GaAs (Gallium Arsenide) Wafers

GaAs (Gallium Arsenide) Wafers

As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. The GaAs wafer crystal orientation should be (100) and (111). For (100) orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

  • Description

Product Description

(Gallium Arsenide) GaAs Wafer

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and GaAs wafer manufacturing process, established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for GaAs wafer cleaning and packaging. Our GaAs wafers include 2~6 inch ingot/wafers for LED, LD and Microelectronics applications. We are always dedicated to improve the quality of currently GaAs wafer substrates and develop large size substrates. The GaAs wafer size offered is in 2”, 3”, 4” and 6”, and the thickness should be 220-700um. Moreover, the GaAs wafer price from us is competitive.

1. GaAs Wafer Specifications

1.1 (GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications Remarks
Conduction Type SC/n-type SC/p-type with Zn dope Available
Growth Method VGF  
Dopant Silicon Zn available
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut availalbe
Crystal Orientation (100)2°/6°/15° off (110) Other misorientation available
OF EJ or US  
Carrier Concentration (0.4~2.5)E18/cm3  
Resistivity at RT (1.5~9)E-3 Ohm.cm  
Mobility 1500~3000cm2/V.sec  
Etch Pit Density <5000/cm2  
Laser Marking upon request  
Surface Finish P/E or P/P  
Thickness 220~450um  
Epitaxy Ready Yes  
Package Single wafer container or cassette

 

1.2 (GaAs)Gallium Arsenide Wafers for LD Applications

Item Specifications Remarks
Conduction Type SC/n-type  
Growth Method VGF  
Dopant Silicon  
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15°off (110) Other misorientation available
OF EJ or US  
Carrier Concentration (0.4~2.5)E18/cm3  
Resistivity at RT (1.5~9)E-3 Ohm.cm  
Mobility 1500~3000 cm2/V.sec  
Etch Pit Density <500/cm2  
Laser Marking upon request  
Surface Finish P/E or P/P  
Thickness 220~350um  
Epitaxy Ready Yes  
Package Single wafer container or cassette

 

1.3 (GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type Insulating  
Growth Method VGF  
Dopant Undoped  
Wafer Diamter 2, 3 & 4 inch  Ingot available
Crystal Orientation (100)+/- 0.5°  
OF EJ, US or notch  
Carrier Concentration n/a  
Resistivity at RT >1E7 Ohm.cm  
Mobility >5000 cm2/V.sec  
Etch Pit Density <8000 /cm2  
Laser Marking upon request  
Surface Finish P/P  
Thickness 350~675um  
Epitaxy Ready Yes  
Package Single wafer container or cassette

 

1.4 6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type Semi-insulating  –
Grow Method VGF  –
Dopant Undoped  –
Type N  –
Diamater(mm) 150±0.25  –
Orientation (100)0°±3.0°  –
NOTCH Orientation 〔010〕±2°  –
NOTCH Deepth(mm) (1-1.25)mm   89°-95°  –
Carrier Concentration please consult our sales team  –
Resistivity(ohm.cm) >1.0×107 or 0.8-9 x10-3  –
Mobility(cm2/v.s) please consult our sales team  –
Dislocation please consult our sales team  –
Thickness(µm) 675±25  –
Edge Exclusion for Bow and Warp(mm) please consult our sales team  –
Bow(µm) please consult our sales team  –
Warp(µm) ≤20.0  –
TTV(µm) ≤10.0  –
TIR(µm) ≤10.0  –
LFPD(µm) please consult our sales team  –
Polishing P/P  Epi-Ready  –

 

1.5 2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

Item Specifications
Conduction Type Semi-insulating
Grow Method VGF
Dopant Undoped
Type N
Diamater(mm) 150±0.25
Orientation (100)0°±3.0°
NOTCH Orientation 〔010〕±2°
NOTCH Deepth(mm) (1-1.25)mm   89°-95°
Carrier Concentration please consult our sales team
Resistivity(ohm.cm) >1.0×107 or 0.8-9 x10-3
Mobility(cm2/v.s) please consult our sales team
Dislocation please consult our sales team
Thickness(µm) 675±25
Edge Exclusion for Bow and Warp(mm) please consult our sales team
Bow(µm) please consult our sales team
Warp(µm) ≤20.0
TTV(µm) ≤10.0
TIR(µm) ≤10.0
LFPD(µm) please consult our sales team
Polishing P/P  Epi-Ready
 
* We also can provide poly crystal GaAs bar, 99.9999%(6N).

 

2. GaAs Wafer Market & Application

Gallium arsenide is an important semiconductor material. It belongs to group III-V compound semiconductors and the zinc blende crystal lattice structure, with a lattice constant of 5.65×10-10m, a melting point of 1237°C, and a band gap of 1.4 electron volts. Gallium arsenide can be made into semi-insulating high-resistance materials, which can be used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times greater than silicon, SI GaAs substrate has been importantly used in the fabrication of microwave devices and high-speed digital circuits. Semiconductor devices fabricated on gallium arsenide have the advantages of high frequency, high temperature, low temperature performance, low noise, and strong radiation resistance, which make the GaAs substrate market enlarge.

 

3. Test certificate of GaAs wafer can include below analysis if necessary:

1/Surface roughness of Gallium Arsenide including front side and backside(nanometers).

2/Doping concentration of Gallium Arsenide(cm-3)

3/EPD of Gallium Arsenide(cm-2)

4/Mobility of Gallium Arsendie(V.sec)

5/X-ray diffraction analysis (rocking curves) of Gallium Arsenide: Diffraction reflection curve half-width

6/Low-temperature photoluminescence (emission spectra in the range 0.7-1.0 μm) of Gallium Arsenide: The fraction of exciton photoluminescence in the emission spectrum of the near-IR range at a temperature of 4K or 5 K and an optical excitation density of 1 W / cm2

7/Transmission rate or Absorption coefficient: for instant, we can measure absorption coefficient of single crystal undoped GaAs at 1064nm: <0.6423 cm-1, and this corresponds to a transmission minimum of 33.2% for an exactly 6.5mm thick blank at 1064nm.

 

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