4H Semi-insulating SiC
PAM-XIAMEN offers 4H Semi-insulating SiC with vanadium doped and undoped High-purity, semi-insulating, size from 2” to 4”.
The price:
PAM-XIAMEN offers the best price on the market for high quality SiC wafers and SiC crystal substrates. Our price matching policy ensures that you get [...]
2018-08-07meta-author
New graphene fabrication method uses silicon carbide template
Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far.
(PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]
2018-05-17meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAsN wafer and other related products and services announced the new availability of size 2″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We [...]
2017-07-11meta-author
Abstract
The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for [...]
2017-06-14meta-author
Triple-junction solar cells
We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency.Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are [...]
2″ Free Standing Gallium Nitride (GaN) Substrate
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)
2012-03-06meta-author
