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GaAs mHEMT epi wafer

We can offer 4"GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below
typical structure:
N+ In0.53Ga0.47As 20nm (n=1x10^19 cm^-3)
N+ InP etch stopper 5nm (n=5x10^18 cm^-3)
i- In0.52Al0.48As Schottky barrier 10nm
Si-delta-doping (n=6x10^12 cm^-2)
i- In0.52Al0.48As spacer 4nm
i-In0.53Ga0.47As channel 15nm
In0.52Al0.48As buffer 300nm
metamorphic buffer 300nm (linearly graded from substrate to
S.I. GaAs substrate

If you need more information about GaAs mHEMT epi wafer, please visit our website:, send us email at or