GaAs/AlGaAs/GaAs epi wafer

GaAs/AlGaAs/GaAs epi wafer

We can offer 2″ GaAs/AlGaAs/GaAs epi wafer, please see below typical structure:

S.No
Parameters
Specifications
1
GaAs substrate layer thickness
500μm
2
 layer thickness
2μm
3
GaAs top layer thickness
220 nm
4
Mole fraction of Al (x)
0.7
5
Doping level
Intrinsic
Source: PAM-XIAMEN
If you need more information about GaAs/AlGaAs/GaAs epi wafer, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.comor powerwaymaterial@gmail.com.

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