GaAs HEMT epi wafer

We can offer 4″GaAs HEMT epi wafer, please see below typical structure:

1) 4″ SI substrate GaAs with [100] orientation,
2) [buffer] superlattice of Al(0.3)Ga(0.7)As/GaAs with thicknesses
10/3 nm, repeat 170 times,
3) barrier Al(0.3)Ga(0.7)As 400 nm,
4) quantum well GaAs 20 nm,
5) spacer Al(0.3)Ga(0.7)As 15 nm,
6) delta-doping with Si to create electron density 5-6*10^11 cm^(-2),
7) barrier Al(0.3)Ga(0.7)As 180 nm,
8) cap layer GaAs 15nm.

Source: PAM-XIAMEN

If you need more information about GaAs HEMT epi wafer, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.

Share this post