An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample [...]
PAM XIAMEN offers Undoped Silicon Wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Dopant
Ori
Res (Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM3189
25.4mm
Undoped
<111>
>2000
280um
SSP
Test
Intrinsic FZ
PAM3190
25.4mm
Undoped
<100>
>5000
73.5um
DSP
Prime
FZ, Float Zone
PAM3191
50.8mm
Undoped
<100>
>10000
280um
DSP
Prime
FZ, Intrinsic item
PAM3192
50.8mm
Undoped
<100>
>10000
500um
SSP
Test
Float Zone, Undoped
PAM3193
76.2mm
Undoped
<100>
>5000 Ohm-cm
350um
DSP
MECH
NON-REFUNDABLE, POOR QUALITY. Sold “As-Is”; wafers are covered in streaks, residue, and particles.
PAM3194
100mm
Undoped
<100>
>20,000
500um
SSP
Prime
Intrinsic, Secondary flat SEMI, TTV<10 [...]
2019-02-14meta-author
Near-band-edge luminescence in heavily doped gallium arsenide
The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. [...]
2018-08-28meta-author
Rectifier is a controllable rectifier device based on controllable silicon (thyristor) and centered on intelligent digital control circuits, which converts AC to DC. It is abbreviated as silicon rectifier, also known as thyristor rectifier, thyristor rectifier, etc. Silicon rectifier advantages include high efficiency, no mechanical noise and wear, [...]
2023-10-10meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation
Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans [...]