GaN based LED Epitaxial Wafer

GaN based LED Epitaxial Wafer

PAM-XIAMEN’s GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

  • Description

Product Description

GaN(gallium nitride) based LED Epitaxial Wafer
As LED wafer manufacturer,we offer LED wafer for LED and laser diodes (LD) application. 
GaN on Al2O3-2” epi wafer Specification(LED Epitaxial wafer)

White 445460 nm

Blue  465475 nm                                               

Green 510530 nm                                                 

1. Growth Technique – MOCVD
2.Wafer diameter: 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3)
4.Wafer pattern size: 3X2X1.5μm
5.Wafer structure:

Structure layers

Thickness(μm) 

p-GaN

0.2

p-AlGaN

0.03

InGaN/GaN(active area)

0.2

n-GaN

2.5

u- GaN

3.5

Al2O3 (Substrate)

430

6.Wafer parameters to make chips:

Item

Color

Chip Size

Characteristics

Appearance

 

PAM1023A01

Blue

10mil x 23mil

 

 

Lighting

Vf = 2.8~3.4V

LCD backlight

Po = 18~25mW

Mobile appliances

Wd  = 450~460nm

Consumer electronic

PAM454501

Blue

45mil x 45mil

Vf = 2.8~3.4V

 

General lighting

Po = 250~300mW

LCD backlight

Wd = 450~460nm

Outdoor display

*If you need to know more detail information of Blue LED Chip, please contact with our sales departments

7.Application of LED epitaixal wafer:
Lighting
LCD back light
Mobile appliances
Consumer electronic

PAM-XIAMEN’s GaN-based epitaxial wafers(Epi Wafer) is for ultra high brightness blue and green light emitting diodes (LED)

GaAs(Gallium arsenide)based LED Wafer:

Regarding GaAs LED wafer, they are grown by MOCVD,see below wavelength of GaAs LED wafer:

Red:585nm,615nm,620~630nm
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573
For these detail GaAs LED wafer specs,please visit:GaAs Epi Wafer for LED

*Laser Structure on 2 inch GaN (0001) substrate or sapphire substrate is available.

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