrotron X-ray research
4.4 Industrial imaging
• Bore-hole logging
• X-ray and gamma-ray cameras
• XRF material analyses
4.5.PV thin film solar panel:
For detailed quotes and special requirements please contact our sales office.
We will offer test reports, please see below an example:
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Freestanding GaN substrate
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.
PAM-XIAMEN is manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.
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Float-Zone Mono-Crystalline Silicon
PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
SiC Wafer Substrate
The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4” and 6”, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.
Ge(Germanium) Single Crystals and WafersPAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.