Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q: The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to [...]
Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range? A: We can offer misorientation in low degree, no problem.
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,
Q:In your web site, the picture of the SiC wafer does not look like regular, transparent-light green color SiC wafer. Why is that? A: Good question, the picture in website is Polarized light image.In regular, it is green color or grey color.
Q: What wafer size do you provide with flat sapphire substrate? A:Currently we still can offer 2″ wafer on flat sapphire substrate.
Q: Regarding LED epi wafer,does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A: Sorry, we can not offer fabrication of [...]
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