PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm
Silicon ingot, per SEMI, G Ø76mm
FZ n-type Si:P[100]±2.0°
Ro=(1,500-7,000)Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-05-27meta-author
Study on the mechanism of using IR illumination to improve the carrier transport performance of CdZnTe detector
Different wavelength IR light (770–1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (μτ*) [...]
2013-09-27meta-author
Fully spectroscopic x/γ-ray imaging is now possible thanks to advances in the growth of wide-bandgap semiconductors. One of the most promising materials is cadmium zinc telluride (CdZnTe or CZT), which has been demonstrated in homeland security, medical imaging, astrophysics and industrial analysis applications. These [...]
2019-12-30meta-author
Advantech Wireless releases GaN whitepaper
The company’s paper discusses gallium nitride based solid state power amplifiers for satellite communication
Advantech Wireless, a Canadian-based manufacturer of broadcast-quality Satellite, RF Equipment and Microwave Systems has released a new whitepaper titled, “A new generation of Gallium Nitride (GaN) based [...]
2012-08-30meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-6
GE03. NOTE: Wafers must be free of striation marks
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-23meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm
FZ SCRAP material n-type, Ro: 1-1,000 Ohmcm
FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm
6″Ø ingot p-type Si:B[100], Ro: 1-10 Ohmcm, (1 ingot: 21mm)
6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 0.001-0.005 Ohmcm, Ground, (1 ingot: 188mm)
6″Ø ingot p-type Si:B[100], [...]
2019-03-08meta-author