Bookmark and Share
Home > News > GaAs HEMT epi wafer
GaAs HEMT epi wafer

We can offer 4"GaAs HEMT epi wafer, please see below typical structure:
 1) 4" SI substrate GaAs with [100] orientation,
 2) [buffer] superlattice of Al(0.3)Ga(0.7)As/GaAs with thicknesses
 10/3 nm, repeat 170 times,
 3) barrier Al(0.3)Ga(0.7)As 400 nm,
 4) quantum well GaAs 20 nm,
 5) spacer Al(0.3)Ga(0.7)As 15 nm,
 6) delta-doping with Si to create electron density 5-6*10^11 cm^(-2),
 7) barrier Al(0.3)Ga(0.7)As 180 nm,
 8) cap layer GaAs 15nm.
If you need more information about GaAs HEMT epi wafer, please visit our website:, send us email at or