PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1
6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm
PARAMETER
SPECIFICATION
GENERAL CHARACTERISTICS
1
Growth Method
FZ Gas Dope
2
Crystal Orientation
(100)
3
Conductivity Type
n
4
Dopant
Phosphorus
5
Nominal Edge Exclusion
6 mm
ELECTRICAL CHARACTERISTICS
6
Resistivity
2000 – 7000 Ωcm
7
Life Time
>1500 µsec
CHEMICAL CHARACTERISTICS
8
Oxygen Concentrations
< 2xE16 at/cm3
9
Carbon Concentrations
< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
10
Front Surface Condition
Polished, [...]
2020-04-17meta-author
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PAM-XIAMEN, a epi service supplier, offers service for processing laser wafer epitaxial growth on polished GaAs substrate and epi on bare substrates for power devices. In the PAM-XIAMEN’s wafer epitaxy foundry, GaAs epitaxy wafer with quantum well laser structure can be processed with the [...]
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The results of GaN epitaxial crystal growth on 4° off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy (THVPE) with high-speed wafer rotation and the properties of the obtained material are briefly described in this paper. GaN epitaxial layers were grown [...]
2019-10-18meta-author
PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):
1. Wafer List:
2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single [...]
2019-03-11meta-author