A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of the LT GaAs growth temperature are presented for the multilayer GaAs structures that are used for device fabrication. The markedly non-exponential nature of the measured transients is a consequence of the multilayer structure of the wafers. The carrier lifetime measurements are correlated with available SEU data measured for structures fabricated with LT GaAsbuffers with different growth temperatures

Source:IEEE

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