GaAs mHEMT epi wafer

GaAs mHEMT epi wafer

We can offer 4″GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below
typical structure:

N+ In0.53Ga0.47As 20nm (n=1×10^19 cm^-3)
N+ InP etch stopper 5nm (n=5×10^18 cm^-3)
i- In0.52Al0.48As Schottky barrier 10nm
Si-delta-doping (n=6×10^12 cm^-2)
i- In0.52Al0.48As spacer 4nm
i-In0.53Ga0.47As channel 15nm
In0.52Al0.48As buffer 300nm
metamorphic buffer 300nm (linearly graded from substrate to
In0.53Ga0.47As)
S.I. GaAs substrate

Source: PAM-XIAMEN

If you need more information about GaAs mHEMT epi wafer, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com orpowerwaymaterial@gmail.com.
2013-11-19

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