GaN substrate

What we provide:

Itemundoped N-Si doped N+Semi-insulatingP+
Freestanding GaN substrateyesyesyes
GaN on sapphireyesyesyesyes
InGaN on sapphireyes***
AlN on sapphireyes
LED wafer(p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire)

Freestanding GaN substrate/GaN on sapphire/LED wafer:

 

For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer:

http://www.qualitymaterial.net/products_7.html

 

InGaN on Sapphire:

 

For specification of InGaN on sapphire template, pleas view InGaN substrate:

https://www.powerwaywafer.com/InGaN-Substrates.html

 

AlN on Sapphire:

 

For specification of AlN on sapphire template, pleas view AlN substrate:

http://www.qualitymaterial.net/AlN-Substrate.html

 

AlGaN/GaN on Sapphire

 

For AlGaN/GaN on sapphire template, please view AlGaN/GaN:

https://www.powerwaywafer.com/GaN-HEMT-epitaxial-wafer.html

Lattice constant of GaN substrate

Lattice parameters of gallium nitride were measured using high‐resolution x‐ray diffraction

GaN,Wurtzite sructure. The lattice constants a vs. temperature.

GaN,Wurtzite sructure. The lattice constants c vs. temperature

Properties of GaN substrate

PROPERTY / MATERIALCubic (Beta) GaNHexagonal (Alpha) GaN
...
StructureZinc BlendeWurzite
Space GroupF bar4 3mC46v ( = P63mc)
StabilityMeta-stableStable
Lattice Parameter(s) at 300K0.450 nma0 = 0.3189 nm
c0 = 0.5185 nm
Density at 300K6.10 g.cm-36.095 g.cm-3
Elastic Moduli at 300 K. . .. . .
Linear Thermal Expansion Coeff.. . .Along a0: 5.59×10-6 K-1
at 300 KAlong c0: 7.75×10-6 K-1
Calculated Spontaneous PolarisationsNot Applicable– 0.029 C m-2
Bernardini et al 1997
Bernardini & Fiorentini 1999
Calculated Piezo-electric CoefficientsNot Applicablee33 = + 0.73 C m-2
e31 = – 0.49 C m-2
Bernardini et al 1997
Bernardini & Fiorentini 1999
A1(TO): 66.1 meV
E1(TO): 69.6 meV
Phonon EnergiesTO: 68.9 meVE2: 70.7 meV
LO: 91.8 meVA1(LO): 91.2 meV
E1(LO): 92.1 meV
Debye Temperature600K (estimated)
Slack, 1973
. . .Units: Wcm-1K-1
1.3,
Tansley et al 1997b
2.2±0.2
for thick, free-standing GaN
Vaudo et al, 2000
2.1 (0.5)
for LEO material
where few (many) dislocations
Thermal ConductivityFlorescu et al, 2000, 2001
near 300K
circa 1.7 to 1.0
for n=1×1017 to 4×1018cm-3
in HVPE material
Florescu, Molnar et al, 2000
2.3 ± 0.1
in Fe-doped HVPE material
of ca. 2 x108 ohm-cm,
& dislocation density ca. 105 cm-2
(effects of T & dislocation density also given).
Mion et al, 2006a, 2006b
Melting Point. . .. . .
Dielectric Constant. . .Along a0: 10.4
at Low/Lowish FrequencyAlong c0: 9.5
Refractive Index2.9 at 3eV2.67 at 3.38eV
Tansley et al 1997bTansley et al 1997b
Nature of Energy Gap EgDirectDirect
Energy Gap Eg at 1237K2.73 eV
Ching-Hua Su et al, 2002
Energy Gap Eg at 293-1237 K3.556 – 9.9×10-4T2 / (T+600) eV
        Ching-Hua Su et al, 2002
Energy Gap Eg at 300 K3.23 eV3.44 eV
Ramirez-Flores et al 1994Monemar 1974
..
3.25 eV3.45 eV
Logothetidis et al 1994Koide et al 1987
.
3.457 eV
Ching-Hua Su et al, 2002
Energy Gap Eg at ca. 0 K3.30 eV3.50 eV
Ramirez-Flores et al1994Dingle et al 1971
Ploog et al 1995Monemar 1974
Intrinsic Carrier Conc. at 300 K. . .. . .
Ionisation Energy of . . . Donor. . . .. . . .
Electron effective mass me* / m0. . .0.22
Moore et al, 2002
Electron Mobility at 300 K. . ..
for n = 1×1017 cm-3:ca. 500 cm2V-1s-1
for n = 1×1018 cm-3:ca. 240 cm2V-1s-1
for n = 1×1019 cm-3:ca. 150 cm2V-1s-1
Rode & Gaskill, 1995
Tansley et al 1997a
Electron Mobility at 77 K. . . .. . . .
for n = . .
Ionisation Energy of Acceptors. . .Mg: 160 meV
Amano et al 1990
Mg: 171 meV
Zolper et al 1995
Ca: 169 meV
Zolper et al 1996
Hole Hall Mobility at 300 K. . .. . . .
for p= . . .
Hole Hall Mobility at 77 K. . . .. . .
for p= . . .
.Cubic (Beta) GaNHexagonal (Alpha) GaN

Application of GaN substrate

Gallium nitride (GaN), with a direct band gap of 3.4 eV, is a promising material in the development of short-wavelength light emitting devices. Other optical device applications for GaN include semiconductor lasers and optical detectors.

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